WINNERJOIN BAV756DW Switching diode Datasheet

RoHS
BAV756DW
D
T
,. L
SOT-363
BAV756DW
SWITCHING DIODE
FEATURES
Power dissipation
PD :
200
mW
(Tamb=25℃)
Collector current
IF:
150
mA
Collector-base voltage
75
V
VR:
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
MARKING:KCA
R
T
C
E
L
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
E
Reverse voltage leakage current
J
E
Forward voltage
Junction capacitance
W
Reveres recovery time
WEJ ELECTRONIC CO.
O
unless
Symbol
Test
V(BR) R
IR= 2.5µA
IC
C
O
N
otherwise
conditions
specified)
MIN
MAX
75
UNIT
V
VR=75V
2.5
VR=20V
0.025
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Cj
VR=0V
2
pF
4
nS
IR
f=1MHz
µA
IF=IR=10mA
trr
Irr=0.1ХIR
RL=100Ω
Http:// www.wej.cn
E-mail:[email protected]
RoHS
BAV756DW
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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