2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • Output power: PO = 630 mW (min) • Gain: GP = 14.9dB (min) • Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gain-source voltage VGSS 10 V ID 1 A PD (Note 1) 3 W Channel temperature Tch 150 °C Storage temperature range Tstg −45~150 °C Drain current Power dissipation JEDEC ― JEITA SC-62 TOSHIBA 2-5K1D Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) Marking Part No. (or abbreviation code) W Lot No. 1 B 2 3 A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1. Gate 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 1 2007-2-19 2SK3475 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 5 µA Gate-source leakage current IGSS VGS = 10 V ⎯ ⎯ 5 µA VDS = 7.2 V, ID = 2 mA 1.9 2.4 2.9 V Threshold voltage Vth VGS = 10 V, ID = 75 mA ⎯ 87 ⎯ mV Forward transconductance Yfs VDS = 7.2 V, IDS = 208 mA ⎯ 260 ⎯ mS Input capacitance Ciss VDS = 7.2 V, VGS = 0 V, f = 1 MHz ⎯ 11 ⎯ pF Output capacitance Coss VDS = 7.2 V, VGS = 0 V, f = 1 MHz ⎯ 12.5 ⎯ pF 630 ⎯ ⎯ mW 45 ⎯ ⎯ % 14.9 ⎯ ⎯ dB 500 ⎯ ⎯ mW Drain-source on-voltage VDS (ON) Output power PO Drain efficiency ηD Power gain GP Low voltage output power POL VDS = 7.2 V, Iidle = 50 mA (VGS = adjust), f = 520 MHz, Pi = 20 mW, VDS = 6.0 V, Iidle = 50 mA (VGS = adjust), f = 520 MHz, Pi = 20 mW, Note 2: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 520 MHz, VDS = 7.2 V, Iidle = 50 mA, Pi = 20 mW) C5 L1 L2 C6 Pi ZG = 50 Ω PO C1 C2 L3 C7 R1 L4 C8 C9 VGS C1: 10 pF C2: 10 pF C3: 9 pF C4: 6 pF C5: 2200 pF C6: 2200 pF C7: 10 µF C8: 10000 pF C9: 10 µF C10: 10000 pF C3 C4 ZL = 50 Ω C10 VDS L1: φ0.8 mm enamel wire, 2.2ID, 1T L2: φ0.8 mm enamel wire, 2.2ID, 1T L3: φ0.8 mm enamel wire, 5.5ID, 4T L4: φ0.8 mm enamel wire, 5.5ID, 8T 2 R1: 1.5 kΩ 2007-2-19 2SK3475 ηD – Pi PO – Pi f = 520 MHz Iidle = 50 mA Tc = 25°C 9.6 V Drain efficiency ηD Output power PO (W) 2.0 100 (%) 2.5 1.5 7.2 V 1.0 VDS = 6.0 V 0.5 0 0 20 40 60 Input power Pi 80 80 VDS = 6.0 V 60 7.2 V 40 9.6 V 20 0 0 100 f = 520 MHz Iidle = 50 mA Tc = 25°C 20 (mW) 40 Input power 100 f = 520 MHz VDS = 7.2 V Tc = 25°C (%) 70 mA 1.0 50 mA Iidle = 30 mA Drain efficiency ηD Output power PO (W) 1.2 Pi 80 100 80 100 80 100 (mW) ηD – Pi PO – Pi 1.4 60 0.8 0.6 0.4 80 f = 520 MHz VDS = 7.2 V Tc = 25°C Iidle = 30 mA 70 mA 60 50 mA 40 20 0.2 0 0 20 40 60 Input power Pi 80 0 0 100 20 (mW) 40 Input power f = 520 MHz VDS = 7.2 V Iidle = 50 mA (%) 1.0 100 −20°C Drain efficiency ηD Output power PO (W) 1.2 60°C 0.8 Pi (mW) ηD – Pi PO – Pi 1.4 60 25°C 0.6 Tc = 100°C 0.4 80 f = 520 MHz VDS = 7.2 V Iidle = 50 mA −20°C Tc = 100°C 60 60°C 25°C 40 20 0.2 0 0 20 40 Input power 60 Pi 80 0 0 100 (mW) 20 40 Input power 60 Pi (mW) Note 3: These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2007-2-19 2SK3475 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2007-2-19