NXP BLF6G22LS-75 Power ldmos transistor Datasheet

BLF6G22LS-75
Power LDMOS transistor
Rev. 01 — 8 February 2008
Preliminary data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
VDS
PL(AV)
Gp
ηD
IMD3
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
(dBc)
2110 to 2170
28
17
18.7
30.5
−37.5[1]
−41.5[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 690 mA:
u Average output power = 17 W
u Gain = 18.7 dB
u Efficiency = 30.5 %
u IMD3 = −37.5 dBc
u ACPR = −41.5 dBc
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (2000 MHz to 2200 MHz)
n Internally matched for ease of use
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
n RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
Simplified outline
Symbol
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLF6G22LS-75
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
18
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Rth(j-case)
thermal resistance from junction to case
Tcase = 80 °C; PL = 17 W
0.75 K/W
BLF6G22LS-75_1
Preliminary data sheet
Unit
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
2 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 100 mA
1.4
2
2.4
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 690 mA
1.75
2.16
2.75
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
3
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
14.9
18.7
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
300
nA
gfs
forward transconductance
VDS = 10 V; ID = 5 A
-
7.3
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 3.5 A
-
0.14
0.24
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
1.5
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Conditions
Min
Typ
Max
Unit
Gp
Symbol Parameter
power gain
PL(AV) = 17 W
17.6
18.7
-
dB
IRL
input return loss
PL(AV) = 17 W
-
−9.5
−6.5
dB
ηD
drain efficiency
PL(AV) = 17 W
28
30.5
-
%
IMD3
third order intermodulation distortion PL(AV) = 17 W
-
−37.5 −34
dBc
ACPR
adjacent channel power ratio
PL(AV) = 17 W
-
−41.5 −38.5
dBc
7.1 Ruggedness in class-AB operation
The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz.
BLF6G22LS-75_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
3 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
001aah586
20
Gp
(dB)
70
ηD
(%)
Gp
19
55
18
40
ηD
17
25
16
0
20
40
60
80
10
100
PL (W)
VDS = 28 V; IDq = 690 mA; f = 2140 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical
values
001aah567
20
Gp
(dB)
60
ηD
(%)
Gp
IMD3
IMD
(dBc)
45
−30
18
30
−45
17
15
−60
19
ηD
20
IMD5
IMD7
16
0
001aah568
−15
40
60
80
100
0
120
140
PL(PEP) (W)
VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz;
f2 = 2140.1 MHz.
−75
0
40
60
80
100
120
140
PL(PEP) (W)
VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz;
f2 = 2140.1 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-75_1
Preliminary data sheet
20
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
4 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
001aah569
20
001aah570
−25
60
IMD3
ηD
(%)
Gp
(dB)
19
Gp
IMD3,
ACPR
(dBc)
40
−35
20
−45
0
−55
ηD
18
17
0
10
20
30
40
PL(AV) (W)
ACPR
0
VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz;
f2 = 2145 MHz; carrier spacing 10 MHz.
10
20
30
40
PL(AV) (W)
VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz;
f2 = 2145 MHz; carrier spacing 10 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5. 2-carrier W-CDMA adjacent power channel ratio
and third order intermodulation distortion as
functions of average load power; typical values
8. Test information
R1
VGG
C22
VDD
C5
C23
C6
C7
C10 C11 C12 C13
R2
C8
C14
C9
C4
C1
C21
INPUT
C2
C3
C20
OUTPUT
C15 C16 C17 C18 C19
001aah571
The drawing is not to scale.
Fig 6. Test circuit for operation at 800 MHz
BLF6G22LS-75_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
5 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
C22
C23
R1
C5
C10
C6
C7
C8
C9
R2
C11 C13
C12
C14
C4
C1
C20
C3
C21
C2
C17
C19
C16 C18
C15
001aah572
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm. The drawing is not to scale.
See Table 8 for list of components.
Fig 7. Component layout
Table 8.
List of components (see Figure 6 and Figure 7)
Component
Description
Value
Remarks
C1
multilayer ceramic chip capacitor 5.6 pF
[1]
C2, C3
multilayer ceramic chip capacitor 0.5 pF
[1]
C4
multilayer ceramic chip capacitor 0.6 pF
[1]
C5, C6, C13, C14, C18, C19 multilayer ceramic chip capacitor 1.5 µF
C7, C8, C11, C16
TDK 1206 or capacitor of same quality
multilayer ceramic chip capacitor 100 nF
C9
multilayer ceramic chip capacitor 15 pF
C10, C15
multilayer ceramic chip capacitor 220 nF
Murata 0603 or capacitor of same quality
[1]
AVX 0805 or capacitor of same quality
C12, C17
multilayer ceramic chip capacitor 10 pF
[1]
C20
multilayer ceramic chip capacitor 0.7 pF
[1]
C21
multilayer ceramic chip capacitor 20 pF
[1]
C22
tantalum capacitor
10 µF; 35 V
C23
electrolytic capacitor
220 µF; 35 V
R1
SMD resistor
3.3 Ω
R2
SMD resistor
5.1 Ω
[1]
American Technical Ceramics type 100B or capacitor of same quality.
BLF6G22LS-75_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
6 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 8. Package outline SOT502B
BLF6G22LS-75_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
7 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing-Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G22LS-75_1
20080208
Preliminary data sheet
-
-
BLF6G22LS-75_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
8 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BLF6G22LS-75_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 February 2008
9 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 February 2008
Document identifier: BLF6G22LS-75_1
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