Diotec BC856BW Surface mount si-epitaxial planartransistor Datasheet

BC 856W ... BC 860W
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2±0.1
1±0.1
Type
Code
1
1.25±0.1
3
2.1±0.1
0.3
Power dissipation – Verlustleistung
200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca.
2
PNP
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 856W
BC 857W
BC 860W
BC 858W
BC 859W
Collector-Emitter-voltage
B open
- VCE0
65 V
45 V
30 V
Collector-Base-voltage
E open
- VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
200 mW 1)
Collector current – Kollektorstrom (DC)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Group A
Group B
Group C
2
DC current gain – Kollektor-Basis-Stromverhältnis )
- VCE = 5 V, - IC = 10 :A
hFE
typ. 90
typ. 150
typ. 270
- VCE = 5 V, - IC = 2 mA
hFE
110...220
200...450
420...800
typ. 220
typ. 330
typ. 600
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung hfe
1
Input impedance – Eingangs-Impedanz
hie
1.6...4.5 kS
3.2...8.5 kS
6...15 kS
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 :S
30 < 60 :S
60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
16
01.11.2003
General Purpose Transistors
BC 856W ... BC 860W
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
-VCEsat
–
75 mV
300 mV
- IC = 100 mA, - IB = 5 mA
-VCEsat
–
250 mV
600 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.5 mA
- VBEsat
–
700 mV
–
- IC = 100 mA, - IB = 5 mA
- VBEsat
–
850 mV
–
- VCE = 5 V, - IC = 2 mA
- VBEon
600 mV
650 mV
750 mV
- VCE = 5 V, - IC = 10 mA
- VBEon
–
–
820 mV
IE = 0, - VCB = 30 V
- ICB0
–
–
15 nA
IE = 0, - VCB = 30 V, Tj = 150/C
- ICB0
–
–
4 :A
- IEB0
–
–
100 nA
100 MHz
–
–
–
10 pF
12 pF
BC 856W...
F
BC 858W
–
–
10 dB
BC 859W...
BC860W
–
–
4 dB
Base-Emitter voltage – Basis-Emitter-Spannung 1)
Collector-Base cutoff current – Kollektorreststrom
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
- VCE = 5 V, - IC = 200 :A
RG = 2 kS, f = 30...15 kHz
BC 859W
F
–
–
4 dB
BC 860W
F
–
–
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ
620 K/W 2)
RthA
BC 846W ... BC 850W
BC 856AW = 3A
BC 856BW = 3B
BC 857AW = 3E
BC 857BW = 3F
BC 857CW = 3G
BC 858AW = 3J
BC 858BW = 3K
BC 858CW = 3L
BC 859BW = 4B
BC 859CW = 4C
BC 860BW = 4F
BC 860CW = 4G
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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