KSC5305D KSC5305D High Voltage High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread even though corner spirit product • Low base drive requirement Equivalent Circuit C B TO-220 1 1.Base E 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage Value 800 Units V VCEO VEBO Collector Emitter Voltage 400 V Emitter Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2001 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 1.65 Unit °C/W 62.5 Rev. A1, June 2001 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=1mA, IE=0 Min. 800 Typ. - Max. - Units V BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V BVEBO Emitter Cut-off Current IE=1mA, IC=0 12 - - V ICBO Collector Cut-off Current VCB=500V, IE=0 - - 10 µA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE=1V, IC=0.8A VCE=1V,IC=2A 22 8 - - VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A - - 0.4 0.5 V V VBE(sat) Base-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A - - 1.0 1.0 V V Cob Output Capacitance VCB = 10V, f=1MHz - - 75 pF tON Turn ON Time - - 150 ns tSTG Storage Time VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A RL = 150Ω - - 2 µs - - 0.2 µs VCC=15V,VZ=300V IC = 2A,IB1 = 0.4A IB2 = -0.4A, LC=200µH - - 2.25 µs - - 150 ns Diode Forward Voltage IF = 1A IF = 2A - - 1.5 1.6 V V * Reverse recovery time (di/dt = 10A/µs) IF = 0.4A IF = 1A IF = 2A - 800 1.4 1.9 - ns µs µs tF Fall Time tSTG Storage Time tF Fall Time VF trr *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5305D Electrical Characteristics TC=25°C unless otherwise noted KSC5305D Typical Characteristics 100 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA 4 3 o IB = 100mA IB = 50mA 2 VCE = 1V o Ta = 125 C 25 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 1 o -25 C 10 IB = 0 0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 100 VCE = 5V Ta = 125 C hFE, DC CURRENT GAIN o 25 C o -20 C 10 1 0.01 0.1 10 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE o 1 1 10 IC = 10 IB 1 V BE(sat) V CE(sat) 0.1 0.01 0.01 10 0.1 IC[A], COLLECTOR CURRENT 1 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 10 IC = 5IB o VBE[V], SATURATION VOLTAGE VCE(sat)[V], SATURATION VOLTAGE IC = 5IB 25 C 1 o Ta = 125 C 0.1 o -20 C 0.01 0.01 10 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage ©2001 Fairchild Semiconductor Corporation 1 o -20 C o 25 C o Ta = 125 C 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Base-Emitter Saturation Voltage Rev. A1, June 2001 KSC5305D Typical Characteristics (Continued) 10 1000 f = 1MHz VCC = 300V IC = 5IB1 = -2.5IB2 Cob[pF], CAPACITANCE tSTG, tF [µs], TIME tSTG 1 tF 0.1 0.01 0.1 100 10 1 1 10 1 Figure 7. Switching Time Figure 8. Collector Output Capacitance 1.6 VF[V], FORWARD DIODE VOLTAGE 10 1.4 1.2 1.0 0.8 1.0 1.5 1 0.1 0.01 2.0 0.1 If[A], FORWARD CURRENT 1 10 IF[A], FORWARD DIODE CURRENT Figure 9. Reverse Recovery Time Figure 10. Forward Diode Voltage 100 100 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT trr[µs], REVERSE RECOVERY TIME 10 10 1µ s 10µ s DC 1 5ms 1ms 0.1 0.01 80 60 40 20 0 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 11. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 12. Power Derating Rev. A1, June 2001 KSC5305D Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3