TOSHIBA 2SJ360_09

2SJ360
2
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)
2SJ360
High Speed, High current Switching Applications
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.55 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.9 S (typ.)
z Low leakage current
z Enhancement mode
: IDSS = −100 μA (max) (VDS = −60 V)
: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 k Ω)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
−1
A
Pulse (Note 1)
IDP
−4
A
PD
0.5
W
JEDEC
JEITA
Drain current
DC
Drain power dissipation
Drain power dissipation
PD
1.5
W
Channel temperature
(Note 2)
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Symbol
Max
Unit
Rth (ch−a)
250
°C / W
TOSHIBA
⎯
SC-62
2−5K1B
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SJ360
Marking
Z
Part No.
(or abbreviation code)
Note 4: A line to the right of a Lot No. identifies the indication of
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
8
Lot No.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut−off current
IDSS
VDS = −60 V, VGS = 0 V
⎯
⎯
−100
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
⎯
⎯
V
Vth
VDS = −10 V, ID = −1 mA
−0.8
⎯
−2.0
V
VGS = −4 V, ID = −0.5 A
⎯
0.86
1.2
VGS = −10 V, ID = −0.5 A
⎯
0.55
0.73
VDS = −10 V, ID = −0.5 A
0.5
1.0
⎯
⎯
155
⎯
⎯
22
⎯
⎯
75
⎯
⎯
17
⎯
⎯
20
⎯
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Switching time
Fall time
Turn−off time
−10V
ton
tf
toff
Total gate charge (Gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“miller”) charge
Qgd
RL = 60Ω
50Ω
Turn−on time
ID = −0.5A
VOUT
0V
VDD ≒
≈ −30V
≤
Duty ≦1%,
tw = 10μs
VDD ≈ −48 V, VGS = −10 V,
ID = −1 A
Ω
S
pF
ns
⎯
20
⎯
⎯
100
⎯
⎯
6.5
⎯
⎯
4.5
⎯
⎯
2.0
⎯
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
⎯
⎯
⎯
−1
A
Pulse drain reverse current
(Note 1)
IDRP
⎯
⎯
⎯
−4
A
Forward voltage (diode)
VDSF
IDR = −1 A, VGS = 0 V
⎯
⎯
1.8
V
Reverse recovery time
trr
⎯
50
⎯
ns
Reverse recovery charge
Qrr
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / μs
⎯
45
⎯
nC
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ID – VDS
−4
−10
−4.5
−5
−8
−1.6
(A)
−3
Drain current
ID
Drain current
−0.6
−0.4
−0.2
−3.8
−10
−3.5
−6
(A)
−0.8
Common source
Ta = 25°C
Pulse test
ID – VDS
−2.0
ID
−1.0
−5
−6
−8
Common source
Ta = 25°C
Pulse test
−4
−3.5
−1.2
−3.3
−0.8
−3
−2.8
−0.4
VGS = −2.5 V
VGS = −2.5 V
0
0
−0.2
−0.4
−0.6
Drain-source voltage
−0.8
VDS
0
0
−1.0
(V)
−2
−4
Drain-source voltage
ID – VGS
(V)
25
Tc = −55°C
100
−1.2
−0.8
−0.4
−1
−2
−3
Gate-source voltage
−4
VGS
−1.6
−1.2
ID = −2 A
−0.8
−1.5
−1.0
−0.4
0
0
−5
(V)
−0.5
−4
−8
−16
VGS
−20
(V)
RDS (ON) – ID
10
Common source
VDS = −10 V
Pulse test
3
Tc = −55°C
25
100
1
0.5
0.3
−0.1
−12
Gate-source voltage
Drain-source ON resistance
RDS (ON) (Ω)
Forward transfer admittance
⎪Yfs⎪ (S)
5
(V)
Common source
Ta = 25°C
Pulse test
|Yfs| – ID
10
−10
VDS – VGS
Common source
VDS = −10 V
Pulse test
0
0
VDS
−2.0
Drain-source voltage
Drain current
ID (A)
−1.6
−8
VDS
−2.0
−6
5
Common source
Ta = 25°C
Pulse test
3
VGS = −4 V
1
−10
0.5
−0.3
−0.5
−1
−3
−5
0.3
−0.1
−10
Drain current ID (A)
−0.3
−0.5
−1
−3
−5
−10
Drain current ID (A)
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RDS (ON) − Ta
IDR − VDS
−3
ID = −2 A
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) ( Ω)
Common source
2.0 Pulse test
−1.5
1.6
−1.0
1.2
−0.5
ID = −2 A
VGS = −4 V
−1.5
0.8
−1.0
−0.5
0.4
−1
−0.5
Common source
Ta = 25°C
Pulse test
−10
−5
−0.3
−3
−0.1
−0.05
−0.03
−1
0
VGS = −10 V
0
−80
−40
VGS = 1 V
0
40
80
120
−0.01
0
160
0.1
0.3
0.2
Ambient temperature Ta (°C)
Drain-source voltage
0.8
(V)
Common source
VDS = −10 V
ID = −1mA
Pulse test
−4
300
Gate threshold voltage
Vth (V)
(pF)
VDS
0.7
−5
500
Capacitance C
0.6
0.5
Vth − Ta
Capacitance – VDS
1000
Ciss
100
50
30
0.4
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
−0.3
−3
−2
−1
Crss
−1
−3
−10
Drain-source voltage
−30
0
−80
−100
−40
0
40
80
120
160
Ambient temperature Ta (°C)
VDS (V)
PD − Ta
2.0
Drain power dissipation
PD (W)
① 25.4mm×25.4mm×0.8mm
1.5
Mounted on ceramic substrate
② Single
①
1.0
0.5
0
0
②
40
80
120
160
200
Ambient temperature Ta (°C)
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2SJ360
rth − tw
500
Transient thermal impedance
rth (ch-a)
300
Single pulse
Single
15 × 15 × 0.8
100
50
20 × 30 × 0.8
30
Mounted on ceramic substrate
40mm×50mm×0.8mm
10
5
3
1
1m
10 m
100 m
1
Pulse width
10
tw
100
1000
(s)
SAFE OPERATING AREA
−10
−5
ID max (pulsed) *
1 ms *
(A)
−1
Drain current ID
−3
−0.5
−0.3
ID max (continuous)
10 ms *
DC operation
Ta = 25°C
−0.1
−0.05
−0.03 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
−0.01 linearly with increase in
temperature.
−0.005
−0.1
−1
−0.3
−3
Drain-source voltage
VDSS max
−10
−30
−100
VDS (V)
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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