ATMEL AT26DF041 4-megabit 3.0-volt only or 2.7-volt only serial firmware dataflash-r Datasheet

Features
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Single 3.0V - 3.6V or 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
33 MHz Max Clock Frequency
Byte Program Operation
Page Program Operation
– 2048 Pages (256 Bytes/Page) Main Memory
– Single Cycle Reprogram Capability (Page Erase and Program)
Supports Optional Page and Block (2 KB or 4 KB) Erase Operations
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Hardware Data Protection Feature for the Top 64 KB of Memory
Low Power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
5.0V-tolerant Inputs: SI, SCK, CS, and WP Pins
100,000 Program/Erase Cycles Typical
Data Retention – 20 years
4-megabit
3.0-volt Only or
2.7-volt Only
Serial Firmware
DataFlash®
AT26DF041
1. Description
The AT26DF041 is a 3.0-volt or 2.7-volt only, serial interface Flash memory ideally
suited for a wide variety of program code- and data-storage applications. Its 4,194,304
bits of memory are organized as 2048 pages of 256 bytes each. Unlike conventional
Flash memories that are accessed randomly with multiple address lines and a parallel
interface, the DataFlash® uses an SPI serial interface to sequentially access its data.
The DataFlash supports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and
reduces package size and active pin count. The device is optimized for use in many
commercial and industrial applications where high density, low pin count, low voltage,
and low power are essential. To allow for simple in-system reprogrammability, the
AT26DF041 does not require high input voltages for programming. The device operates from a single power supply, 3.0V to 3.6V or 2.7V to 3.6V, for both the program
and read operations. The AT26DF041 is enabled through the chip select pin (CS) and
accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output
(SO), and the Serial Clock (SCK).
Table 1-1.
Pin Configurations
Pin Name
Function
CS
Chip Select
SCK
Serial Clock
SI
Serial Input
SO
Serial Output
WP
Hardware Write
Protect Pin
8-SOIC
CS
SO
WP
GND
1
2
3
4
8-MLF Top View
8
7
6
5
VCC
NC
SCK
SI
CS
SO
WP
GND
1
2
3
4
8
7
6
5
VCC
NC
SCK
SI
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To allow for simple in-system reprogrammability, the AT26DF041 does not require high input
voltages for programming. The device operates from a single power supply, 3.0V to 3.6V or
2.7V to 3.6V, for both the program and read operations. The AT26DF041 is enabled through
the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input
(SI), Serial Output (SO), and the Serial Clock (SCK).
All program and erase cycles are self-timed, and no separate erase cycle is required when
using the Page Program with Auto-Erase feature.
2. Block Diagram
WP
WP
LOGIC
STATUS
REGISTER
FLASH MEMORY ARRAY
PAGE (256 BYTES)
BUFFER (256 BYTES)
SCK
CS
VCC
GND
I/O INTERFACE
SI
SO
3. Memory Array
To provide optimal flexibility, the memory array of the AT26DF041 is divided into three levels
of granularity comprising of sectors, blocks, and pages. The Memory Architecture Diagram
illustrates the breakdown of each level and details the number of pages per sector and block.
All program operations to the DataFlash occur either on a byte basis or on a page-by-page
basis; however, the optional erase operations can be performed at the block or page level.
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AT26DF041
4. Memory Architecture Diagram
Block Erase Detail
Block Address
Range
4KB
Block Erase
(20h Command)
7FFFFh – 7F000h
4KB
7EFFFh – 7E000h
4KB
7DFFFh – 7D000h
4KB
...
71FFFh – 71000h
4KB
70FFFh – 70000h
4KB
6FFFFh – 6F000h
4KB
6EFFFh – 6E000h
4KB
...
61FFFh – 61000h
4KB
60FFFh – 60000h
4KB
5FFFFh – 5F000h
4KB
5EFFFh – 5E000h
4KB
...
41FFFh – 41000h
4KB
40FFFh – 40000h
4KB
3FFFFh – 3F000h
4KB
3EFFFh – 3E000h
4KB
...
21FFFh – 21000h
4KB
20FFFh – 20000h
4KB
1FFFFh – 1F000h
4KB
1EFFFh – 1E000h
4KB
...
01FFFh – 01000h
4KB
00FFFh – 00000h
4KB
Internal
Sector
Architecture
Sector 5
Sector 4
(62KB)
Page Erase Detail
2KB
Block Erase
(50h Command)
2KB
2KB
2KB
2KB
2KB
2KB
Sector 2
(128KB)
256 Byte
Page Erase
(20h Command)
(50h Command)
(81h Command)
2KB
61FFFh – 61800h
617FFh – 61000h
60FFFh – 60800h
607FFh – 60000h
5FFFFh – 5F800h
5F7FFh – 5F000h
5EFFFh – 5E800h
5E7FFh – 5E000h
41FFFh – 41800h
417FFh – 41000h
40FFFh – 40800h
407FFh – 40000h
3FFFFh – 3F800h
3F7FFh – 3F000h
3EFFFh – 3E800h
3E7FFh – 3E000h
7FFFFh – 7FF00h
7FEFFh – 7FE00h
7FDFFh – 7FD00h
7FCFFh – 7FC00h
7FBFFh – 7FB00h
7FAFFh – 7FA00h
7F9FFh – 7F900h
256 Bytes
7F8FFh – 7F800h
2KB
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
7F7FFh – 7F700h
7F6FFh – 7F600h
7F5FFh – 7F500h
7F4FFh – 7F400h
7F3FFh – 7F300h
7F2FFh – 7F200h
7F1FFh – 7F100h
7F0FFh – 7F000h
...
...
4KB
...
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
Page Address
Range
2KB
4KB
2KB
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
00FFFh – 00F00h
00EFFh – 00E00h
00DFFh – 00D00h
00CFFh – 00C00h
00BFFh – 00B00h
00AFFh – 00A00h
009FFh – 00900h
008FFh – 00800h
007FFh – 00700h
006FFh – 00600h
005FFh – 00500h
004FFh – 00400h
003FFh – 00300h
002FFh – 00200h
001FFh – 00100h
000FFh – 00000h
...
2KB
2KB
2KB
2KB
2KB
2KB
2KB
2KB
Sector 0
(128KB)
2KB
Block Erase
...
2KB
2KB
2KB
2KB
2KB
2KB
2KB
2KB
Sector 1
(128KB)
71FFFh – 71800h
717FFh – 71000h
70FFFh – 70800h
707FFh – 70000h
6FFFFh – 6F800h
6F7FFh – 6F000h
6EFFFh – 6E800h
6E7FFh – 6E000h
...
2KB
2KB
2KB
2KB
2KB
2KB
2KB
2KB
4KB
Block Erase
7FFFFh – 7F800h
7F7FFh – 7F000h
7EFFFh – 7E800h
7E7FFh – 7E000h
7DFFFh – 7D800h
7D7FFh – 7D000h
...
2KB
2KB
2KB
2KB
2KB
2KB
2KB
2KB
Sector 3
(64KB)
Block Address
Range
21FFFh – 21800h
217FFh – 21000h
20FFFh – 20800h
207FFh – 20000h
1FFFFh – 1F800h
1F7FFh – 1F000h
1EFFFh – 1E800h
1E7FFh – 1E000h
...
2KB
2KB
2KB
2KB
01FFFh – 01800h
017FFh – 01000h
00FFFh – 00800h
007FFh – 00000h
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5. Device Operation
The device operation is controlled by instructions from a host processor. The list of instructions
and their associated opcodes are contained in Tables 1 through 3. A valid instruction starts
with the falling edge of CS followed by the appropriate 8-bit opcode and the desired buffer or
main memory address location. While the CS pin is low, toggling the SCK pin controls the
loading of the opcode and the desired buffer or main memory address location through the SI
(serial input) pin. All instructions, addresses and data are transferred with the most significant
bit (MSB) first.
Main memory addressing is referenced using the terminology A23 - A0.
5.1
Read Commands
By specifying the appropriate opcode, data can be read from the main memory or from either
one of the two data buffers.
5.1.1
Continuous Array Read
The Continuous Array Read command can be used to sequentially read a continuous stream
of data from the device by simply providing a clock signal once the initial starting address has
been specified. The device incorporates an internal address counter that automatically increments on every clock cycle.
Two opcodes, 0BH and 03H, can be used for the Continuous Array Read command. The use
of each opcode depends on the maximum SCK frequency that will be used to read data from
the device. The 0BH opcode can be used at any SCK frequency up to the maximum specified
by fCAR1. The 03H opcode can be used for lower frequency read operations up to the maximum specified by fCAR2.
To perform a Continuous Array Read, the CS pin must first be asserted and the appropriate
opcode must be clocked in. After the opcode has been clocked in, three address bytes (24 bits
representing A23 - A0) must be clocked in to specify the starting address location of the first
byte to read within the memory array. Since the upper address limit of the device is 07FFFFh,
the first five address bits (A23 - A19) will be ignored. If the 0BH opcode is used, one don't care
byte must also be clocked in after the three address bytes.
After the three address bytes (and the one don't care byte if using opcode 0BH) have been
clocked in, additional pulses on the SCK pin will result in serial data being output on the SO
(serial output) pin. The data is always output with the most-significant bit (MSB) of a byte first.
When the last bit of the memory array has been read, the device will continue reading back at
the beginning of the array (000000h). No delays will be incurred when wrapping around from
the end of the array to the beginning of the array.
Deasserting the CS pin (a low-to-high transition) will terminate the read operation and put the
SO pin into a high-impedance state. The Continuous Array Read command bypasses both
data buffers and leaves the contents of the buffers unchanged.
5.1.2
4
Status Register Read
The status register can be used to determine the device’s Ready/Busy status or the device
density. To read the status register, an opcode of 05H must be loaded into the device. After
the last bit of the opcode is shifted in, the eight bits of the status register, starting with the MSB
(bit 7), will be shifted out on the SO pin during the next eight clock cycles. After bit 0 of the status register has been shifted out, the sequence will repeat itself (as long as CS remains low
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AT26DF041
and SCK is being toggled) starting again with bit 7. The data in the status register is constantly
updated, so each repeating sequence will output new data.
Table 5-1.
Status Register Format
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
X
X
0
1
1
1
X
RDY/BUSY
Ready/Busy status is indicated using bit 0 of the status register. If bit 0 is a 0, then the device
is not busy and is ready to accept the next command. If bit 0 is a 1, then the device is in a busy
state. The user can continuously poll bit 0 of the status register by stopping SCK at a low level
once bit 0 has been output. The status of bit 0 will continue to be output on the SO pin, and
once the device is no longer busy, the state of SO will change from 1 to 0. There are five operations which can cause the device to be in a busy state: Page Erase, Block Erase, Byte
Program, Page Program, and Page Program with Auto-Erase.
The device density is indicated using bits 5, 4, 3 and 2 of the status register. For the
AT26DF041, the four bits are 0, 1, 1 and 1. The decimal value of these four binary bits does
not equate to the device density; the four bits represent a combinational code relating to differing densities of Serial DataFlash devices, allowing a total of 16 different density
configurations.
Bits 7, 6, and 1 of the status register will contain undefined data.
5.2
5.2.1
Program and Erase Commands
Byte Program
The Byte Program command can be used to program a single byte of data into a previously
erased memory location. An erased memory location is one that has all eight bits set to the
logical “1” state (a byte value of FFH).
The perform a Byte Program operation, an opcode of 02H must be clocked into the device followed by the 24-bit address sequence denoting which byte location to program. Since the
upper address limit of the device is 07FFFFh, address bits A23 - A19 are ignored. After all
address bits have been shifted in, the device will take the one byte of data from the SI pin and
store it in the internal buffer. If more than one byte of data is clocked in, then only the last byte
of data sent will be stored in the buffer.
When the CS pin is deasserted (low-to-high transition), the device will take the one byte stored
in the internal buffer and program it into the main memory array at the location specified by
A18 - A0. The programming of the byte is internally self-timed and should take place in a maximum time of tBP. During this time, the status register will indicate that the device is busy.
5.2.2
Page Program
An entire previously erased page in the main memory can be programmed by using the Page
Program command. Data is first shifted into the internal buffer and then programmed into the
specified page in main memory. To start the operation, an opcode of 11H must be clocked into
the device followed by the 24-bit address sequence. Address bits A23 - A19 are ignored since
the upper address limit of the device is 07FFFFh. After all address bits have been shifted in,
the device will take data from the SI pin and store it in the buffer starting at the first byte location specified by A7 - A0. If the end of the buffer is reached, the device will wrap around back
to the beginning of the buffer. When there is a low-to-high transition on the CS pin, the device
will program the data stored in the buffer into the specified page in the main memory. It is nec5
3495B–DFLSH–8/05
essary that the page in the main memory has been previously erased. The programming of
the page is internally self-timed and should take place in a maximum time of tP. During this
time, the status register will indicate that the device is busy.
Successive page programming operations without doing a page erase are not recommended.
In other words, changing bytes within a page from a “1” to a “0” during multiple page programming operations without erasing that page is not recommended.
5.2.3
Page Program with Auto-Erase
This operation functions similarly to the Page Program command except that the device will
automatically erase the addressed page in the main memory before it programs the page,
thereby eliminating the need to pre-erase the page or a block of memory. To initiate the operation, the 8-bit opcode of 82H must be clocked into the device followed by the 24-bit address
sequence (A23 - A0). Since the upper address limit of the device is 07FFFFh, the five most
significant bits (A23 - A19) are ignored. After all address bits are shifted in, the device will take
data from the SI pin and store it in the internal buffer. If the end of the buffer is reached, the
device will wrap around back to the beginning of the buffer. When there is a low-to-high transition on the CS pin, the part will first erase the selected page in main memory to all 1s and then
program the data stored in the buffer into the specified page in the main memory. Both the
erase and the programming of the page are internally self-timed and should take place in a
maximum of time tEP. During this time, the status register will indicate that the part is busy.
Because of the single page erase granularity, care must be taken to preserve data integrity
within the memory array when using the Page Program with Auto-Erase command. If multiple
pages of data within a sector are modified in a random fashion numerous times while certain
pages within the same sector are never modified or modified infrequently, then the system
must ensure that each page within the sector is updated/rewritten, or “refreshed”, at least once
within every 10,000 cumulative page erase operations to that sector. For example, if the first
six pages of a sector are used to store static data and the remaining pages are used to store
changing data, then the first six pages of the sector must be “refreshed” within 10,000 cumulative page erase operations to that sector. The pages used to store the changing data do not
need to be “refreshed” provided that the pages are updated sequentially or in such a fashion
that guarantees that each page is rewritten on a fairly even basis.
5.2.4
Page Erase
The optional Page Erase command can be used to individually erase any page in the main
memory array allowing the Page Program or Byte Program commands to be utilized at a later
time. To perform a Page Erase, an opcode of 81H must be loaded into the device followed by
the 24-bit address sequence. Address bits A23 - A19 are ignored since the upper address limit
of the device is 07FFFFh. In addition, address bits A7 - A0 are ignored since a full page of
data is being erased. When a low-to-high transition occurs on the CS pin, the part will erase
the selected page to 1s. The erase operation is internally self-timed and should take place in a
maximum time of tPE. During this time, the status register will indicate that the part is busy.
Because of the single page erase granularity, care must be taken to preserve data integrity
within the memory array when using the Page Erase command. If multiple pages of data
within a sector are modified in a random fashion numerous times while certain pages within
the same sector are never modified or modified infrequently, then the system must ensure that
each page within the sector is updated/rewritten, or “refreshed”, at least once within every
10,000 cumulative page erase operations to that sector. For example, if the first six pages of a
sector are used to store static data and the remaining pages are used to store changing data,
6
AT26DF041
3495B–DFLSH–8/05
AT26DF041
then the first six pages of the sector must be “refreshed” within 10,000 cumulative page erase
operations to that sector. The pages used to store the changing data do not need to be
“refreshed” provided that the pages are updated sequentially or in such a fashion that guarantees that each page is rewritten on a fairly even basis.
5.2.5
Block Erase (2 Kbytes)
A block of 2 Kbytes (eight pages) can be erased at one time allowing the Page Program or
Byte Program commands to be utilized to reduce programming times when writing large
amounts of data to the device. To perform a 2 KB Block Erase, an opcode of 50H must be
loaded into the device, followed by the 24-bit address sequence. As stated previously,
address bits A23 - A19 are ignored. In addition, address bits A10 - A0 are ignored since a full
block of eight pages is being erased, but any address within the block can be used. When a
low-to-high transition occurs on the CS pin, the part will erase the selected block of eight
pages to 1s. The erase operation is internally self-timed and should take place in a maximum
time of tBE1. During this time, the status register will indicate that the part is busy.
5.2.6
Block Erase (4 Kbytes)
A block of 4 Kbytes (16 pages) can be erased at one time allowing the Page Program or Byte
Program commands to be utilized to reduce programming times when writing large amounts of
data to the device. To perform a 4 KB Block Erase, an opcode of 20H must be clocked into the
device followed by the 24 bit address sequence (A23 - A0), of which address bits A23 - A19
are ignored since the upper address limit of the device is 07FFFFh. In addition, address bits
A11 - A0 are ignored since a full block of 16 pages is being erased; however, any address
within the block can be used to specify which block to erase. When the CS pin is deasserted,
the device will erase the selected block of 16 pages to logical 1s. The erase operation is internally self-timed and should take place in a maximum of time of tBE2. During this time, the status
register will indicate that the device is busy.
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3495B–DFLSH–8/05
6. Manufacturer and Device ID Read
This instruction allows the user to read the Manufacturer ID, Device ID, and Extended Device Information. A 1-byte opcode,
9FH, must be clocked into the device while the CS pin is low. After the opcode is clocked in, the Manufacturer ID, 2 bytes of
Device ID and Extended Device Information will be clocked out on the SO pin. The fourth byte of the sequence output is the
Extended Device Information String Length byte. This byte is used to signify how many bytes of Extended Device Information will be output. Reading the Extended Device Information String Length (byte 4) and any subsequent information is
optional.
6.1
6.1.1
Manufacturer and Device ID Information
Byte 1 – Manufacturer ID
JEDEC Assigned Code
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
1FH
0
0
0
1
1
1
1
1
6.1.2
Manufacturer ID
Byte 2 – Device ID (Part 1)
Family Code
Density Code
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Family Code
44H
0
1
0
0
0
1
0
0
Density Code
6.1.3
010 = AT26xxx Series
00100 = 4-Mbit
Byte 3 – Device ID (Part 2)
MLC Code
Product Version Code
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
00H
0
0
0
0
0
0
0
0
6.1.4
1FH = Atmel
MLC Code
000 = 1-bit/cell Technology
Product Version
00000 = Initial version
Byte Count
00H = 0 Bytes of Information
Byte 4 – Extended Device Information String Length
Byte Count
Hex
Value
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
00H
0
0
0
0
0
0
0
0
CS
SI
9FH
Opcode
SO
1FH
44H
00H
00H
Data
Data
Manufacturer ID
Byte n
Device ID
Byte 1
Device ID
Byte 2
Extended
Device
Information
String Length
Extended
Device
Information
Byte x
Extended
Device
Information
Byte x + 1
Each transition represents
8 bits and 8 clock cycles
Note:
8
This information
would only be output
if the Extended Device
Information String Length
value was something
other than 00H.
Based on JEDEC publication 106 (JEP106), Manufacturer ID data can be comprised of any number of bytes. Some manufacturers may have
Manufacturer ID codes that are two, three or even four bytes long with the first byte(s) in the sequence being 7FH. A system should detect code
7FH as a “Continuation Code” and continue to read Manufacturer ID bytes. The first non-7FH byte would signify the last byte of Manufacturer ID
data. For Atmel (and some other manufacturers), the Manufacturer ID data is comprised of only one byte.
AT26DF041
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AT26DF041
7. Pin Descriptions
7.1
Serial Input (SI)
The SI pin is an input-only pin and is used to shift data into the device. The SI pin is used for all
data input including opcodes and address sequences.
7.2
Serial Output (SO)
The SO pin is an output-only pin and is used to shift data out from the device.
7.3
Serial Clock (SCK)
The SCK pin is an input-only pin and is used to control the flow of data to and from the
DataFlash. Data is always clocked into the device on the rising edge of SCK and clocked out
of the device on the falling edge of SCK.
7.4
Chip Select (CS)
The DataFlash is selected when the CS pin is low. When the device is not selected, data will
not be accepted on the SI pin, and the SO pin will remain in a high-impedance state. A high-tolow transition on the CS pin is required to start an operation, and a low-to-high transition on
the CS pin is required to end an operation.
7.5
Write Protect (WP)
If the WP pin is held low, the top 256 pages (64K-bytes of address locations 07FFFFh to
070000h) of the main memory cannot be reprogrammed. The only way to reprogram the top
256 pages is to first drive the protect pin high and then use the program commands previously
mentioned. If this pin and feature are not utilized it is recommended that the WP pin be driven
high externally.
8. Power-on/Reset State
When power is first applied to the device, or when recovering from a reset condition, the
device will default to SPI Mode 3. In addition, the SO pin will be in a high-impedance state, and
a high-to-low transition on the CS pin will be required to start a valid instruction. The SPI mode
will be automatically selected on every falling edge of CS by sampling the inactive clock state.
After power is applied and VCC is at the minimum datasheet value, the system should wait 20
ms before an operational mode is started.
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3495B–DFLSH–8/05
Table 8-1.
Read Commands
Command
Opcode
Address
Bytes
Dummy
Bytes
Data
Bytes
Continuous Array Read
0BH
0000 1011
3
1
1+
Continuous Array Read (Low Frequency)
03H
0000 0011
3
0
1+
Status Register Read
05H
0000 0101
0
0
1+
Manufacturer and Device ID Read
9FH
1001 1111
0
0
1+
Address
Bytes
Dummy
Bytes
Data
Bytes
Table 8-2.
Erase and Program Commands
Command
Opcode
Page Erase
81H
1000 0001
3
0
0
Block Erase (2 KB)
50H
0101 0000
3
0
0
Block Erase (4 KB)
20H
0010 0000
3
0
0
Byte Program
02H
0000 0010
3
0
1
Page Program
11H
0001 0001
3
0
256
Page Program with Auto-Erase
82H
1000 0010
3
0
256
Notes:
10
1. Address bits A23 - A19 are don’t care bits because the upper address limit of the device is 07FFFFh.
Address bits A7 - A0 are don’t care for the Page Erase Command.
Address bits A10 - A0 are don’t care for the 2 KB Block Erase Command.
Address bits A11 - A0 are don’t care for the 4 KB Block Erase Command.
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AT26DF041
9. Electrical Specifications
Table 9-1.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE:
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Table 9-2.
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
DC and AC Operating Range
AT26DF041
Operating Temperature (Case)
Ind.
-40°C to 85°C
(1)
VCC Power Supply
Note:
2.7V to 3.6V
1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an operational mode is started.
Table 9-3.
DC Characteristics
Symbol
Parameter
Condition
ISB
Standby Current
ICC1
Active Current, Read
Operation
Min
Typ
Max
Units
CS, WP = VCC, all inputs at
CMOS levels
2
10
µA
f = 33 MHz; IOUT = 0 mA;
VCC = 3.6V
8
15
mA
f = 20 MHz; IOUT = 0 mA;
VCC = 3.6V
4
10
mA
15
35
mA
ICC2
Active Current,
Program/Erase Operation
VCC = 3.6V
ILI
Input Load Current
VIN = CMOS levels
1
µA
ILO
Output Leakage Current
VI/O = CMOS levels
1
µA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 1.6 mA; VCC = 2.7V
VOH
Output High Voltage
IOH = -100 µA
2.0
V
0.4
VCC - 0.2V
V
V
11
3495B–DFLSH–8/05
Table 9-4.
AC Characteristics
AT26DF041
2.7V Vcc
Symbol
Parameter
fSCK
SCK Frequency
fCAR1
Max
Units
25
33
MHz
SCK Frequency for Continuous Array Read
25
33
MHz
fCAR2
SCK Frequency for Continuous Array Read (Low Frequency)
20
20
MHz
tWH
SCK High Time
18
13
ns
tWL
SCK Low Time
18
13
ns
tCS
Minimum CS High Time
100
100
ns
tCSS
CS Setup Time
20
20
ns
tCSH
CS Hold Time
20
20
ns
tSU
Data In Setup Time
5
3
ns
tH
Data In Hold Time
5
3
ns
tHO
Output Hold Time
0
0
ns
tDIS
Output Disable Time
12
10
ns
tV
Output Valid
15
11
ns
tEP
Page Erase and Programming Time
12
12
ms
tBP
Byte Program Time
30
30
µs
tP
Page Programming Time
5
5
ms
tPE
Page Erase Time
8
8
ms
tBE1
Block Erase (2 KB) Time
10
10
ms
tBE2
Block Erase (4 KB) Time
12
12
ms
12
Min
3.0V Vcc
Max
Min
AT26DF041
3495B–DFLSH–8/05
AT26DF041
10. Input Test Waveforms and Measurement Levels
AC
DRIVING
LEVELS
2.4V
AC
MEASUREMENT
LEVEL
2.0
0.8
0.45V
tR, tF < 3 ns (10% to 90%)
11. Output Test Load
DEVICE
UNDER
TEST
30 pF
12. AC Waveforms
Two different timing diagrams are shown below. Waveform 1 shows timing that is compatible
with SPI Mode 0, and Waveform 2 shows timing that is compatible with SPI Mode 3. The setup
and hold times for the SI signal are referenced to the low-to-high transition on the SCK signal.
Figure 12-1. Waveform 1 – SPI Mode 0
tCS
CS
tWH
tCSS
tWL
tCSH
SCK
tHO
tV
SO
HIGH IMPEDANCE
VALID OUT
tSU
tDIS
HIGH IMPEDANCE
tH
VALID IN
SI
Figure 12-2. Waveform 2 – SPI Mode 3
tCS
CS
tCSS
tWL
tWH
tCSH
SCK
tV
SO
HIGH Z
tHO
VALID OUT
tSU
SI
tDIS
HIGH IMPEDANCE
tH
VALID IN
13
3495B–DFLSH–8/05
Figure 12-3. Command Sequence for Read/Write Operations (except Status Register Read)
SI
CMD
8 bits
8 bits
8 bits
ADDRESS BYTES
MSB
XXXX
XXXX XXXX
XXXX XXXX
A15-A8
A23-A16
XXXX
LSB
A7-A0
13. Write Operations
The following waveforms illustrate the various write sequences available.
Figure 13-1. Byte Program
· Starts self-timed program operation
CS
SI
CMD
A23-A16
A15-A8
A7-A0
n
Figure 13-2. Page Program
· Completes writing into selected buffer
· Starts self-timed erase/program operation
CS
SI
CMD
A23-A16
A15-A8
A7-A0
n
n+1
Last Byte
Each transition represents
8 bits and 8 clock cycles
n = 1st byte read
n+1 = 2nd byte read
14. Read Operations
The following waveform illustrates the read sequence available.
Figure 14-1. Continuous Array Read
Don't Care byte not needed for Low Frequency read (03H opcode)
CS
SI
SO
Each transition represents
8 bits and 8 clock cycles
14
CMD
A23-A16
A15-A8
A7-A0
X
n
n+1
n = 1st byte read
n+1 = 2nd byte read
AT26DF041
3495B–DFLSH–8/05
AT26DF041
15. Detailed Bit-level Read Timing – SPI Mode 0
15.1
Continuous Array Read (Opcode 0BH)
CS
SCK
1
2
38
39
40
0
0
X
X
X
41
42
43
tSU
SI
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 0
OF
BYTE n
15.2
D6
D5
BIT 7
OF
BYTE n+1
Continuous Array Read (Low Frequency: Opcode 03H)
CS
SCK
1
2
30
31
32
0
0
X
X
X
33
34
35
tSU
SI
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 0
OF
BYTE n
15.3
D6
D5
BIT 7
OF
BYTE n+1
Status Register Read (Opcode: 05H)
CS
SCK
1
2
0
0
3
4
5
6
7
8
0
1
9
10
D7
MSB
D6
11
12
16
17
tSU
COMMAND OPCODE
SI
0
0
0
1
tV
SO
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D5
D4
D1
D0
LSB
D7
MSB
15
3495B–DFLSH–8/05
16. Detailed Bit-level Read Timing – SPI Mode 3
16.1
Continuous Array Read (Opcode 0BH)
CS
SCK
1
2
0
0
39
40
X
X
41
42
43
tSU
SI
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 0
OF
BYTE n
16.2
D6
D5
BIT 7
OF
BYTE n+1
Continuous Array Read (Low Frequency: Opcode 03H)
CS
SCK
1
2
0
0
31
32
X
X
33
34
35
tSU
SI
X
tV
DATA OUT
HIGH-IMPEDANCE
SO
D7
D6
D5
D2
D1
LSB
MSB
D0
D7
BIT 0
OF
BYTE n
16.3
D6
D5
BIT 7
OF
BYTE n+1
Status Register Read (Opcode: 05H)
CS
SCK
1
2
0
0
3
4
5
6
7
8
0
1
9
10
D7
MSB
D6
11
12
17
tSU
COMMAND OPCODE
SI
0
0
0
1
tV
SO
16
HIGH-IMPEDANCE
STATUS REGISTER OUTPUT
D5
D4
D0
LSB
D7
MSB
D6
AT26DF041
3495B–DFLSH–8/05
AT26DF041
17. Ordering Information
17.1
Green Packages (Pb/Halide-free/RoHS Compliant)
fSCK
(MHz)
ICC (mA)
Active
33
15
Standby
Ordering Code
Package
Operation Range
0.01
AT26DF041-MU
AT26DF041-SU
8M1-A
8S2
Industrial
(-40°C to 85°C)
Package Type
8M1-A
8-contact, 5 mm x 6 mm Very Thin Micro Lead-Frame Package (MLF)
8S2
8-lead, 0.209" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
17
3495B–DFLSH–8/05
18. Packaging Information
18.1
8M1-A – MLF
D
D1
0
Pin 1 ID
E
E1
SIDE VIEW
TOP VIEW
A3
A2
A1
A
0.08 C
COMMON DIMENSIONS
(Unit of Measure = mm)
D2
Pin #1 Notch
(0.20 R)
e
E2
b
SYMBOL
MIN
NOM
A
–
0.85
1.00
A1
–
–
0.05
A2
0.65 TYP
A3
0.20 TYP
b
L
K
BOTTOM VIEW
0.35
0.40
D
6.00 TYP
D1
5.75 TYP
D2
3.20
3.40
E
5.00 TYP
E1
4.75 TYP
E2
3.80
4.00
e
L
NOTE
0.48
3.60
4.20
1.27
0.50
0.60
0
K
MAX
0.75
12o
1.30 REF
12/6/04
R
18
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8M1-A, 8-lead, 6 x 5 x 1.00 mm Body, Very Thin Dual Flat Package
No Lead (MLF)
DRAWING NO.
8M1-A
REV.
A
AT26DF041
3495B–DFLSH–8/05
AT26DF041
18.2
8S2 – EIAJ SOIC
C
1
E
E1
L
N
Top View
∅
End View
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
Side View
NOM
MAX
NOTE
A
1.70
2.16
A1
0.05
0.25
b
0.35
0.48
5
C
0.15
0.35
5
D
5.13
5.35
E1
5.18
5.40
E
7.70
8.26
L
0.51
0.85
∅
0°
8°
e
Notes: 1.
2.
3.
4.
5.
MIN
1.27 BSC
2, 3
4
This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs are not included.
It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
Determines the true geometric position.
Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/−0.005 mm.
10/7/03
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
DRAWING NO.
8S2
REV.
C
19
3495B–DFLSH–8/05
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