Comchip CURA102-G Smd ultra fast recovery rectifier Datasheet

SMD Ultra Fast Recovery Rectifiers
CURA101-G Thru. CURA107-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Ultra fast recovery time: 50~75nS.
-Low leakage current.
Mechanical data
0.209(5.31)
0.185(4.70)
-Case: JEDEC DO-214AC, molded plastic.
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Symbol
CURA
101-G
CURA
102-G
CURA
103-G
CURA
104-G
CURA
105-G
CURA
106-G
CURA
107-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Max. DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Max. RMS voltage
VRMS
35
70
140
280
420
560
700
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
30
A
IO
1.0
A
Parameter
Max. average forward current
Max. instantaneous forward
1.0A
voltage at
Trr
Reverse recovery time
Max. DC reverse current at TA=25
rated DC blocking voltage TA=100
VF
O
C
C
O
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
1.3
1.0
50
1.7
V
75
nS
IR
5.0
100
RθJL
42
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead.
REV:A
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QW-BU001
Comchip Technology CO., LTD.
SMD Ultra Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CURA101-G thru CURA107-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
1000
1
07
RA
-G
10
4-
G
1 -G
RA
10
G~
1
5RA
10
1
CU
10
CU
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
10
CU
O
TJ=125 C
100
~1
03
-G
100
0.1
TJ=25 OC
TJ=25 OC
Pulse width 300μS
4% duty cycle
0.1
0.01
0
20
40
60
80
100
120
0.4
140
0.8
1.2
2.0
1.6
2.4
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
140
30
O
J u n c ti o n C apacian
t ce(p F )
120
Peak F or ward Surge C ur re nt A
( )
TJ=25 OC
f=1MHz and applied
4VDC reverse voltage
100
80
60
40
20
TJ=25 C
8.3ms single half sine
wave, JEDEC method
24
18
12
6
0
0
0.01
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
1.4
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
1.2
1.0
0.8
0.6
Single phase
Half wave 60Hz
0.4
0.2
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
REV:A
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QW-BU001
Comchip Technology CO., LTD.
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