SIRECT BTA08 Discrete triacs(non-isolated/isolated) Datasheet

BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
G
T2
T1
T2
G
T1
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
Value
Unit
RMS on-state current (full sine wave)
TO-220AB
Tc = 110°C
8
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
84
80
A
36
A²s
I²t Value for fusing
Critical rate of rise of on-state current
_ 100 ns
I G = 2 x I GT , tr <
tp = 10 ms
Peak gate current
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
IGT (1)
VGT
Test Conditions
VD = 12 V
VGD
VD = VDRM
IH (2)
IT = 100 mA
IL
IG = 1.2 IGT
Quadrant
RL = 30 Ω
RL = 3.3 kΩ
Tj = 125°C
BTA/BTB
35
50
mA
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
I - III
VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
BW
I - II - III
MAX.
35
50
mA
MAX.
50
70
mA
60
80
MIN.
400
1000
V/µs
MIN.
4.5
7
A/ms
II
dV/dt (2)
Unit
CW
Tj = 125°C
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
IGT (1)
Quadrant
RL = 30 Ω
VD = 12 V
VD = VDRM
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
RL = 3.3 Ω
Unit
I - II - III
IV
MAX.
50
100
mA
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
50
mA
MAX.
50
VGT
VGD
Value
Tj = 125°C
I - III - IV
II
mA
100
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c =3.5 A/ms
Tj = 125°C
MIN.
400
V/µs
MIN.
10
V/µs
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM (2)
ITM = 11 A
Vto (2)
tp = 380 µs
Value
Unit
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
50
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
1
mA
IRRM
Tj = 125°C
MAX.
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.6
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Type
Package
50 mA
Standard
TO-220AB
Weight
Base
quantity
Packing
mode
2.3 g
250
Bulk
200 V ~~ 1000 V
BTB/BTA08
X
X
OTHER INFORMATION
Part Number
BTB/BTA08
Marking
BTB/BTA08
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
P (W)
10
9
8
7
6
5
4
3
2
1
0
IT (R MS ) (A )
IT (R MS )(A )
0
1
2
3
4
5
6
7
8
F ig. 2-2: R MS on-s tate current vers us ambient
temperature (printed circuit board F R 4, copper
thicknes s : 35µm ),full cycle.
10
9
8
7
6
5
4
3
2
1
0
BTB
B TA
T c (° C )
0
25
50
75
100
125
F ig. 3: R ela tive variation of thermal impedance
vers us puls e duration.
IT (R MS ) (A )
K =[Zth/R th]
3.5
1E +0
3.0
Zth(j-c)
D 2 PA K
(S =1c m 2 )
2.5
1E -1
DPA K
(S =0.5c m 2 )
2.0
Zth(j-a)
1.5
1E -2
1.0
0.5
0.0
Tamb(° C )
0
25
F ig. 4:
values ).
50
O n-s tate
75
100
chara cteris tics
125
(ma ximum
T j=T j max
T j max.
V to = 0.85 V
R d = 50 m
T j=25° C
V T M(V )
1.0
1E -1
1E +0
1E +1
1E +2 5E +2
IT S M (A )
10
1
0.5
1E -2
F ig. 5: S urge peak on-s tate current versus
number of cycles.
IT M (A )
100
tp(s )
1E -3
1E -3
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
90
80
70
60
50
40
30
20
10
0
t=20ms
One cycle
Non repetitive
T j initial=25° C
R epetitive
T c=100° C
Number of cycles
1
10
100
1000
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
F ig.
: 6 Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
IG T,IH,IL [T j] / IG,IH,IL
T
[T j=25°C ]
IT S M (A ),I²t (A ²s )
1000
2.5
T j initial=25°C
2.0
IG T
dI/dt limitation:
50A /µs
IT S M
1.5
100
IH & IL
1.0
I²t
0.5
tp (ms )
10
0.01
0.10
T j(°C )
1.00
10.00
F ig. -2:
8 R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typical
values ). S tandard Types
0.0
-40
0
20
40
60
80
100
120
140
F ig. : 9 R elative varia tion of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
6
2.0
1.8
5
1.6
C
4
B
1.4
3
1.2
1.0
2
0.8
0.6
1
(dV /dt)c (V /µs )
0.4
0.1
1.0
10.0
100.0
F ig. 01: DPAK and D 2PAK T hermal resis tance
junction to ambient vers us copper s urface under
tab (printed circuit board F R 4, copper thicknes s :
35 ∝m).
R th(j-a) (°C /W)
100
90
80
70
60
50
40
30
20
10
0
-20
DPAK
D²PAK
S (c m²)
0
4
8
12
16
20
24
28
32
36
40
0
T j(°C )
0
25
50
75
100
125
BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
IT S M (A ), I² t (A ² s )
1000
2.5
T j initial=25° C
2.0
IG T
dI/dt limitation:
50A /µs
IT S M
1.5
100
IH & IL
1.0
I² t
0.5
tp (ms )
10
0.01
0.10
T j(° C )
1.00
10.00
F ig. 8-1: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ). S nubberles s & L ogic L evel Types
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.2
2.0
TW
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
(dV /dt)c (V /µs )
0.2
0.0
0.1
1.0
10.0
0.0
-40
1.6
100
120
140
C
1.2
1.0
T 810/S W
0.8
0.6
100.0
(dV /dt)c (V /µs )
0.4
0.1
1.0
10.0
100.0
F ig. 10: DPAK and D 2PAK T hermal resis tance
junction to ambient vers us copper s urface under
tab (printed circuit board F R 4, copper thicknes s :
35 ∝m).
R th(j-a) (° C /W)
3
2
T j(° C )
75
80
B
1.4
T 835/C W/B W
4
50
60
1.8
5
25
40
F ig. 8-2: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typical
values ). S tandard Types
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
0
20
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
6
0
0
2.0
F ig. 9: R elative varia tion of critical rate of
decreas e of main current vers us junction
temperature.
1
-20
100
125
100
90
80
70
60
50
40
30
20
10
0
DPAK
D² PAK
S (c m² )
0
4
8
12
16
20
24
28
32
36
40
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