PHILIPS BR211SM Breakover diode Datasheet

Philips Semiconductors
Preliminary specification
Breakover diodes
GENERAL DESCRIPTION
BR211SM series
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in a two terminal, surface
mounting, plastic envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
capability.
Typical
application is transient overvoltage
protection in telecommunications
equipment.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V(BO)
IH
ITSM
BR211SM-140 to BR211SM-280
Breakover voltage
Holding current
Non-repetitive peak current
140
150
-
280
40
V
mA
A
OUTLINE - SOD106
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VD
Continuous voltage
ITSM1
Non repetitive peak current
ITSM2
Non repetitive on-state current
I2t
dIT/dt
I2t for fusing
Rate of rise of on-state current
after V(BO) turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
Ptot
PTM
Tstg
Ta
Tvj
CONDITIONS
MIN.
MAX.
UNIT
-
V
-
75% of
V(BO)typ
40
-
15
A
-
1.1
50
A2s
A/µs
- 40
-
1.2
50
150
70
150
W
W
˚C
˚C
˚C
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
tp = 10 ms
tp = 10 µs
Ta = 25˚C
tp = 1 ms; Ta = 25˚C
off-state
on-state
A
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-sp
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
Rth j-a
Zth j-a
August 1996
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
12
K/W
pcb mounted; minimum footprint
-
100
-
K/W
tp = 1 ms
-
2.62
-
K/W
1
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
V
V(BR)
V(BO)
On-state voltage
Avalanche voltage (min)
Breakover voltage (max)
ITM = 2 A
I(BR) = 10mA
I ≤ IS, tp = 100 µs
BR211SM-140
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
S(br)
IH2
Temperature coefficient of V(BR)
Holding current
Tj = 25˚C
Tj = 70˚C
Switching current
tp = 100 µs
Off-state current
VD = 85% V(BR)min, Tj = 70˚C
1
TM
IS3
ID4
MIN.
TYP.
MAX.
UNIT
-
-
2.5
V
123
140
158
176
193
211
228
246
150
100
10
-
140
160
180
200
220
240
260
280
+0.1
200
-
157
180
202
224
247
269
292
314
1000
10
V
V
V
V
V
V
V
V
%/K
mA
mA
mA
µA
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
dVD/dt
Linear rate of rise of off-state
voltage that will not trigger any
device
Off-state capacitance
V(DM) = 85% V(BR)min; Tj = 70 ˚C
-
-
2000
V/µs
VD = 0 V; f = 1 kHz to 1 MHz
-
-
100
pF
Cj
VT
current
current
IT
ITSM
100%
90%
IS
V(BR)
IH
ID
V(BO)
I(BR)
VD
50%
voltage
30%
0
Symbol
Symmetric BOD
time
10us
Fig.1. Definition of breakover diode characteristics.
700us
Fig.2. Test waveform for high voltage impulse (ITSM1)
according to CCITT vol IX-Rec K17.
1 Measured under pulsed conditions to avoid excessive dissipation
2 The minimum current at which the diode will remain in the on-state
3 The avalanche current required to switch the diode to the on-state
4 Measured at maximum recommended continuous voltage. Relative humidity < 65%.
August 1996
2
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211
ITSM / A
20
BR211SM series
100 ID / uA
I
ITSM2
15
time
max
10
10
1
5
0
0.1
1
10
100
Number of impulses
1000
-40
10000
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; Tj = 70˚C
prior to surge.
1.06
-20
0
20
40
Tj / C
60
80
100
Fig.6. Maximum off-state current as a function of
temperature.
V(BR)(Tj)
V(BR)(25 C)
10 IS / A
1.04
1
1.02
max
1.00
typ
0.1
0.98
0.96
0.01
0.94
min
0.92
0.90
-40
-20
0
20
40
Tj / C
60
80
0.001
-50
100
Fig.4. Normalised avalanche breakdown voltage V(BR)
and V(BO) as a function of temperature.
20
0
50
Tj / C
100
150
Fig.7. Switching current as a function of junction
temperature.
IT / A
10 IH / A
Tj = 25 C
Tj = 150 C
1
15
10
max
typ
0.01
5
0
1
2
VT / V
3
0.001
-50
4
Fig.5. On-state current as a function of on-state
voltage; tp = 200 µs to avoid excessive dissipation.
August 1996
min
0.1
0
50
Tj / C
100
150
Fig.8. Minimum holding current as a function of
temperature.
3
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
100
BR211SM series
Cj / pF
1000
100
BR211-140
typ
BR211
Zth / (K/W)
BR211-280
10
10
PD
1
tp
t
1
1
10
100
0.1
10us
1000
VD / V
0.1s
10s
1000s
tp / s
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; Tj = 25˚C.
August 1996
1ms
Fig.10. Transient thermal impedance. Zth j-a = f(tp).
4
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
MECHANICAL DATA
Dimensions in mm
5.5
5.1
4.5
4.3
Net Mass: 0.2 g
2.3
2.0
0.2
0.05
3.3
2.7
2.8 1.6
2.4 1.4
Fig.11. SOD106.
Notes
1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering
Guidelines". Order code:9397 750 00505.
August 1996
5
Rev 1.100
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
6
Rev 1.100
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