Shindengen DG1M3 Schottky rectifiers (sbd) Datasheet

SHINDENGEN
Schottky Rectifiers (SBD)
Single
OUTLINE DIMENSIONS
DG1M3
Case : G1F
Unit : mm
30V 1A
RATINGS
Absolute Maximum Ratings iTl=25Ž unless otherwise specified)
Item
Symbol
Conditions
Tstg
Storage Temperature
Tj
Operating Junction Temperature
VRM
Maximum Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave, R-load, Ta = 27Ž, *1
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
Peak Surge Forward Current
Ratings
-55 to 150
150
30
1
20
Unit
Ž
Ž
V
A
A
Electrical Characteristics iTl=25Ž unless otherwise specified)
Item
Symbol
Conditions
VF
Forward Voltage
IF=0.2A, Pulse measurement
VF
IF=0.7A, Pulse measurement
IR
Reverse Current
VR=VRM, Pulse measurement
Cj
Junction Capacitance
f=1MHz, VR=10V
Æja junction to ambient, *1
Thermal Resistance
Æja junction to ambient, *2
Æja junction to ambient, *3
Æjl junction to lead, *3
Ratings
Max 0.40
Max 0.46
Max 0.05
Typ 36
Max 210
Max 120
Max 70
Max 20
Unit
V
V
mA
pF
*1
*2
*3
Measured on the 1×1 inch phenol substrate (pattern area : 32.6mm2)
Measured on the 1×1 inch phenol substrate (pattern area : 160mm2)
Measured on the 2×2 inch alumina substrate (pattern area : 2100mm2)
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
Ž/W
DG1M3
Forward Voltage
10
Forward Current
IF [A]
5
2
Tl=150°C [MAX]
Tl=150°C [TYP]
Tl= 25°C [MAX]
Tl= 25°C [TYP]
1
0.5
0.2
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
DG1M3
Reverse Current
100
10
Reverse Current
IR [mA]
Tl=150°C [TYP]
Tl=125°C [TYP]
1
Tl=100°C [TYP]
0.1
Tl=75°C [TYP]
Tl=50°C [TYP]
0.01
Tl=25°C [TYP]
0.001
0.0001
0
5
10
15
20
Reverse Voltage
25
30
VR [V]
35
40
DG1M3
Forward Power Dissipation
Forward Power Dissipation PF [W]
0.8
0.7
DC
D=0.8
0.6
SIN
0.5
0.3
0.5
0.2
0.1
0.4
0.05
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
IO [A]
Average Rectified Forward Current
Tj =150°C
IO
0
tp
D=tp/T
T
DG1M3
Reverse Power Dissipation
Reverse Power Dissipation
PR [W]
1
0.8
DC
D=0.05
0.1
0.2
0.6
0.3
0.4
0.5
0.2
SIN
0.8
0
0
5
10
15
20
Reverse Voltage
25
30
35
VR [V]
Tj =150°C
0
VR
tp
D=tp/T
T
DG1M3
Derating Curve
IO [A]
Average Rectified Forward Current
2
DC
1.5
D=0.8
0.5
1 SIN
0.3
0.2
0.5 0.1
0.05
0
0
20
40
60
80
100
Ambient Temperature
120
140
160
Ta [°C]
VR = 15V
IO
0
0
Glass-epoxy substrate
VR
substrate
tp
Soldering 1.2mm x 1.2mm
Conductor layer 35 µm
D=tp/T
T
DG1M3
Peak Surge Forward Capability
IFSM
30
10ms
1 cycle
25
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
IFSM [A]
Peak Surge Forward Current
10ms
20
15
10
5
0
1
2
5
10
Number of Cycles [cycle]
20
50
DG1M3
Junction Capacitance
1000
Junction Capacitance
Cj [pF]
f=1MHz
Tl=25°C
TYP
100
10
0.1
0.2
0.5
1
2
Reverse Voltage VR [V]
5
10
20
30
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