Seme LAB BYV32-50M Hermetically sealed dual fast recovery silicon rectifier for hi.rel application Datasheet

BYV32–50M0
BYV32–100M
BYV32–150M
BYV32–200M
MECHANICAL DATA
Dimensions in mm
4.6
0.8
0 .7 6
(0 .0 3 0 )
m in .
1 0 .6
1 3 .5
16.5
3.6
Dia.
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
1
1 3 .7 0
3 .6 0 (0 .1 4 2 )
M a x .
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
1 23
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
1 0.6
HERMETICALLY SEALED
DUAL FAST RECOVERY
SILICON RECTIFIER
FOR HI–REL APPLICATIONS
2
• STANDARD (COMMON CATHODE)
• COMMON ANODE
• SERIES CONNECTION
9 .6
9 .3
1 1 .5
1 1 .2
1.0
2 .5 4
BSC
2. 70
BSC
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• HERMETIC TO220 METAL OR CERAMIC
SURFACE MOUNT PACKAGE
SMD1
CERAMIC SURFACE MOUNT
TO220 METAL
FEATURES
• SCREENING OPTIONS AVAILABLE
• ALL LEADS IOLATED FROM CASE
ELECTRICAL CONNECTIONS
Common Cathode
Common Anode
BYV32-xxxM
Series Connection
BYV32-xxxAM
BYV32-xxxRM
• AVERAGE CURRENT 20A
• VERY LOW REVERSE RECOVERY TIME –
trr = 35ns
• VOLTAGE RANGE 50 TO 200V
1 = A1 Anode 1
1 = K1 Cathode 1
1 = K1 Cathode 1
2 = K Cathode
2 = A Anode
2 = Centre Tap
3 = A2 Anode 2
3 = K2 Cathode 2
3 = A2 Anode
• VERY LOW SWITCHING LOSSES
Applications include secondary rectification in
high frequency switching power supplies.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
BYV32
–50M
50V
BYV32
–100M
100V
BYV32
–150M
150V
BYV32
–200M
200V
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
50V
100V
150V
200V
VR
Continuous Reverse Voltage
50V
100V
150V
200V
IFRM
Repetitive Peak Forward Current
tp = 10ms
200A
IF(AV)
Average Forward Current
Tcase = 70°C
20A
(switching operation, d = 0.5, both diodes conducting)
IFSM
Surge Non Repetitive Forward Current
Tstg
Storage Temperature Range
Tj
Maximum Operating Junction Temperature
Semelab plc.
tp = 10 ms
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
80A
–65 to 200°C
200°C
Prelim. 7/00
BYV32–50M0
BYV32–100M
BYV32–150M
BYV32–200M
ELECTRICAL CHARACTERISTICS (Per Diode) (Tcase = 25°C unless otherwise stated)
Parameter
IR
VF *
trr
Reverse Current
Forward Voltage
Reverse Recovery Time
Test Conditions
Min.
Typ.
Max.
Unit
VR = VRWM
Tj = 25°C
30
mA
VR = VRWM
Tj = 100°C
0.6
mA
IF = 8A
TC = 25°C
1.1
IF = 20A
TC = 25°C
1.5
IF = 5A
TC = 100°C
0.95
IF = 2A
VR = 30V
di / dt = 20A/ms
IF = 1A
VR = 30V
di / dt = 50A/ms
IF = 2A
Qrr
Recovered Charge
VFP
Forward Recovery Overvoltage di / dt = 10A/ms
VR = 30V
di / dt = 20A/ms
IF = 1A
V
35
ns
50
ns
15
nC
V
1.0
* Pulse Test: tp £ 300ms, duty cycle £ 2%.
THERMAL CHARACTERISTICS (TO220 METAL CASE)
RqJC†
Thermal Resistance Junction – Case
1.6
°C/W
† Both diodes conducting.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 7/00
Similar pages