Comset BDW83B Npn silicon darlingtons power transistor Datasheet

NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
NPN SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec
TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
IB = 0
VCBO
Collector- Emitter Voltage
IE = 0
VEBO
IC
IB
Emitter-Base Voltage
Collector Current
Base Current
IC = 0
Pt
Total Power Dissipation
TJ
TStg
Junction Temperature
Storage Temperature
Value
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
25°C case temperatur
25°C free aire temperatur
Unit
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
-65 to +150
-65 to +150
°C
°C
Value
Unit
V
V
V
A
A
W
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Junction to Case Thermal Resistance
0.83
RthJA
Junction to Free Air Thermal Resistance
35.7
23/10/2012
COMSET SEMICONDUCTORS
°C/W
1|3
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter Sustaining
Voltage (*)
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VCE(SAT)
VBE(on)
VEC
Collector-Emitter saturation
Voltage (1)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
ton
Turn-on time
toff
Turn-off time
Test Condition(s)
Min
Typ
Max
Unit
BDW83
BDW83A
IC=30 mA
BDW83B
IB=0
BDW83C
BDW83D
BDW83
IB=0, VCE=30 V
IB=0, VCE=30 V
BDW83A
IB=0, VCE=40 V
BDW83B
IB=0, VCE=50 V
BDW83C
IB=0, VCE=60 V
BDW83D
IE= 0, VCB=45 V
BDW83
IE= 0, VCB=60 V
BDW83A
IE= 0, VCB=80 V
BDW83B
IE= 0, VCB=100 V BDW83C
IE= 0, VCB=120 V BDW83D
IE= 0, VCB=45 V
BDW83
Tcase = 150°C
IE= 0, VCB=60 V
BDW83A
Tcase = 150°C
IE= 0, VCB=80 V
BDW83B
Tcase = 150°C
IE= 0, VCB=100 V
BDW83C
Tcase = 150°C
IE= 0, VCB=120 V
BDW83D
Tcase = 150°C
VEB=5.0 V, IC=0
IC=6 A , VCE=3.0 V
IC=15 A , VCE=3.0 V
IC=6 A , IB=12 mA
IC=15 A , IB=150 mA
IC=6 A , IB=3 A
45
60
80
100
120
-
-
V
-
-
1
mA
-
-
0.5
mA
-
-
5
750
100
-
-
2
20 K
2.5
4
2.5
mA
IE = 15 A , IE= 0
-
-
3.5
V
IC = 10 A,
IB1 =-IB2=40 mA
RL=3Ω; VBE(off) = -4.2V
Duty Cycle≤2%
-
0.9
-
-
7
-
COMSET SEMICONDUCTORS
V
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
23/10/2012
-
2|3
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
Pin 1 :
Pin 2 :
Pin 3 :
15.20
1.90
4.60
3.10
0.35
5.35
20.00
19.60
0.95
4.80
Max.
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
Base
Collector
Emitter
The centre pin is in electrical
contact with the mounting tab.
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
23/10/2012
[email protected]
COMSET SEMICONDUCTORS
3|3
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