TOSHIBA TIM1314

MICROWAVE POWER GaAs FET
TIM1314-30L
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
„ HIGH POWER
„ BROAD BAND INTERNALLY MATCHED FET
P1dB=45.0dBm at 13.75GHz to 14.5GHz
„ HIGH GAIN
„ HERMETICALLY SEALED PACKAGE
G1dB=5.0dB at 13.75GHz to 14.5GHz
„ LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=38.0dBm Single Carrier Level
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
SYMBOL
CONDITIONS
P1dB
Compression Point
Power Gain at 1dB Gain
( Ta= 25°C )
VDS= 10V
G1dB
Compression Point
Drain Current
IDS1
Power Added Efficiency
ηadd
3rd Order Intermodulation
IM3
Distortion
IDSset≅7.0A
f = 13.75 to 14.5GHz
Two-Tone Test
UNIT
MIN.
TYP. MAX.
dBm
44.0
45.0
⎯
dB
4.0
5.0
⎯
A
⎯
10.0
11.0
%
⎯
22
⎯
dBc
-25
⎯
⎯
A
°C
⎯
9.0
10.1
⎯
⎯
100
Po= 38.0dBm
Drain Current
IDS2
(Single Carrier Level)
Channel Temperature Rise
ΔTch
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
SYMBOL
gm
VGSoff
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO
( Ta= 25°C )
CONDITIONS
VDS= 3V
IDS= 9.6A
VDS= 3V
IDS= 290mA
VDS= 3V
VGS= 0V
IGS= -290μA
Rth(c-c) Channel to Case
UNIT
S
MIN.
V
-0.7
-2.0
-4.5
A
⎯
20.0
⎯
V
-5
⎯
⎯
°C/W
⎯
1.0
1.1
⎯
TYP. MAX.
5.5
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. April 2009
TIM1314-30L
ABSOLUTE MAXIMUM RATINGS
( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
20
Total Power Dissipation (Tc= 25 °C)
PT
W
136
Channel Temperature
Tch
°C
175
Storage
Tstg
°C
-65 to +175
PACKAGE OUTLINE (7-AA03A)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2