CYSTEKEC BTB1426A3 Low vce(sat) pnp epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 1/4
Low VCE(SAT) PNP Epitaxial Planar Transistor
BTB1426A3
Description
The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications.
Features
• High DC current gain and excellent hFE linearity.
• Low Saturation Voltage
VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).
Symbol
Outline
BTB1426A3
TO-92
B:Base
C:Collector
E:Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
Limits
Unit
-20
-20
-6
-3
-5 (Note )
750
167
150
-55~+150
V
V
V
A
mW
°C/W
°C
°C
Note : Single pulse, Pw≤10ms, Duty Cycle≤2%.
BTB1426A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-20
-20
-6
120
-
Typ.
240
35
Max.
-0.1
-0.1
-0.5
820
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-20V
VEB=-5V
IC=-2A, IB=-0.1A
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTB1426A3
Q
120~270
R
180~390
S
270~560
T
390~820
CYStek Product Specification
Spec. No. : C816A3-H
Issued Date : 2003.07.02
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=40IB
Current Gain---HFE
Saturation Voltage---(mV)
VCE=1V
100
100
10
1
1
10
100
1000
1
10000
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
ON Voltage vs Collector Current
Power Derating Curve
1000
Power Dissipation---PD(mW)
ON Voltage---(mV)
800
VBE(ON)@VCE=1V
100
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
Collector Current IC---(mA)
BTB1426A3
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C816A3-H
Issued Date : 2003.07.02
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
TO-92 Dimension
Marking:
α2
A
B
1
2
B1426
3
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1426A3
CYStek Product Specification
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