2SK3438 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 10 Pulse (Note 1) IDP 30 JEDEC ― Drain power dissipation (Tc = 25°C) PD 80 W JEITA ― Single pulse avalanche energy (Note 2) EAS 252 mJ TOSHIBA Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A 2-9F1C Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case 4 Symbol Max Unit Rth (ch-c) 1.56 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.41 mH, RG = 25Ω, IAR = 10 A 2 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-01-29 2SK3438 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-off current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.74 1.0 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 15 V, ID = 5 A 2.0 4.5 ⎯ S Input capacitance Ciss ⎯ 1200 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss ⎯ 130 ⎯ ⎯ 13 ⎯ ⎯ 40 ⎯ ⎯ 8 ⎯ toff ⎯ 50 ⎯ Total gate charge (gate-source plus gate-drain) Qg ⎯ 28 ⎯ Gate-source charge Qgs ⎯ 16 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 12 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr Turn-on time VOUT 0V ton RL = 60 Ω 10 Ω Switching time Fall time ID = 5 A 10 V VGS tf VDD ≈ 300 V Duty ≤ 1%, tw = 10 μs Turn-off time VDD ≈ 400 V, VGS = 10 V, ID = 10 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 30 A IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 1600 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 17 ⎯ μC Reverse recovery charge Marking K3438 Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Part No. (or abbreviation code) Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-01-29 2SK3438 ID – VDS ID – VDS Common source Tc = 25°C Pulse test 15 10 7.75 6 4 (A) 7.5 7.25 ID 8 20 7.0 Drain current Drain current ID (A) 10 6.75 6.5 2 VGS = 6.0 V 0 0 4 8 12 Drain-source voltage 16 VDS 16 15 Common source Tc = 25°C Pulse test 8.0 12 7.5 8 7.25 7.0 4 6.5 VGS = 6.0 V 0 0 20 (V) 10 20 (V) VDS Drain-source voltage ID Drain current 4 25 2 100 2 4 Tc = −55°C 6 Gate-source voltage 8 VGS 12 ID = 10 A 8 2.5 0 0 10 5 4 (V) 4 8 (S) Drain-source on resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ Common source VDS = 20 V Pulse test 10 25 Tc = −55°C 100 1 Drain current 10 ID 16 VGS 20 (V) RDS (ON) – ID 100 1 12 Gate-source voltage ⎪Yfs⎪ – ID 0.1 0.1 (V) Common source Tc = 25°C Pulse test 16 6 100 VDS 50 VDS – VGS 8 0 0 40 20 Common source VDS = 20 V Pulse test (A) 10 30 Drain-source voltage ID – VGS 12 10 8.5 10 (A) VGS = 10, 15 V 1 0.1 0.1 100 Common source Tc = 25°C Pulse test 1 Drain current 3 10 ID 100 (A) 2010-01-29 2SK3438 RDS (ON) – Tc IDR – VDS (A) Common source VGS = 10 V Pulse test ID = 10 A 5 IDR 2.5 1.5 1.0 0.5 0 −80 −40 0 40 80 Channel temperature 120 Tc Common source Tc = 25°C Pulse test 10 1 10 0.1 0 160 (°C) 5 3 −0.2 −0.4 Capacitance – VDS Vth (V) Gate threshold voltage VDS −1.2 (V) 100 Coss 10 Common source Crss f = 1 MHz 4 3 2 1 1 10 100 Drain-source Voltage VDS −40 0 40 Channel temperature 1000 PD – Tc (°C) (V) (W) Common source ID = 10 A Tc = 25°C Pulse test 400 VDS 80 Drain-source Voltage 60 40 20 120 Channel temperature Tc 160 Dynamic input/output characteristics 500 80 120 (V) 100 40 80 160 Tc (°C) VDD = 100 V 300 12 200 400 200 8 VGS 100 4 10 20 Total gate charge 4 16 VDS 0 0 200 20 (V) 1 0.1 5 0 −80 Tc = 25°C Common source VDS = 10 V ID = 1 mA Pulse test VGS (pF) Ciss C Capacitance −1 Vth – Tc 1000 0 0 −0.8 6 VGS = 0 V PD −0.6 Drain-source voltage 10000 Drain Power dissipation VGS = 0, −1 V 1 30 Qg Gate-source voltage 2.0 100 Drain reverse current Drain-source on resistance RDS (ON) (Ω) 2.5 0 40 (nC) 2010-01-29 2SK3438 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single pulse 0.01 t T Duty = t/T Rth (ch-c) = 1.56°C/W 0.001 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (s) EAS – Tch Safe operating area 100 Avalanche energy EAS (mJ) 400 ID max (pulsed) * Drain current ID (A) 10 10 100 μs * ID max (continuous) 1 ms * DC operation Tc = 25°C 1 300 200 100 0 25 50 0.1 * 75 100 125 150 Channel temperature (initial) Tch (°C) Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 VDSS max 10 Drain-source voltage 100 15 V 1000 BVDSS IAR −15 V VDS (V) VDD Test circuit RG = 25 Ω VDD = 90 V, L = 4.41 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ − 2 V VDSS DD ⎝ ⎠ 2010-01-29 2SK3438 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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