TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) z High forward transfer admittance: |Yfs| = 13 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage V VGSS ±20 DC (Note 1) ID 8 Pulse (Note 1) IDP 32 Single-device operation (Note 3a) PD (1) 1.5 Single-device value at dual operation (Note 3b) PD(2) 1.1 Single-device operation (Note 3a) PD (1) 0.75 Single-device value at dual operation (Note 3b) PD (2) 0.45 Single pulse avalanche energy (Note 4) EAS 83.2 mJ Avalanche current IAR 8 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.1 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) A W JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) W Circuit Configuration 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-01-16 TPC8210 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 114 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking (Note 6) TPC8210 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) (a) a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 8 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number to 52 or 53) Year of manufacture (The last digit of a year) 2 2007-01-16 TPC8210 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — ― ±10 µA Drain cut−OFF current IDSS VDS = 30 V, VGS = 0 V ― ― 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ― ― V (BR) DSS ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ Vth VDS = 10 V, ID = 1 mA 1.3 ― 2.5 RDS (ON) VGS = 4.5 V, ID = 4 A ⎯ 13 20 RDS (ON) VGS = 10 V, ID = 4 A ― 11 15 Forward transfer admittance |Yfs| VDS = 10 V, ID = 4 A 6.5 13 ― Input capacitance Ciss ― 3530 ― Reverse transfer capacitance Crss ― 495 ― Output capacitance Coss ― 580 ― ― 26 ― ― 39 ― Gate threshold voltage Drain−source ON resistance Rise time Turn−ON time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Fall time Turn−OFF time 4.7 Ω Switching time tf toff Total gate charge (Gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“miller”) charge Qgd V V mΩ S pF ID = 4 A 10 V VGS 0V RL = 3.7 Ω Drain−source breakdown voltage VOUT VDD ∼ − 15 V Duty < = 1%, tw = 10 µs VDD ≈ 24 V, VGS = 10 V, ID = 8 A ns ― 32 ― ― 115 ― ― 75 ― ― 6 ― ― 19 ― nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — 32 A — — −1.2 V VDSF IDR = 8 A, VGS = 0 V 3 2007-01-16 TPC8210 ID – VDS 20 4 6 8 10 8 Common source Ta = 25°C Pulse test 2.8 10 (A) 3 2.7 2.6 ID 2.8 6 4 2.5 4 6 8 2.9 Drain current (A) ID Drain current 8 Common source Ta = 25°C Pulse test 3 16 12 ID – VDS 10 2.9 2.7 2.6 2.5 2 2.4 2.4 VGS = 2.3 V 0 0 1 2 3 Drain-source voltage 4 0 0 5 VDS (V) 0.2 0.4 0.6 Drain-source voltage ID – VGS VDS (V) VDS – VGS 20 1 Common source Ta = 25°C Pulse test 0.8 8 100 Drain-source voltage ID 12 Drain current VDS (A) (V) Common source VDS = 10 V Pulse test 16 Ta = −55°C 25 4 0 0 0.5 1 1.5 2 3 2.5 Gate-source voltage VGS 2.5 0.6 0.4 0.2 0 0 4 (V) 4 8 4 ID = 2A 8 12 Gate-source voltage |Yfs| – ID 16 VGS 20 (V) RDS (ON) – ID 100 100 Common source Ta = 25°C Pulse test −55°C Drain-source ON resistance RDS (ON) (mΩ) (S) Forward transfer admittance ⎪Yfs⎪ 2.3 VGS = 2.2 V 0.8 1.0 Tc = 100°C 10 25°C 1 30 VGE = 4.5 V 10 VGS = 10 V 3 Common source VDS = 10 V Pulse test 0.1 0.1 1 Drain current 10 1 1 100 ID (A) 3 4 30 10 Drain current 100 ID (A) 2007-01-16 TPC8210 IDR – VDS 100 ID = 8, 4, 2 A 20 15 VGS = 4.5 V Drain reverse current IDR (A) ID = 8, 4, 2 A 10 10 V 5 Common source 5 1 3 VGS = 0 V 10 Common source Ta = 25°C Pulse test Pulse test 0 −80 −40 0 40 80 Ambient temperature Ta 120 1 0 160 −0.2 (°C) −0.4 Capacitance – VDS (V) Vth Gate threshold voltage Crss 100 10 0.1 2.5 2 1.5 1 Common source VDS = 10 V 0.5 f = 1 mA Pulse test 1 10 Drain-source voltage 0 −80 100 −40 VDS (V) (V) 20 Drain-source voltage (2) 25 VDS (W) PD 140 (°C) 1.0 (3) (4) 100 150 Ta 30 Common source t = 10 s Ambient temperature Ta 120 Dynamic input/output characteristics (2) Device mounted on a glass-epoxy board (b) (Note 2b) 50 80 30 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) 40 Ambient temperature PD – Ta 2 0 (°C) ID = 8 A 25 Pulse test VDD = 24 V 20 VDS 15 15 12 6 12 10 10 6 VDD = 24 V 5 0 0 200 Ta = 25°C 20 40 60 80 5 VGS (V) (pF) C Capacitance Coss Common source VGS = 10 V ID = 1 mA Pulse test Drain power dissipation VDS (V) Vth – Ta 1000 0 0 −1.2 3 Ciss 0.5 −1 −0.8 Drain-source voltage 10000 1.5 −0.6 Gate-source voltage Drain-source ON resistance RDS (ON) (Ω) RDS (ON) – Ta 25 0 100 Total gate charge Qg (nC) 5 2007-01-16 TPC8210 rth − tw 1000 (4) Normalized transient thermal impedance rth (°C/W) Single pulse (3) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 1 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (S) Safe operating area 100 1 ms* ID max (pluse) * (A) 10 Drain current ID 10 ms* 1 0.1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.1 VDSS max 1 Drain-source voltage 10 100 VDS (V) 6 2007-01-16 TPC8210 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2007-01-16