Dynex DSF20545SF Fast recovery diode Datasheet

DSF20545SF
DSF20545SF
Fast Recovery Diode
Advance Information
DS4152- JXO\ 20 (LN31790)
KEY PARAMETERS
VRRM
4500V
IF(AV)
1256A
IFSM
16000A
Qr
1250µC
trr
7.0µs
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Inverters And Choppers
■ Welding
■ High Frequency Rectification
■ UPS
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF20545SF45
4500
DSF20545SF44
4400
DSF20545SF43
4300
DSF20545SF42
4200
DSF20545SF41
4100
DSF20545SF40
4000
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: CB450.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
1256
A
IF(RMS)
RMS value
Tcase = 65oC
1971
A
Continuous (direct) forward current
Tcase = 65oC
1765
A
995
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
IF(RMS)
RMS value
Tcase = 65oC
1552
A
Continuous (direct) forward current
Tcase = 65oC
1335
A
IF
1/8
DSF20545SF
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Max.
Units
16
kA
1280 x 103
A2s
12.8
kA
819.2 X 103
A2s
-
kA
-
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.022
o
Anode dc
-
0.032
o
Cathode dc
-
0.032
o
Double side
-
0.004
o
Single side
-
0.008
o
-
150
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 15kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
150
o
Clamping force
17.5
21.5
kN
Typ.
Max.
Units
-
On-state (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 1800A peak, Tcase = 25oC
-
2.1
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
-
7.0
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
1250
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
400
A
K
Soft factor
1.8
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.36
V
rT
Slope resistance
At Tvj = 150oC
-
0.47
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
160
V
VFRM
2/8
Parameter
DSF20545SF
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
CURVES
4000
Measured under pulse conditions
3500
Instantaneous forward current IF - (A)
3000
Tj = 150˚C
2500
2000
Tj = 25˚C
1500
1000
500
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/8
DSF20545SF
500
Instantaneous forward current IF - (A)
Measured under pulse conditions
400
Tj = 150˚C
300
200
Tj = 25˚C
100
0.5
0.75
1.0
1.25
1.5
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
250
Current
waveform
VFR
Voltage
waveform
Transient forward votage VFP - (V)
200
δy
di = δy
dt δx
δx
150
Tj = 125˚C limit
100
Tj = 25˚C limit
50
0
0
500
1000
1500
2000
Rate of rise of forward current dIF/dt - (A/µs)
Fig.3 Transient forward voltage vs rate of rise of forward current
4/8
DSF20545SF
100000
IF
QS = ∫
50µs
Conditions:
0
Tj = 150˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
1000
100
IF = 100A
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.4 Recovered charge
10000
Conditions:
Tj = 150˚C,
Reverse recovery current IRR - (A)
VR = 100V
IF = 2000A
1000
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
100
10
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
5/8
DSF20545SF
Thermal Impedance - Junction to case (˚C/W)
0.1
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1.0
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
6/8
10
DSF20545SF
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode
27.0
25.4
Ø76 max
Ø48 nom
Ø48 nom
Anode
Nominal weight: 500g
Clamping force: 19.6kN ± 10%
Package outline type code: CB450
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
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Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
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DYNEX SEMICONDUCTOR LIMITED
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United Kingdom.
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Technical Documentation – Not for resale.
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