Central BCY79-VII Pnp silicon transistor Datasheet

DATA SHEET
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Current (Peak)
ICM
Base Current (Peak)
IBM
Power Dissipation
PD
Power Dissipation(TC=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJA
Thermal Resistance
BCY78
32
32
-65 to +200
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO
VCB= Rated VCBO
ICBO
VCB= Rated VCBO, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BCY78)
BVCBO
IC=10µA (BCY79)
BVCEO
IC=2.0mA (BCY78)
BVCEO
IC=2.0mA (BCY79)
BVEBO
IE=1.0µA
VCE(SAT)
IC=10mA, IB=250µA
VCE(SAT)
IC=100mA, IB=2.5mA
VBE(SAT)
IC=10mA, IB=250µA
VBE(SAT)
IC=100mA, IB=2.5mA
VBE(ON)
VCE=5.0V, IC=2.0mA
SYMBOL
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=5.0V, IC=10µA
VCE=5.0V, IC=2.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
UNITS
V
V
V
mA
mA
mA
mW
W
5.0
100
200
200
340
1.0
ΘJC
BCY78-VII
BCY79-VII
MIN
MAX
140 TYP
120
220
80
40
BCY79
45
45
BCY78-VIII
BCY79-VIII
MIN
MAX
30
180
310
120
400
45
°C
450
°C/W
150
°C/W
MIN
MAX
15
10
20
32
45
32
45
5.0
0.60
0.70
0.60
BCY78-IX
BCY79-IX
MIN
MAX
40
250
460
160
630
60
0.25
0.80
0.85
1.20
0.75
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
BCY78-X
BCY79-X
MIN
MAX
100
380
630
240
1000
60
(SEE REVERSE SIDE)
R3
BCY78/BCY79
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS Continued
SYMBOL
fT
Cob
Cib
NF
ton
td
tr
toff
ts
tf
ton
td
tr
toff
ts
tf
TEST CONDITIONS
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=200µA, RS=2kΩ, f=1.0kHz, B=200Hz
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
MIN
100
TYP
MAX
7.0
15
10
100
50
50
700
600
100
100
35
65
400
300
100
TO-18 PACKAGE - MECHANICAL OUTLINE
A
B
D
SYMBOL
A (DIA)
B (DIA)
C
D
E
F (DIA)
G (DIA)
H
I
J
C
E
F
LEAD #2
LEAD #1
I
45°
G
H
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.209 0.230
5.31
5.84
0.178 0.195
4.52
4.95
0.030
0.76
0.170 0.210
4.32
5.33
0.500
12.70
0.016 0.019
0.41
0.48
0.100
2.54
0.050
1.27
0.036 0.046
0.91
1.17
0.028 0.048
0.71
1.22
TO-18 (REV: R1)
LEAD #3
J
R1
Lead Code
1. Emitter
2. Base
3. Collector
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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