TOSHIBA SSM3K7002F_05

SSM3K7002F
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
+0.5
2.5-0.3
Low ON-resistance
+0.25
1.5-0.15
: Ron = 3.3 Ω (max) (@VGS = 4.5 V)
2.9±0.2
: Ron = 3.2 Ω (max) (@VGS = 5 V)
: Ron = 3.0 Ω (max) (@VGS = 10 V)
+0.1
0.4-0.05
•
1.9
Small package
0.95 0.95
•
1
2
3
0.3
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
± 20
V
ID
200
IDP
800
Drain power dissipation (Ta = 25°C)
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
DC
Drain current
Pulse
0~0.1
Symbol
+0.2
1.1-0.1
Characteristics
+0.1
0.16-0.06
Maximum Ratings (Ta = 25°C)
1.Gate
2.Source
3.Drain
mA
S-MINI
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Symbol
Min
Typ
Max
Unit
VGS = ± 20 V, VDS = 0
⎯
⎯
± 10
µA
V (BR) DSS
ID = 0.1 mA, VGS = 0
60
⎯
⎯
V
IDSS
VDS = 60 V, VGS = 0
⎯
⎯
1
µA
IGSS
Vth
VDS = 10 V, ID = 0.25 mA
1.0
⎯
2.5
V
⎪Yfs⎪
VDS = 10 V, ID = 200 mA
170
⎯
⎯
mS
ID = 500 mA, VGS = 10 V
⎯
2.0
3.0
ID = 100 mA, VGS = 5 V
⎯
2.1
3.2
ID = 100 mA, VGS = 4.5 V
⎯
2.2
3.3
⎯
17
⎯
pF
⎯
1.4
⎯
pF
pF
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
VDS = 25 V, VGS = 0, f = 1 MHz
Coss
⎯
5.8
⎯
Turn-on delay time
td(on)
⎯
2.4
4.0
Turn-off delay time
td(off)
⎯
26
40
Output capacitance
Switching time
Test Condition
VDD = 30 V , ID = 200 mA ,
VGS = 0 to 10 V
1
Ω
ns
2005-11-03
SSM3K7002F
Switching Time Test Circuit
(a) Test circuit
OUT
10 V
(b) VIN
90 %
IN
50 Ω
10 V
0
10 µs
VDD = 30 V
< 1%
Duty =
VIN: tr, tf < 2 ns
(Zout = 50 Ω)
Common Source
Ta = 25 °C
Marking
10 %
0V
RL
VDD
(c) VOUT
VDD
10 %
90 %
VDS (ON)
tr
tf
td(on)
td(off)
Equivalent Circuit (top view)
3
3
NC
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 0.25 mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a
lower voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on). )
Take this into consideration when using the device.
The recommended VGS voltage for turning on this product is 4.5 V or higher.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2005-11-03
SSM3K7002F
ID - VDS
ID - VGS
1000
1000
Common Source
Ta = 25 °C
900
100
7
700
10
600
3.3
500
3.0
400
2.7
300
2.5
200
100
25 °C
1
- 25 °C
0.1
0.01
0
0.5
1
1.5
Drain-Source Voltage VDS (V)
2
0
RDS(ON) - ID
5
Common Source
Ta = 25 °C
4
3
VGS = 4.5 V
1
5.0 V
2
10 V
1
0
2
3
Gate-Source Voltage VGS (V)
4
5
RDS(ON) - VGS
5
D ra in -S o u rce O N -R e sista n ce
R D S (O N ) (Ω )
D ra in -S o u rce O N -R e sista n ce
R D S (O N ) (Ω )
Ta = 100 °C
10
VGS = 2.3 V
0
Common Source
ID = 100 mA
4
Ta = 100 °C
3
25 °C
2
- 25 °C
1
0
10
100
Drain Current ID (mA)
1000
0
2
RDS(ON) - Ta
5
4
6
Gate-Source Voltage VGS (V)
8
10
Vth - Ta
2
Ga te Th re sh o ld V o lta g e V th (V )
Common Source
D ra in -S o u rce O N -R e sista n ce
R D S (O N ) (Ω )
Common Source
VDS = 10 V
4.5 4.0
D ra in C u rre n t ID (m A )
D ra in C u rre n t ID (m A )
800
5
4
VGS = 4.5 V , ID = 100 mA
3
2
5.0 V , 100 mA 10 V , 500 mA
1
0
Common Source
ID = 0.25 mA
VDS = 10 V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
100
Ambient Temperature Ta (°C)
125
150
-25
3
0
25
50
75
100
Ambient Temperature Ta (°C)
125
150
2005-11-03
SSM3K7002F
|Yfs| - ID
IDR - VDS
1000
Common source
VDS = 10 V
Ta = 25 °C
D ra in R e ve rse C u rre n t ID R (m A )
Fo rw a rd Tra n sfe r A d m itta n ce
|Y fs| (m S )
1000
100
10
800
700
D
600
G
IDR
500
400
S
300
200
100
0
10
100
Drain Current ID (mA)
1000
0
C - VDS
-0.2
-0.4 -0.6
-0.8
-1
Drain-Source Voltage VDS (V)
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 °C
Ciss
10
Coss
-1.2
-1.4
t - ID
10000
S w itch in g Tim e t (n s)
100
C a p a cita n ce C (p F)
Common Source
VGS = 0 V
Ta = 25 °C
900
Common Source
VDD = 30 V
VGS = 0 to 10 V
Ta = 25 °C
tf
1000
100
td(off)
10
td(on)
tr
Crss
1
1
0.1
1
10
Drain-Source Voltage VDS (V)
1
100
10
100
Drain Current ID (mA)
1000
PD - Ta
D ra in P o w e r D issip a tio n P D (m W )
250
200
150
100
50
0
0
20
40
60
80
100 120
Ambient Temperature Ta (°C)
140
160
4
2005-11-03
SSM3K7002F
5
2005-11-03