HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Q2: z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) JEDEC EIAJ TOSHIBA Weight: 6.8 mg Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic ― ― 2-2J1A Marking Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −30 mA 1 2007-11-01 HN1B01FU Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Equivalent Circuit (Top View) Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA 2 2007-11-01 HN1B01FU Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit PC* 200 mW Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Q1 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO DC current gain Collector-emitter saturation voltage Characteristic Transition frequency Collector output capacitance Test Condition Min Typ. Max Unit VCB = −50V, IE = 0 ― ― −0.1 μA ― VEB = −5V, IC = 0 ― ― −0.1 μA hFE (Note) ― VCE = −6V, IC = −2mA 120 ― 400 VCE (sat) ― IC = −100mA, IB = −10mA ― −0.1 −0.3 V fT ― VCE = −10V, IC = −1mA ― 120 ― MHz Cob ― VCB = −10V, IE = 0, f = 1MHz ― 4 ― pF Min Typ. Max Unit Q2 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― VCB = 60V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO ― VEB = 5V, IC = 0 ― ― 0.1 μA DC current gain hFE (Note) ― VCE = 6V, IC = 2mA 120 ― 400 Collector-emitter saturation voltage VCE (sat) ― IC = 100mA, IB = 10mA ― 0.1 0.25 V fT ― VCE = 10V, IC = 1mA ― 150 ― MHz Cob ― VCB = 10V, IE = 0, f = 1MHz ― 2 ― pF Characteristic Transition frequency Collector output capacitance Test Condition Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol 3 2007-11-01 HN1B01FU Q1 (PNP transistor) 4 2007-11-01 HN1B01FU Q2 (NPN transistor) 5 2007-11-01 stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as HN1B01FU set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. (Q1, Q2 Common) 6 2007-11-01