isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD546/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A -80V(Min)- BD546B; -100V(Min)- BD546C ·Complement to Type BD545/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD546 -40 BD546A -60 BD546B -80 BD546C -100 BD546 -40 BD546A -60 BD546B -80 BD546C -100 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3.5 W 85 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD546/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD546 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT -40 BD546A -60 IC= -30mA ;IB=0 V BD546B -80 BD546C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.625A -0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A -1.0 V Base-Emitter On Voltage IC= -10A; VCE= -4V -1.8 V -0.4 mA -0.7 mA -1.0 mA VBE(on) ICES ICEO Collector Cutoff Current Collector Cutoff Current BD546 VCE= -40V; VBE= 0 BD546A VCE= -60V; VBE= 0 BD546B VCE= -80V; VBE= 0 BD546C VCE= -100V; VBE= 0 BD546/A VCE= -30V; IB= 0 BD546B/C VCE= -60V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V 60 hFE-2 DC Current Gain IC= -5A; VCE= -4V 25 hFE-3 DC Current Gain IC= -10A; VCE= -4V 10 Switching times ton Turn-on Time toff Turn-off Time isc website：www.iscsemi.com IC= -6A; IB1= -IB2= -0.6A; RL= 5Ω; VBE(off)= 4V 2 0.4 μs 0.7 μs isc & iscsemi is registered trademark