TLP831(F) TOSHIBA PhotoInterrupter Infrared LED + Phototransistor TLP831(F) Lead(Pb)-Free Home Electronics Equipment Such As VCRS And CD Players OA Equipment Such As Copiers, Printers, And Facsimiles Automatic Servicing Equipment Various Position Detection Sensor The TLP831(F) photointerrupter consists of a high radiant power GaAs infrared LED and a Si phototransistor. Housed in a short lead package, this device is ideal for automatic mounting. • Printed wiring board direct mounting type (with a locating pin) • Short lead type enabling automatic mounting : Lead length 3.4 ± 0.3mm • Board thickness: 1.6mm or less • Gap: 4.2mm • Resolution: Slit width 0.5mm TOSHIBA − Weight: 0.58 g (typ.) • High current transfer ratio: IC / IF = 5% (min) • High response speed: tr, tf = 15μs (typ.) • Detector side is of visible light cut type. • Material of the package : Polybutylene terephthalate (UL94V−0, black color) 1 2007-10-01 TLP831(F) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ΔIF / °C −0.33 mA / °C VR 5 V Collector−emitter voltage VCEO 35 V Emitter−collector voltage VECO 5 V Collector power dissipation PC 75 mW Collector power dissipation derating (Ta > 25°C) ΔPC / °C −1 mW / °C IC 50 mA Operating temperature Topr −30~85 °C Storage temperature Tstg −40~100 °C Soldering temperature (5 s) (Note 1) Tsol 260 °C LED Forward current Forward current derating (Ta > 25°C) Detector Reverse voltage Collector current Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: At the location of 1.5mm from the resin package bottom Product Indication Monthly production lot Production month (JAN.-DEC. are indicated by alphabets of A-L) Production Year (last digit of A.D. is indicated) Operating Ranges Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― ― 25 mA Topr −10 ― 75 °C Operating temperature 2 2007-10-01 TLP831(F) Opto Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Min. Typ. Max. Unit 1.00 1.15 1.30 V Forward voltage VF IF = 10mA Reverse current IR VR = 5V ― ― 10 μA Peak emission wavelength λP IF = 10mA ― 940 ― nm VCE = 24V, IF = 0 ― ― 0.1 μA ― 870 ― nm VCE = 2V, IF = 10mA 5 ― 100 % IF = 20mA, IC = 0.5mA ― 0.1 0.35 V VCC = 5V, IC = 1mA RL = 1kΩ (Note 2) ― 15 50 ― 15 50 Dark current ID (ICEO) Peak sensitivity wavelength λP Current transfer ratio Coupled Test Condition IC / IF Collector−emitter saturation voltage VCE (sat) Rise time tr Fall time tf μs Note 2: Switching time measurement circuit and waveform IF IF VCC VOUT 90% VOUT RL 10% td tr ts tf Precautions • When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the whole package for cleaning. Chemicals remaining on a surface of LED or phototransistor, if any, would have a bad influence to the optical characteristics and it may severely lower the conversion efficiency. • The environment to install the device should be determined carefully. Oil or chemicals may cause the package to be dissolved or cracked. • The device should be mounted on an unwrapped surface. • Install this device as avoiding the disturbance light as possible. A visible light cut−off type phototransistor which blocks light with frequencies of 700nm or above is used. However, the device cannot block infrared light with a wavelength of 700nm or more, and it may do mistaken movements. • Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. IC / IF (t) PO (t) = IC / IF (0) PO (0) 3 2007-10-01 TLP831(F) Outline: TOSHIBA Unit: mm Weight: 0.58 g (typ.) Pin Connection 1 4 2 3 1. 2. 3. 4. Anode Cathode Collector Emitter 4 2007-10-01 TLP831(F) PC – Ta 80 60 60 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 80 40 20 0 0 20 40 60 80 40 20 0 0 100 20 IF – VF 40 60 80 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IC/IF – IF (typ.) 100 50 Ta = 25 °C Current transfer ratio IC/IF (%) (mA) Forward current IF VCE = 2 V VCE = 0.4 V 50 30 10 5 Ta=75°C 3 50 30 Sample 2 10 Sample 1 5 25 3 0 −25 1 0.8 1 0.9 1.0 1.1 1.2 Forward voltage VF 1.3 3 5 Forward current IF (V) IC – IF 6 Ta = 25 °C (mA) Sample 2 Sample 1 1 0.5 0.3 3 5 10 Forward current IF 30 50 50 100 (mA) (typ.) Ta = 25 °C 20 5 VCE = 0.4 V Collector current IC (mA) Collector current IC VCE = 2 V 3 0.1 1 30 IC – VCE 10 5 10 1.4 4 3 10 2 (mA) IF = 5 mA 1 0 0 100 15 2 4 6 Collector-emitter voltage 5 8 10 12 VCE (V) 2007-10-01 TLP831(F) Relative IC – Ta ID(ICEO) – Ta (typ.) Dark current ID(ICEO) (μA) 1.0 Relative collector current (typ.) 5 1.2 0.8 VCE = 2 V 0.6 IF = 20 mA IF = 10 mA 0.4 IF = 5 mA 0.2 −40 −20 0 20 40 60 80 100 1 10 VCE = 24V 5 10−1 10−2 Ambient temperature Ta (°C) 10 −3 10−4 0 20 40 60 80 120 100 Ambient temperature Ta (°C) VCE(sat) – Ta 0.20 Collector-emitter saturation voltage VCE(sat) (V) 0.16 (typ.) IC = 0.5 mA IF = 20 mA 0.12 0.08 0.04 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Switching Characteristics (Saturated Operation) 3000 Switching Characteristics (non saturated operation) (typ.) tf Ta = 25 °C 300 IF = 20 mA Ta = 25 °C tr, tf VCC = 5 V 1000 V CC = 5 V 500 VOUT ≥ 4.65 V 100 300 Switching time (μs) Switching time (μs) (typ.) 500 ts 100 50 tr 30 VOUT = 1 V 50 30 td ts 10 5 3 10 5 3 1 1 td 3 5 10 30 50 100 0.5 300 0.3 0.1 Load resistance RL (kΩ) 0.3 0.5 1 3 5 10 30 50 Load resistance RL (kΩ) 6 2007-10-01 TLP831(F) Detecting Position Characteristics(1) Detecting Position Characteristics (2) (Typ.) 1.2 1.2 0 Relative collector current Relative collector current − 0.8 + d 0.6 0.4 VCE = 2 V 1.0 VCE = 2 V Ta = 25 °C Shutter 0.2 0 −3 IF = 10 mA IF = 10 mA 1.0 (Typ.) Ta = 25 °C Shutter 0.8 0.6 d 0.4 0.2 −2 −1 0 Distance 1 2 3 0 4 4 d (mm) 5 6 7 Distance 7 8 9 10 11 d (mm) 2007-10-01 TLP831(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01