TOSHIBA TLRME28C

TL(RE,RME,SE,OE,YE,GE)28C(F)
TOSHIBA InGaAℓP LED
TLRE28C(F),TLRME28C(F),TLSE28C(F),TLOE28C(F),
TLYE28C(F),TLGE28C(F)
Unit: mm
○ Panel Circuit Indicator
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
•
4.3x5mm
•
InGaAℓP technology
•
Colored Transparent lens
•
Lineup: 6 colors (red,yellow, green)
•
Excellent low current light output
•
High intensity light emission
•
Applications: message boards, dashboard displays
Lineup
Product Name
Color
Material
JEDEC
―
TLRE28C(F)
Red
InGaAℓP
EIAJ
―
TLRME28C(F)
Red
InGaAℓP
TOSHIBA
TLSE28C(F)
Red
InGaAℓP
Weight: 0.25 g (Typ.)
TLOE28C(F)
Orange
InGaAℓP
TLYE28C(F)
Yellow
InGaAℓP
TLGE28C(F)
Green
InGaAℓP
4-5AQ1
Absolute Maximum Ratings (Ta = 25°C)
Product Name
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
TLRE28C(F)
50
4
120
TLRME28C(F)
50
4
120
TLSE28C(F)
50
4
120
TLOE28C(F)
50
4
120
TLYE28C(F)
50
4
120
TLGE28C(F)
50
4
120
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
Electrical and Optical Characteristics (Ta = 25°C)
Product Name
Reverse
Current
IR
Forward Voltage
VF
λd
λP
Δλ
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLRE28C(F)
630
(644)
20
20
85
200
20
1.9
2.4
20
50
4
TLRME28C(F)
626
(636)
23
20
85
200
20
1.9
2.4
20
50
4
TLSE28C(F)
613
(623)
20
20
85
300
20
1.9
2.4
20
50
4
TLOE28C(F)
605
(612)
20
20
153
500
20
2.0
2.4
20
50
4
TLYE28C(F)
587
(590)
17
20
153
350
20
2.0
2.4
20
50
4
TLGE28C(F)
571
(574)
17
20
47.6
150
20
2.0
2.4
20
50
4
mA
μA
V
Unit
•
Luminous Intensity
IV
Typ. Emission Wavelength
nm
mA
mcd
mA
V
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: below the lead stopper of the device)
•
If the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress
to the resin. Soldering should be performed after lead forming.
•
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLRE28C(F)
IF – V F
IV – IF
3000
IV (mcd)
Ta = 25 °C
50
30
Luminous intensity
Forward current
IF
(mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
10
Forward current
(V)
IV – Tc
Relative luminous intensity
3
1
0.5
0.3
20
Case temperature
(mA)
40
Tc
60
IF = 20mA
Ta = 25 °C
0.8
0.6
0.4
0.2
0
580
0.1
80
600
620
640
Wavelength
(°C)
660
680
700
λ (nm)
Radiation pattern
IF
(mA)
IF – Ta
Allowable forward current
IV
Relative luminous intensity
5
0
IF
Relative luminous intensity – Wavelength
1.0
10
−20
100
80
60
40
20
0
0
20
40
60
Ambient temperature
3
80
Ta
100
120
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLRME28C(F)
IF – V F
IV – IF
3000
IV (mcd)
Ta = 25 °C
50
30
Luminous intensity
Forward current
IF
(mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
10
2.3
Ta = 25 °C
(V)
IV – Tc
Relative luminous intensity
3
1
0.5
0.3
Case temperature
(mA)
40
Tc
60
80
IF = 20mA
Ta = 25 °C
0.8
0.6
0.4
0.2
0
580
0.1
600
620
640
Wavelength
(°C)
660
680
700
100
120
λ (nm)
Radiation pattern
IF
(mA)
IF – Ta
Allowable forward current
IV
Relative luminous intensity
5
20
IF
Relative luminous intensity – Wavelength
1.0
0
100
Forward current
10
−20
10
1
80
60
40
20
0
0
20
40
60
Ambient temperature
4
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLSE28C(F)
IF – V F
IV – IF
10000
IV (mcd)
Ta = 25 °C
50
30
Luminous intensity
Forward current
IF
(mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
10
2.3
1
Relative luminous intensity
IV
0.5
0.3
40
Tc
60
80
IF = 20mA
Ta = 25 °C
0.8
0.6
0.4
0.2
0
560
0.1
580
600
620
Wavelength
(°C)
640
660
680
λ (nm)
Radiation pattern
IF
(mA)
IF – Ta
Allowable forward current
Relative luminous intensity
1
Case temperature
(mA)
IF
Relative luminous intensity – Wavelength
1.0
20
100
Forward current
IV – Tc
0
10
(V)
3
−20
Ta = 25 °C
80
60
40
20
0
0
20
40
60
Ambient temperature
5
80
Ta
100
120
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLOE28C(F)
IF – V F
IV – IF
100
10000
IV (mcd)
30
Luminous intensity
Forward current
IF
(mA)
Ta = 25°C
50
10
5
3
1
1.6
1000
100
10
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
2.3
Ta = 25 °C
1
10
100
Forward current
(V)
IV – Tc
(mA)
IF
Relative luminous intensity – Wavelength
1.0
IF =IF20
mA
= 20mA
Ta Ta
= 25°C
= 25 °C
Relative luminous intensity
1
0.5
0.3
0.1
20
Case temperature
40
Tc
60
0.8
0.6
0.4
0.2
0
540
80
560
(°C)
580
600
Wavelength
620
640
660
100
120
λ (nm)
Radiation pattern
IF – Ta
(mA)
0
IF
−20
Allowable forward current
Relative luminous intensity
IV
3
80
60
40
20
0
0
20
40
60
Ambient temperature
6
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLYE28C(F)
IF – V F
IV – IF
10000
IV (mcd)
Ta = 25 °C
50
30
Luminous intensity
Forward current
IF
(mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
10
2.3
Ta = 25 °C
1
10
100
Forward current
(V)
IV – Tc
(mA)
IF
Relative luminous intensity – Wavelength
3
1.0
Relative luminous intensity
1
0.5
0.3
0.1
20
Case temperature
40
Tc
60
Ta = 25 °C
0.8
0.6
0.4
0.2
0
540
80
560
(°C)
580
600
Wavelength
620
640
660
100
120
λ (nm)
Radiation pattern
IF – Ta
(mA)
0
IF
−20
Allowable forward current
Relative luminous intensity
IV
IF = 20mA
80
60
40
20
0
0
20
40
60
Ambient temperature
7
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLGE28C(F)
IF – V F
IV – IF
3000
IV (mcd)
Ta = 25 °C
50
30
Luminous intensity
Forward current
IF
(mA)
100
10
5
3
1
1.6
1.7
1.8
1.9
2.0
Forward voltage
2.1
VF
2.2
1000
100
10
2.3
1
100
Forward current
IV – Tc
(mA)
IF
Relative luminous intensity – Wavelength
1.0
Relative luminous intensity
5
3
1
0.5
0.3
20
Case temperature
40
Tc
60
80
Ta = 25 °C
0.6
0.4
0.2
540
560
580
Wavelength
(°C)
600
620
640
100
120
λ (nm)
Radiation pattern
IF – Ta
(mA)
0
IF
−20
IF = 20mA
0.8
0
520
0.1
Allowable forward current
IV
10
(V)
10
Relative luminous intensity
Ta = 25 °C
80
60
40
20
0
0
20
40
60
Ambient temperature
8
80
Ta
(°C)
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01