ISC BDT91 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDT91/93/95
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= 4A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT91; 80V(Min)- BDT93;
100V(Min)- BDT95
·Complement to Type BDT92/94/96
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
VALUE
BDT91
60
BDT93
80
BDT95
100
BDT91
60
BDT93
80
BDT95
100
UNIT
V
V
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.4
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDT91/93/95
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT91
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT93
MIN
TYP.
MAX
UNIT
60
IC= 100mA ; IB= 0
V
80
100
BDT95
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 3.3A
3
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 4V
1.6
V
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB=1/2VCBOmax; IE= 0,TJ=150℃
0.1
5
mA
ICEO
Collector Cutoff Current
VCE= VCEOmax V; IB= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
20
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
5
Current-Gain—Bandwidth Product
IC= 500mA ; VCE= 10V
4
fT
B
200
MHz
Switching times
ton
Turn-On Time
0.5
1
μs
2
4
μs
IC= 4A; IB1= -IB2= 0.4A
toff
Turn-Off Time
isc Website:www.iscsemi.cn
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