TOSHIBA RN2101F

RN2101∼RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101, RN2102, RN2103,
RN2104, RN2105, RN2106
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Built-in bias resistors
z Simplified circuit design
z Fewer parts and simplified manufacturing process
z Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2101
4.7
4.7
RN2102
10
10
RN2103
22
22
RN2104
47
47
RN2105
2.2
47
RN2106
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN2101~2106
RN2101~2104
RN2105, 2106
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101~2106
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
−10
VEBO
−5
V
IC
−100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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RN2101∼RN2106
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Symbol
Test
Circuit
Min
Typ.
Max
VCB = −50 V, IE = 0
―
―
−100
VCE = −50 V, IB = 0
―
―
−500
−0.82
―
−1.52
−0.38
―
−0.71
−0.17
―
−0.33
−0.082
―
−0.15
−0.078
―
−0.145
−0.074
―
−0.138
RN2101
30
―
―
RN2102
50
―
―
70
―
―
80
―
―
RN2105
80
―
―
RN2106
80
―
―
―
−0.1
−0.3
RN2101
−1.1
―
−2.0
RN2102
−1.2
―
−2.4
−1.3
―
−3.0
−1.5
―
−5.0
RN2105
−0.6
―
−1.1
RN2106
−0.7
―
−1.3
VCE = −5 V,
IC = −0.1 mA
−1.0
―
−1.5
−0.5
―
−0.8
RN2101~2106
ICBO
―
ICEO
Test Condition
RN2101
RN2102
Emitter cut-off current
RN2103
RN2104
VEB = −10 V, IC = 0
IEBO
―
RN2105
VEB = −5 V, IC = 0
RN2106
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
RN2103
RN2104
RN2101~2106
RN2103
RN2104
RN2101~2104
RN2105, 2106
hFE
VCE (sat)
VI (ON)
―
―
―
VI (OFF)
―
VCE = −5 V,
IC = −10 mA
IC = −5 mA,
IB = −0.25 mA
VCE = −0.2 V,
IC = −5 mA
Unit
nA
mA
V
V
V
Transition frequency
RN2101~2106
fT
―
VCE = −10 V,
IC = −5 mA
―
200
―
MHz
Collector Output
capacitance
RN2101~2106
Cob
―
VCB = −10 V, IE = 0,
f = 1 MHz
―
3
6
pF
RN2101
3.29
4.7
6.11
RN2102
7
10
13
15.4
22
28.6
RN2104
32.9
47
61.1
RN2105
1.54
2.2
2.86
RN2106
3.29
4.7
6.11
RN2101~2104
0.9
1.0
1.1
Input resistor
Resistor ratio
RN2103
RN2105
R1
R1/R2
―
―
0.0421 0.0468 0.0515
0.09
RN2106
2
kΩ
0.1
0.11
2007-11-01
RN2101∼RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
3
2007-11-01
RN2101∼RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
4
2007-11-01
RN2101∼RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
5
2007-11-01
RN2101∼RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
6
2007-11-01
RN2101∼RN2106
Type Name
Marking
RN2001
RN2102
RN2103
RN2104
RN2105
RN2106
7
2007-11-01
RN2101∼RN2106
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2007-11-01