Infineon BCX70H Npn silicon af transistor Datasheet

BCW60, BCX70
NPN Silicon AF Transistors
For AF input stages and driver applications
3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
2
1
Type
Marking
Pin Configuration
BCW60A
AAs
1=B
2=E
3=C
SOT23
BCW60B
ABs
1=B
2=E
3=C
SOT23
BCW60C
ACs
1=B
2=E
3=C
SOT23
BCW60D
ADs
1=B
2=E
3=C
SOT23
BCW60FF
AFs
1=B
2=E
3=C
SOT23
BCW60FN
ANs
1=B
2=E
3=C
SOT23
BCX70G
AGs
1=B
2=E
3=C
SOT23
BCX70H
AHs
1=B
2=E
3=C
SOT23
BCX70J
AJs
1=B
2=E
3=C
SOT23
BCX70K
AKs
1=B
2=E
3=C
SOT23
1
VPS05161
Package
Jan-29-2002
BCW60, BCX70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
32
32
45
Collector-base voltage
VCBO
32
32
45
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Total power dissipation, TS = 71 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
BCW60
BCW60FF BCX70
Unit
V
mA
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
240
RthJS
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW60/60FF
32
-
-
BCX70
45
-
-
BCW60/60FF
32
-
-
BCX70
45
-
-
5
-
-
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
AC Characteristics
Collector cutoff current
nA
ICBO
VCB = 32 V, IE = 0
BCW60 /60FF
-
-
20
VCB = 45 V, IE = 0
BCX70
-
-
20
Collector cutoff current
µA
ICBO
VCB = 32 V, IE = 0 , TA = 150 °C BCW60 / 60FF
-
-
20
VCB = 45 V, IE = 0 , TA = 150 °C BCX70
-
-
20
-
-
20
Emitter cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 µA, VCE = 5 V
hFE-grp. A/ G
20
140
-
hFE-grp. B/ H
20
200
-
hFE-grp. C/ J/ FF
40
300
-
hFE-grp. D/ K/ FN
100
460
-
hFE-grp. A/ G
120
170
220
hFE-grp. B/ H
180
250
310
hFE-grp. C/ J/ FF
250
350
460
hFE-grp. D/ K/ FN
380
500
630
hFE-grp. A/ G
50
-
-
hFE-grp. B/ H
70
-
-
hFE-grp. C/ J/ FF
90
-
-
hFE-grp. D/ K/ FN
100
-
-
hFE
DC current gain 1)
IC = 2 mA, VCE = 5 V
DC current gain 1)
IC = 50 mA, VCE = 1 V
-
hFE
hFE
1) Pulse test: t ≤=300µs, D = 2%
3
Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter saturation voltage1)
V
VCEsat
IC = 10 mA, IB = 0.25 mA
-
0.12
0.25
IC = 50 mA, IB = 1.25 mA
-
0.2
0.55
IC = 10 mA, IB = 0.25 mA
-
0.7
0.85
IC = 50 mA, IB = 1.25 mA
-
0.83
1.05
IC = 10 µA, VCE = 5 V
-
0.52
-
IC = 2 mA, VCE = 5 V
0.55
0.65
0.75
IC = 50 mA, VCE = 1 V
-
0.78
-
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
Base-emitter saturation voltage 1)
VBEsat
Base-emitter voltage 1)
VBE(ON)
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
k
Short-circuit input impedance
hFE-grp.
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
-
2.7
-
B/H
-
3.6
-
C / J / FF
-
4.5
-
D / K / FN
-
7.5
-
h11e
Open-circuit reverse voltage transf.ratio | hFE-grp. h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
10-4
-
1.5
-
B/H
-
2
-
C / J/FF
-
2
-
D / K / FN
-
3
-
1) Pulse test: t ≤=300µs, D = 2%
4
Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Short-circuit forward current transf.ratio | hFE-grp. h21e
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
-
200
-
B/H
-
260
-
C / J/ FF
-
330
-
D / K / FN
-
520
-
S
Open-circuit output admittance
hFE-grp.
IC = 2 mA, VCE = 5 V, f = 1 kHz
A/G
-
18
-
B/H
-
24
-
C / J / FF
-
30
-
D / K / FN
-
50
-
Noise figure
hFE-grp.
h22e
dB
F
IC = 100 µA, VCE = 5 V, RS = 1 k,
f = 1 kHz, f = 200 Hz
Equivalent noise voltage
A-K
-
2
-
FF - FN
-
1
2
-
-
0.135
hFE-grp.
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 10 ... 50 Hz
Vn
µV
FF / FN
5
Jan-29-2002
BCW60, BCX70
Total power dissipation Ptot = f(TS)
Collector-base capacitance CCB = f (VCBO)
Emitter-base capacitance CEB = f (VEBO)
360
12
mW
BCW 60/BCX 70
EHP00327
CCBO
pF
(C EBO)
300
10
P tot
270
240
8
CEBO
210
6
180
150
4
120
CCBO
90
2
60
30
0
0
15
30
45
60
75
0
10 -1
°C 150
TS
90 105 120
V
10 1
V CBO (V EBO )
10 0
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
10 3
BCW 60/BCX 70
EHP00328
Ptot max
5
Ptot DC
D=
10 3
tp
tp
T
BCW 60/BCX 70
EHP00330
MHz
fT
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 2
5
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 1
10 -1
0
10 0
10 1
mA
10 2
ΙC
tp
6
Jan-29-2002
BCW60, BCX70
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC = f (VBEsat ), hFE = 40
IC = f (VCEsat), h FE = 40
10 2
ΙC
BCW 60/BCX 70
EHP00331
10 2
mA
ΙC
100 ˚C
25 ˚C
-50 ˚C
10 1
10 0
10 0
5
5
0.4
100 ˚C
25 ˚C
-50 ˚C
10 1
5
0.2
0.6
0.8
V
10 -1
0
1.2
EHP00332
mA
5
10 -1
0
BCW 60/BCX 70
0.1
0.2
0.3
V BE sat
DC current gain hFE = f (I C)
VCE = 5V
VCE = 5V
ΙC
BCW 60/BCX 70
V
0.5
V CEsat
Collector current IC = f (VBE)
10 2
0.4
EHP00333
10 3
mA
h FE
5
BCW 60/BCX 70
EHP00334
100 ˚C
25 ˚C
10 1
10 2
5
-50 ˚C
5
10 0
5
10 1
100 ˚C
10 -1
25 ˚C
-50 ˚C
5
5
10 -2
0
0.5
V
10 0
10 -2
1.0
10 -1
10 0
10 1
mA 10 2
ΙC
V BE
7
Jan-29-2002
BCW60, BCX70
Collector cutoff current ICBO = f (TA)
h parameter he = f (IC) normalized
VCB = VCEmax
VCE = 5V
10 4
nA
BCW 60/BCX 70
EHP00335
10 2
Ι CBO
he
BCW 60/BCX 70
EHP00336
5
10 3
h 11e
10
max
10 2
VCE = 5 V
1
5
h 12e
10 1
10 0 h
21e
5
typ
10 0
h 22e
10 -1
0
50
100
˚C
10 -1
10 -1
150
5
10 0
ΙC
TA
h parameter he = f (VCE ) normalized
Noise figure F = f (V CE)
IC = 2mA
IC = 0.2mA, R S = 2k, f = 1kHz
2.0
BCW 60/BCX 70
EHP00337
20
Ι C = 2 mA
he
10 1
mA
F
BCW 60/BCX 70
EHP00338
dB
1.5
h 21e
h 11e
15
1.0
h 12e
10
h 22e
0.5
0
5
0
10
20
V
0
10 -1
30
VCE
10 0
10 1
V
10 2
VCE
8
Jan-29-2002
BCW60, BCX70
Noise figure F = f (f)
Noise figure F = f (IC)
IC = 0.2mA, VCE = 5V, RS = 2k
VCE = 5V, f = 120Hz
20
F
BCW 60/BCX 70
EHP00339
20
dB
F
BCW 60/BCX 70
EHP00340
dB
15
15
10
10
RS = 1 MΩ
100 k Ω
10 k Ω
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
10 -2
10 -1
Noise figure F = f (IC )
Noise figure F = f (IC)
VCE = 5V, f = 1kHz
VCE = 5V, f = 10kHz
F
BCW 60/BCX 70
EHP00341
20
dB
F
15
R S = 1 MΩ
BCW 60/BCX 70
EHP00342
dB
RS = 1 M Ω
15
100 kΩ 10 kΩ
100 k Ω
10
10
10 k Ω
500 Ω
1 kΩ
5
5
1 kΩ
500 Ω
0
10 -3
mA 10 1
ΙC
f
20
10 0
10 -2
10 -1
0
10 -3
mA 10 1
10 0
ΙC
10 -2
10 -1
10 0 mA 10 1
ΙC
9
Jan-29-2002
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