TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TOSHIBA InGaAℓP LED TLRE53T,TLRME53T,TLSE53T,TLOE53T,TLYE53T, TLPYE53T,TLGE53T,TLFGE53T,TLPGE53T Panel Circuit Indicators Unit: mm · φ3 mm package · InGaAℓP technology · All plastic mold · Transparent lens · Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure green) · High intensity light emission · Excellent low current light output · Applications: message boards, security devices and dashboard displays Line-up Product Name Color TLRE53T Red TLRME53T Red TLSE53T Red TLOE53T Orange TLYE53T Yellow TLPYE53T Pure Yellow TLGE53T Green TLFGE53T Green TLPGE53T Pure Green Material JEDEC ― JEITA ― TOSHIBA InGaAlP 4-4E1A Weight: 0.14 g 1 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T Maximum Ratings (Ta = 25°C) Forward Current IF (mA) Reverse Voltage VR (V) Power Dissipation PD (mW) TLRE53T 50 4 120 TLRME53T 50 4 120 TLSE53T 50 4 120 TLOE53T 50 4 120 TLYE53T 50 4 120 TLPYE53T 50 4 120 TLGE53T 50 4 120 TLFGE53T 50 4 120 TLPGE53T 50 4 120 Product Name Operating Temperature Topr (°C) Storage Temperature Tstg (°C) -40~100 -40~120 Electrical and Optical Characteristics (Ta = 25°C) Product Name Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR ld lP Dl IF Min Typ. IF Typ. Max IF Max VR TLRE53T 630 (644) 20 20 153 400 20 1.9 2.4 20 50 4 TLRME53T 626 (636) 23 20 272 600 20 1.9 2.4 20 50 4 TLSE53T 613 (623) 20 20 272 800 20 1.9 2.4 20 50 4 TLOE53T 605 (612) 20 20 272 1000 20 2.0 2.4 20 50 4 TLYE53T 587 (590) 17 20 272 800 20 2.0 2.4 20 50 4 TLPYE53T 580 (583) 14 20 153 450 20 2.0 2.4 20 50 4 TLGE53T 571 (574) 17 20 153 400 20 2.0 2.4 20 50 4 TLFGE53T 565 (568) 15 20 85 200 20 2.0 2.4 20 50 4 TLPGE53T 558 (562) 14 20 47.6 130 20 2.1 2.4 20 50 4 mA mA V Unit nm mA mcd mA V Precautions · Please be careful of the following: Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) · If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. 2 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLRE53T IF – VF IV – IF 3000 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 (mcd) 30 Ta = 25°C 1000 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 100 10 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 620 640 Wavelength l (°C) Radiation pattern 660 680 700 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 3 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLRME53T IF – VF IV – IF 3000 100 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 (mcd) 30 Ta = 25°C 1000 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 100 10 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 580 80 600 620 640 Wavelength l (°C) Radiation pattern 660 680 700 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 4 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLSE53T IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 1000 100 10 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 560 80 580 600 620 Wavelength l (°C) Radiation pattern 640 660 680 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 5 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLOE53T IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 1000 100 10 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength l (°C) Radiation pattern 620 640 660 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 6 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLYE53T IF – VF IV – IF 10000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 1000 100 10 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 3 1.0 Relative luminous intensity Ta = 25°C 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength l (°C) Radiation pattern 620 640 660 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 7 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLPYE53T IF – VF IV – IF 100 3000 (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 Ta = 25°C 1000 100 10 5 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 -20 0 20 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 540 80 560 580 600 Wavelength l (°C) Radiation pattern 620 640 660 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 8 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLGE53T IF – VF IV – IF 5000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 1000 100 10 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 520 80 540 560 580 Wavelength l (°C) Radiation pattern 600 620 640 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 9 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLFGE53T IF – VF IV – IF 100 1000 (mcd) Ta = 25°C 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 100 10 3 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 5 3 1 0.5 0.3 0.1 -20 0 20 40 Case temperature Tc 60 0.8 0.6 0.4 0.2 0 520 80 540 560 580 Wavelength l (°C) Radiation pattern 600 620 640 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 10 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T TLPGE53T IF – VF IV – IF 1000 100 Ta = 25°C (mcd) 30 Luminous intensity IV Forward current IF (mA) Ta = 25°C 50 10 5 3 1 1.6 1.7 1.8 1.9 2.0 Forward voltage 2.1 2.2 100 10 1 1 2.3 10 VF (V) Forward current IV – Tc 100 IF (mA) Relative luminous intensity – Wavelength 10 1.0 Ta = 25°C Relative luminous intensity 3 1 0.5 0.3 0.1 -20 0 20 60 40 Case temperature Tc 0.8 0.6 0.4 0.2 0 520 80 540 560 580 Wavelength l (°C) Radiation pattern 600 620 640 100 120 (nm) IF – Ta 80 20° 10° 0° 10° 30° 20° 30° 40° 40° 50° 50° 60° 60° 70° 70° 80° 90° (mA) Ta = 25°C Allowable forward current IF Relative luminous intensity IV IF = 20 mA 5 80° 0 0.2 0.4 0.6 0.8 90° 1.0 60 40 20 0 0 20 40 60 80 Ambient temperature Ta (°C) 11 2002-01-17 TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T RESTRICTIONS ON PRODUCT USE 000707EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 12 2002-01-17