NPC CF5027BT-4 Crystal oscillator module ic Datasheet

WF5027 series
Crystal Oscillator Module ICs
OVERVIEW
The WF5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with existing devices, and
significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package
options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
■
■
■
■
■
Wide range of operating supply voltage: 1.60 to 3.63V
Regulated voltage drive oscillator circuit for reduced
power consumption and crystal drive current
Optimized low crystal drive current oscillation for
miniature crystal units
3 pad layout options for mounting
• 5027A×, M×, Q× series: for Flip Chip Bonding
• 5027B×, N×, R× series: for Wire Bonding (type I)
• 5027C×, P×, S× series: for Wire Bonding (type II)
Recommended oscillation frequency range
For fundamental oscillator
• Low frequency version: 20MHz to 60MHz
• High frequency version: 60MHz to 100MHz
For 3rd overtone oscillator
• Low frequency version: 40MHz to 110MHz
• High frequency version*1: 110MHz to 180MHz
■
■
■
■
■
■
■
■
Multi-stage frequency divider for low-frequency
output support: 0.9MHz (min)
Frequency divider built-in (for fundamental oscillator)
• Selectable by version: fO, fO/2, fO/4, fO/8, fO/16,
fO/32, fO/64
−40 to 85°C operating temperature range
Standby function
• High impedance in standby mode, oscillator
stops
CMOS output duty level (1/2VDD)
50 ± 5% output duty
15pF output drive capability
Wafer form (WF5027××)
Chip form (CF5027××)
*1: under development
APPLICATIONS
■
3.2 × 2.5, 2.5 × 2.0, 2.0 × 1.6 size miniature crystal oscillator modules
ORDERING INFORMATION
Device
Package
WF5027××–4
Wafer form
CF5027××–4
Chip form
SEIKO NPC CORPORATION —1
WF5027 series
SERIES CONFIGURATION
For Fundamental Oscillator
Operating
Output drive
supply
capability
voltage range
[mA]
[V]
PAD layout
Flip Chip
Bonding
1.60 to 3.63
±4
Wire Bonding
Type I
Wire Bonding
Type II
Version*2
Recommended
oscillation
frequency range*1
[MHz]
fO
output
fO/2
output
fO/4
output
fO/8
output
fO/16
output
fO/32
output
fO/64
output
20 to 60
5027A1
5027A2
5027A3
5027A4
5027A5
5027A6
5027A7
60 to 100
5027AP
5027AQ
5027AR
5027AS
5027AT
5027AV
5027AW
20 to 60
5027B1
5027B2
5027B3
5027B4
5027B5
5027B6
5027B7
60 to 100
5027BP
5027BQ
5027BR
5027BS
5027BT
5027BV
5027BW
20 to 60
5027C1
5027C2
5027C3
5027C4
5027C5
5027C6
5027C7
60 to 100
5027CP
5027CQ
5027CR
5027CS
5027CT
5027CV
5027CW
*1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the
oscillation characteristics of components must be carefully evaluated.
*2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××.
For 3rd Overtone Oscillator
Operating
Output drive
supply
capability
voltage range
[mA]
[V]
1.60 to 3.63
±8
Recommended oscillation frequency range*1 [MHz] and version*2
PAD layout
40 to 50
50 to 65
65 to 85
85 to 110
110 to 145 145 to 180
Flip Chip Bonding
5027MA
5027MB
5027MC
5027MD
(5027QE)
(5027QF)
Wire Bonding Type I
5027NA
5027NB
5027NC
5027ND
(5027RE)
(5027RF)
Wire Bonding Type II
5027PA
5027PB
5027PC
5027PD
(5027SE)
(5027SF)
*1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the
oscillation characteristics of components must be carefully evaluated.
*2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××.
Versions in parentheses ( ) are under development.
VERSION NAME
Device
Package
WF5027××–4
Wafer form
Version name
WF5027
Form WF: Wafer form
CF: Chip (Die) form
CF5027××–4
Chip form
−4
Oscillation frequency range, frequency divider function
Pad layout type A, M, Q: for Flip Chip Bonding
B, N, R: for Wire Bonding (type I)
C, P, S: for Wire Bonding (type II)
SEIKO NPC CORPORATION —2
WF5027 series
PAD LAYOUT
(Unit: µm)
■
5027A×, M×, Q×
(for Flip Chip Bonding)
■
5027B×, N×, R×
(for Wire Bonding (type I))
(750,690)
VSS
5
4
Q
Y INHN
6
3
VDD
(0,0)
1
2
XT
XTN
■
5027C×, P×, S×
(for Wire Bonding (type II))
(750,690)
Y
Q
5
4
VSS
VDD
6
3
INHN
(0,0)
1
2
XTN
XT
(750,690)
VDD
5
4
Q
Y INHN
6
3
VSS
(0,0)
1
2
XT
XTN
X
X
X
Chip size: 0.75 × 0.69mm
Chip thickness: 130 ± 15µm
PAD size: 90µm
Chip base: VSS level
Chip size: 0.75 × 0.69mm
Chip thickness: 130 ± 15µm
PAD size: 90µm
Chip base: VSS level
Chip size: 0.75 × 0.69mm
Chip thickness: 130 ± 15µm
PAD size: 90µm
Chip base: VSS level
PAD DIMENSIONS
PIN DESCRIPTION
Pad dimensions [µm]
Pad No.
Pad No.
5027A× 5027B× 5027C×
5027M× 5027N× 5027P×
5027Q× 5027R× 5027S×
Pin
Name
Description
X
Y
1
229
114
1
2
1
XT
Amplifier input
2
520
114
2
1
2
XTN
Amplifier output
Crystal connection pins. Crystal is connected
between XT and XTN.
3
636
304
3
6
5
VDD
(+) supply voltage
–
4
636
531
4
5
4
Q
Output
Output frequency determined by internal circuit
to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32, fO/64
5
114
531
5
4
3
VSS
(–) ground
–
6
114
304
6
3
6
INHN
Output state
control input
High impedance when LOW (oscillator stops).
Power-saving pull-up resistor built-in.
BLOCK DIAGRAM
VDD VSS
INHN
VRG
RF
DIVIDER
CMOS
Q
XT
RD
CG
CD
XTN
SEIKO NPC CORPORATION —3
WF5027 series
VERSION DISCRIMINATION INTERNAL COMPONENTS
The WF5027 series device version is not determined solely by the mask pattern, but can also be determined by
the trimming of internal trimming fuses.
■
Version determined by laser trimming:
These chips are produced from a common device by the laser trimming of fuses corresponding to the ordered
version, shown in table 1. These devices are shipped for electrical characteristics testing. Laser-trimmed versions are identified externally by the combination of the version name marking (1) and the locations of
trimmed fuses (2).
■
Version determined by mask pattern:
These chips are fabricated using the mask corresponding to the ordered version, and do not require trimming.
Mask-fabricated versions are identified externally by the version name marking (1) only.
Since the WF5027 series devices are manufactured using 2 methods, there are 2 types of IC chip available
(identified externally) for the same version name. The identification markings for all WF5027 series device
versions is shown in table 2.
(750,690)
5027
(1) Version code on die
NPC
(2) Trimming fuses
F1
F2
F3
F4
F5
F6
F7
F8
F9
SEIKO NPC CORPORATION —4
WF5027 series
Table 1. Version and trimming fuses
(for fundamental oscillator)
■
5027×1 trimming fuses (untrimmed)
■
5027×2 trimming fuses (F1 link trimmed)
■
5027×3 trimming fuses (F2 link trimmed)
■
5027×4 trimming fuses (F1 and F2 links trimmed)
Trimming fuse number*1
Version
F1
F2
F3
F4
F5
5027×1
–
–
–
–
–
5027×2
×
–
–
–
–
5027×3
–
×
–
–
–
5027×4
×
×
–
–
–
5027×5
–
–
×
–
–
5027×6
×
–
×
–
–
5027×7
–
×
×
–
–
5027×P
–
–
–
×
×
5027×Q
×
–
–
×
×
5027×R
–
×
–
×
×
5027×S
×
×
–
×
×
5027×T
–
–
×
×
×
5027×V
×
–
×
×
×
5027×W
–
×
×
×
×
*1. –: untrimmed, ×: trimmed, F6 to F9 not used
: trimmed device
Table 2. Version and trimming fuses (for 3rd overtone oscillator)
Trimming fuse number*2
Recommended oscillation
frequency range*1 [MHz]
F1
F2
F3
F4
F5
F6
F7
F8
F9
5027×A
40 to 50
–
–
–
–
–
–
×
×
×
5027×B
50 to 65
–
×
–
–
–
–
–
×
×
5027×C
65 to 85
×
×
–
–
×
–
×
–
×
5027×D
85 to 110
–
×
×
×
×
–
×
–
×
5027×E
(110 to 145)
5027×F
(145 to 180)
Version
TBD
*1. Values in parentheses ( ) are provisional only.
*2. –: untrimmed, ×: trimmed
SEIKO NPC CORPORATION —5
WF5027 series
Table 3. Version identification by version name and chip markings (for fundamental oscillator)
Version set by trimming fuses
Version
name
Version code
on chip
Version set by mask pattern
Trimming fuses*1
F6
F7
F8
F9
Version code
on chip
F1
F2
F3
F4
F5
5027A1
AX
−
−
−
−
−
AX
5027A2
AX
×
−
−
−
−
A2
5027A3
AX
−
×
−
−
−
A3
5027A4
AX
×
×
−
−
−
A4
5027A5
AX
−
−
×
−
−
A5
5027A6
AX
×
−
×
−
−
A6
5027A7
AX
−
×
×
−
−
A7
5027AP
AX
−
−
−
×
×
AP
5027AQ
AX
×
−
−
×
×
AQ
5027AR
AX
−
×
−
×
×
AR
5027AS
AX
×
×
−
×
×
AS
5027AT
AX
−
−
×
×
×
AT
5027AV
AX
×
−
×
×
×
AV
5027AW
AX
−
×
×
×
×
AW
5027B1
BX
−
−
−
−
−
BX
5027B2
BX
×
−
−
−
−
B2
5027B3
BX
−
×
−
−
−
B3
5027B4
BX
×
×
−
−
−
B4
5027B5
BX
−
−
×
−
−
B5
5027B6
BX
×
−
×
−
−
B6
5027B7
BX
−
×
×
−
−
5027BP
BX
−
−
−
×
×
5027BQ
BX
×
−
−
×
×
BQ
5027BR
BX
−
×
−
×
×
BR
5027BS
BX
×
×
−
×
×
BS
Untrimmed
B7
BP
5027BT
BX
−
−
×
×
×
BT
5027BV
BX
×
−
×
×
×
BV
5027BW
BX
−
×
×
×
×
BW
5027C1
CX
−
−
−
−
−
CX
5027C2
CX
×
−
−
−
−
C2
5027C3
CX
−
×
−
−
−
C3
5027C4
CX
×
×
−
−
−
C4
5027C5
CX
−
−
×
−
−
C5
5027C6
CX
×
−
×
−
−
C6
5027C7
CX
−
×
×
−
−
C7
5027CP
CX
−
−
−
×
×
CP
5027CQ
CX
×
−
−
×
×
CQ
5027CR
CX
−
×
−
×
×
CR
5027CS
CX
×
×
−
×
×
CS
5027CT
CX
−
−
×
×
×
CT
5027CV
CX
×
−
×
×
×
CV
5027CW
CX
−
×
×
×
×
CW
Trimming
fuses
F1 to F9
Untrimmed
*1. −: untrimmed, ×: trimmed
SEIKO NPC CORPORATION —6
WF5027 series
Table 4. Version identification by version name and chip markings (for 3rd overtone oscillator)
Version set by trimming fuses
Version
name
Version set by mask pattern
Trimming fuses*1
Version code
on chip
Version code
on chip
F1
F2
F3
F4
F5
F6
F7
F8
F9
Trimming
fuses
F1 to F9
5027MA
MX
−
−
−
−
−
−
×
×
×
MA
5027MB
MX
−
×
−
−
−
−
−
×
×
MB
5027MC
MX
×
×
−
−
×
−
×
−
×
MC
5027MD
MX
−
×
×
×
×
−
×
−
×
MD
5027NA
NX
−
−
−
−
−
−
×
×
×
NA
5027NB
NX
−
×
−
−
−
−
−
×
×
NB
5027NC
NX
×
×
−
−
×
−
×
−
×
NC
5027ND
NX
−
×
×
×
×
−
×
−
×
ND
5027PA
PX
−
−
−
−
−
−
×
×
×
PA
5027PB
PX
−
×
−
−
−
−
−
×
×
PB
5027PC
PX
×
×
−
−
×
−
×
−
×
PC
5027PD
PX
−
×
×
×
×
−
×
−
×
PD
Untrimmed
(5027QE)
(5027QF)
(5027RE)
(5027RF)
TBD
(5027SE)
(5027SF)
*1. −: untrimmed, ×: trimmed
SEIKO NPC CORPORATION —7
WF5027 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0V
Parameter
Symbol
Condition
Rating
Unit
−0.5 to +4.0
V
Supply voltage range
VDD
Between VDD and VSS
Input voltage range
VIN
Input pins
−0.5 to VDD + 0.5
V
Output voltage range
VOUT
Output pins
−0.5 to VDD + 0.5
V
Storage temperature range
TSTG
Wafer form
−65 to +150
°C
Output current
IOUT
Q pin
± 20
mA
Recommended Operating Conditions
For Fundamental Oscillator
VSS = 0V
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Operating supply voltage
VDD
CL ≤ 15pF
1.60
–
3.63
V
Input voltage
VIN
Input pins
VSS
–
VDD
V
−40
–
+85
°C
5027×1 to 5027×7
20
–
60
MHz
5027×P to 5027×W
60
–
100
MHz
5027×1 to 5027×7
0.9
–
60
MHz
5027×P to 5027×W
0.9
–
100
MHz
Operating temperature
TOPR
Oscillation frequency*1
fO
Output frequency
fOUT
CL ≤ 15pF
*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency
range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation
characteristics of components must be carefully evaluated.
For 3rd Overtone Oscillator
VSS = 0V
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
Operating supply voltage
VDD
CL ≤ 15pF
1.60
–
3.63
V
Input voltage
VIN
Input pins
VSS
–
VDD
V
−40
–
+85
°C
5027×A
40
–
50
MHz
5027×B
50
–
65
MHz
5027×C
65
–
85
MHz
5027×D
85
–
110
MHz
Operating temperature
Oscillation frequency*1
TOPR
fO
*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency
range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation
characteristics of components must be carefully evaluated.
SEIKO NPC CORPORATION —8
WF5027 series
Electrical Characteristics
DC Characteristics
For Fundamental Oscillator: Low frequency version (5027×1 to 5027×7)
VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
VDD – 0.4
–
–
V
–
–
0.4
V
HIGH-level output voltage
VOH
Q: Measurement cct 3, IOH = – 4mA
LOW-level output voltage
VOL
Q: Measurement cct 3, IOL = 4mA
HIGH-level input voltage
VIH
INHN, Measurement cct 4
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN, Measurement cct 4
–
–
0.3VDD
V
VOH = VDD
–
10
µA
IZ
Q: Measurement cct 5,
INHN = LOW
–
Output leakage current
VOL = VSS
– 10
–
–
µA
VDD = 3.3V
–
1.6
2.4
mA
VDD = 2.5V
–
1.3
2.0
mA
VDD = 1.8V
–
1.0
1.5
mA
VDD = 3.3V
–
1.5
2.3
mA
VDD = 2.5V
–
1.2
1.8
mA
VDD = 1.8V
–
0.9
1.4
mA
VDD = 3.3V
–
1.3
2.0
mA
VDD = 2.5V
–
1.0
1.5
mA
VDD = 1.8V
–
0.8
1.2
mA
VDD = 3.3V
–
1.1
1.7
mA
VDD = 2.5V
–
0.9
1.4
mA
VDD = 1.8V
–
0.75
1.15
mA
VDD = 3.3V
–
1.05
1.6
mA
VDD = 2.5V
–
0.85
1.3
mA
VDD = 1.8V
–
0.7
1.1
mA
VDD = 3.3V
–
1.0
1.5
mA
VDD = 2.5V
–
0.85
1.3
mA
VDD = 1.8V
–
0.7
1.1
mA
VDD = 3.3V
–
1.0
1.5
mA
VDD = 2.5V
–
0.85
1.3
mA
VDD = 1.8V
–
0.7
1.1
mA
–
–
10
µA
0.4
1.5
8
MΩ
RUP2
30
70
150
kΩ
Rf
50
100
200
kΩ
4.8
6
7.2
pF
8
10
12
pF
5027×1 (fO), Measurement cct 1,
no load, INHN = open, fO = 48MHz,
fOUT = 48MHz
5027×2 (fO/2), Measurement cct 1,
no load, INHN = open, fO = 48MHz,
fOUT = 24MHz
5027×3 (fO/4), Measurement cct 1,
no load, INHN = open, fO = 48MHz,
fOUT = 12MHz
Current consumption*1
IDD
5027×4 (fO/8), Measurement cct 1,
no load, INHN = open, fO = 48MHz,
fOUT = 6MHz
5027×5 (fO/16), Measurement cct 1,
no load, INHN = open, fO = 48MHz,
fOUT = 3MHz
5027×6 (fO/32), Measurement cct 1,
no load, INHN = open, fO = 48MHz,
fOUT = 1.5MHz
5027×7 (fO/64), Measurement cct 1,
no load, INHN = open, fO = 60MHz,
fOUT = 0.94MHz
Standby current
INHN pull-up resistance
Oscillator feedback
resistance
Oscillator capacitance
IST
RUP1
CG
CD
Measurement cct 1, INHN = LOW
Measurement cct 6
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
*1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency.
IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3
SEIKO NPC CORPORATION —9
WF5027 series
For Fundamental Oscillator: High frequency version (5027×P to 5027×W)
VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
VDD – 0.4
–
–
V
–
–
0.4
V
HIGH-level output voltage
VOH
Q: Measurement cct 3, IOH = – 4mA
LOW-level output voltage
VOL
Q: Measurement cct 3, IOL = 4mA
HIGH-level input voltage
VIH
INHN, Measurement cct 4
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN, Measurement cct 4
–
–
0.3VDD
V
VOH = VDD
–
10
µA
IZ
Q: Measurement cct 5,
INHN = LOW
–
Output leakage current
VOL = VSS
– 10
–
–
µA
VDD = 3.3V
–
2.5
3.8
mA
VDD = 2.5V
–
2.0
3.0
mA
VDD = 1.8V
–
1.6
2.4
mA
VDD = 3.3V
–
2.4
3.6
mA
VDD = 2.5V
–
1.9
2.9
mA
VDD = 1.8V
–
1.5
2.3
mA
VDD = 3.3V
–
1.8
2.7
mA
VDD = 2.5V
–
1.5
2.3
mA
VDD = 1.8V
–
1.2
1.6
mA
VDD = 3.3V
–
1.7
2.6
mA
VDD = 2.5V
–
1.4
2.1
mA
VDD = 1.8V
–
1.1
1.7
mA
VDD = 3.3V
–
1.6
2.4
mA
VDD = 2.5V
–
1.3
2.0
mA
VDD = 1.8V
–
1.0
1.5
mA
VDD = 3.3V
–
1.5
2.3
mA
VDD = 2.5V
–
1.2
1.8
mA
VDD = 1.8V
–
1.0
1.5
mA
VDD = 3.3V
–
1.5
2.3
mA
VDD = 2.5V
–
1.2
1.8
mA
VDD = 1.8V
–
1.0
1.5
mA
–
–
10
µA
0.4
1.5
8
MΩ
RUP2
30
70
150
kΩ
Rf
50
100
200
kΩ
1.6
2
2.4
pF
3.2
4
4.8
pF
5027×P (fO), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 80MHz
5027×Q (fO/2), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 40MHz
5027×R (fO/4), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 20MHz
Current consumption*1
IDD
5027×S (fO/8), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 10MHz
5027×T (fO/16), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 5MHz
5027×V (fO/32), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 2.5MHz
5027×W (fO/64), Measurement cct 1,
no load, INHN = open, fO = 80MHz,
fOUT = 1.25MHz
Standby current
INHN pull-up resistance
Oscillator feedback
resistance
Oscillator capacitance
IST
RUP1
CG
CD
Measurement cct 1, INHN = LOW
Measurement cct 6
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
*1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency.
IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3
SEIKO NPC CORPORATION —10
WF5027 series
For 3rd Overtone Oscillator (5027×A to 5027×D)
VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
HIGH-level output voltage
LOW-level output voltage
Symbol
VOH
VOL
Condition
Unit
min
typ
max
Q: Measurement cct 3, IOH = – 8mA,
VDD = 2.25 to 3.63V
VDD – 0.4
–
–
V
Q: Measurement cct 3, IOH = – 4mA,
VDD = 1.60 to 2.25V
VDD – 0.4
–
–
V
Q: Measurement cct 3, IOL = 8mA,
VDD = 2.25 to 3.63V
–
–
0.4
V
Q: Measurement cct 3, IOL = 4mA,
VDD = 1.60 to 2.25V
–
–
0.4
V
HIGH-level input voltage
VIH
INHN, Measurement cct 4
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN, Measurement cct 4
–
–
0.3VDD
V
VOH = VDD
–
10
µA
IZ
Q: Measurement cct 5,
INHN = LOW
–
Output leakage current
VOL = VSS
– 10
–
–
µA
VDD = 3.3V
–
3.6
5.4
mA
VDD = 2.5V
–
3.0
4.5
mA
VDD = 1.8V
–
2.6
3.9
mA
VDD = 3.3V
–
3.8
5.7
mA
VDD = 2.5V
–
3.2
4.8
mA
VDD = 1.8V
–
2.8
4.2
mA
VDD = 3.3V
–
4.8
7.2
mA
VDD = 2.5V
–
4.0
6.0
mA
5027×A, Measurement cct 1,
no load, INHN = open, fO = 48MHz
5027×B, Measurement cct 1,
no load, INHN = open, fO = 54MHz
Current consumption*1
IDD
5027×C, Measurement cct 1,
no load, INHN = open, fO = 85MHz
5027×D, Measurement cct 1,
no load, INHN = open, fO = 100MHz
Standby current
INHN pull-up resistance
IST
RUP1
VDD = 1.8V
–
3.4
5.1
mA
VDD = 3.3V
–
5.3
8.0
mA
VDD = 2.5V
–
4.4
6.6
mA
VDD = 1.8V
–
3.6
5.4
mA
Measurement cct 1, INHN = LOW
–
–
10
µA
0.4
1.5
8
MΩ
30
70
150
kΩ
5027×A
2.6
3.8
5.0
kΩ
5027×B
2.2
3.2
4.2
kΩ
5027×C
1.9
2.8
3.7
kΩ
5027×D
1.9
2.8
3.7
kΩ
9.6
12
14.4
pF
Measurement cct 6
RUP2
Oscillator feedback
resistance
Rf
5027×A
CG
Design value (a monitor pattern on a
wafer is tested),
Excluding parasitic capacitance.
5027×B
6.4
8
9.6
pF
5027×C
4.8
6
7.2
pF
5027×D
1.6
2
2.4
pF
5027×A
9.6
12
14.4
pF
Oscillator capacitance
CD
Design value (a monitor pattern on a
wafer is tested),
Excluding parasitic capacitance.
5027×B
9.6
12
14.4
pF
5027×C
6.4
8
9.6
pF
5027×D
4.8
6
7.2
pF
*1. The consumption current IDD (CL) with a load capacitance (CL) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency.
IDD (CL) [mA] = IDD [mA] + CL [pF] × VDD [V] × fOUT [MHz] × 10–3
SEIKO NPC CORPORATION —11
WF5027 series
AC Characteristics
For Fundamental Oscillator (5027×1 to 5027×7, 5027×P to 5027×W)
VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
tr1
Output rise time
tr2
tf1
Output fall time
Rating
Condition
tf2
min
typ
max
Unit
Measurement cct 1, CL = 15pF,
0.1VDD to 0.9VDD
VDD = 2.25 to 3.36V
–
2.0
4.5
ns
VDD = 1.60 to 2.25V
–
3.0
5.0
ns
Measurement cct 1, CL = 15pF,
0.9VDD to 0.1VDD
VDD = 2.25 to 3.36V
–
2.0
4.5
ns
–
3.0
5.0
ns
Output duty cycle
Duty
Measurement cct 1, Ta = 25°C, CL = 15pF
VDD = 1.60 to 2.25V
45
50
55
%
Output disable delay time
tOD
Measurement cct 2, Ta = 25°C, CL ≤ 15pF
–
–
50
µs
For 3rd Overtone Oscillator (5027×A to 5027×D)
VDD = 1.60 to 3.63V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
tr1
Output rise time
tr2
tf1
Output fall time
Rating
Condition
tf2
min
typ
max
Unit
Measurement cct 1, CL = 15pF,
0.1VDD to 0.9VDD
VDD = 2.25 to 3.36V
–
1.2
3.0
ns
VDD = 1.60 to 2.25V
–
1.6
4.0
ns
Measurement cct 1, CL = 15pF,
0.9VDD to 0.1VDD
VDD = 2.25 to 3.36V
–
1.2
3.0
ns
–
1.6
4.0
ns
Output duty cycle
Duty
Measurement cct 1, Ta = 25°C, CL = 15pF
VDD = 1.60 to 2.25V
45
50
55
%
Output disable delay time
tOD
Measurement cct 2, Ta = 25°C, CL ≤ 15pF
–
–
50
µs
Timing chart
0.9VDD
Q
0.9VDD
TW
0.1VDD
DUTY measurement
voltage (0.5V DD )
0.1VDD
DUTY= TW/ T
T
tr
100 (%)
tf
Figure 1. Output switching waveform
INHN
VIH
VIL
tOD
tSTR
0.1V
Q
Normal
operation
Output
stopped
Hi-Z*
Normal
operation
When INHN goes HIGH to LOW, the Q output goes HIGH once and then becomes high impedance.
When INHN goes LOW to HIGH, the Q output goes from high impedance to normal output operation when the oscillation starts (oscillation is detected).
*) The high-impedance interval in the figure is shown as a LOW level due to the 1kΩ pull-down resistor connected to the Q pin (see "Measurement circuit
2" in the "Measurement Circuits" section).
Figure 2. Output disable and oscillation start timing chart
SEIKO NPC CORPORATION —12
WF5027 series
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the Q output becomes high impedance.
INHN
Q
Oscillator
HIGH (or open)
Frequency output
Normal operation
LOW
High impedance
Stopped
Power-saving Pull-up Resistor
The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level (HIGH or LOW). When
INHN is tied LOW level, the pull-up resistance is large (RUP1), reducing the current consumed by the resistance. When INHN is left open circuit, the pull-up resistance is small (RUP2), which increases the input susceptibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external
noise from unexpectedly stopping the output.
Oscillation Detector Function
The WF5027 series also feature an oscillation detector circuit. This circuit functions to disable the outputs until
the oscillator circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when power is applied or when INHN is switched.
SEIKO NPC CORPORATION —13
WF5027 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
Measurement parameter: IDD, IST, Duty, tr , tf
Measurement parameter: VIH, VIL
IDD
IST
A
VDD
VDD
XT
XT
X'tal
IDD: Open
X'tal
XTN
XTN
INHN VSS
INHN VSS
CL = 15pF
(Including probe
capacitance)
IDD: Open
IST: Short
Note: The AC characteristics are observed using an oscilloscope on
pin Q.
VIH
V
VIL
VIH: Voltage in VSS to VDD transition that changes the output state.
VIL: Voltage in VDD to VSS transition that changes the output state.
INHN has an oscillation stop function.
Measurement cct 2
Measurement cct 5
Measurement parameter: tOD
Measurement parameter: IZ
VDD
VDD
0.1µF
VDD
0.1µF
Q
C1
Signal
Generator
0.1µF
Q
Q
0.1µF
A
Q
or
VSS
XTN
CL
INHN VSS
RL
IZ
INHN VSS
R1
VDD
or
VSS
XTN input signal: 1Vp-p, sine wave
C1: 0.001µF
CL: 15pF
R1: 50Ω
RL: 1kΩ
Measurement cct 6
Measurement parameter: RUP1, RUP2
Measurement cct 3
Measurement parameter: VOH, VOL
VDD
0.1µF
0.1µF
VDD
INHN VSS
50Ω
Signal
Generator
Q
0.001µF
XTN
VOH
V
VOL
VSS
50Ω
∆V
VOH
VS
VS adjusted such that ∆V =
50 × IOH.
VS
VOL
VIN V
0.1µF
VS
A IUP
RUP1 =
VDD
IUP
(VIN = 0V)
RUP2 = VDD 0.7V DD (VIN = 0.7V DD)
IUP
∆V
VS adjusted such that ∆V =
50 × IOL.
XTN input signal: 1Vp-p, sine wave
SEIKO NPC CORPORATION —14
WF5027 series
TYPICAL PERFORMANCE (for fundamental oscillator)
The following characteristics measured using the crystal below. Note that the characteristics will vary with the
crystal used.
■
Crystal used for measurement
■
Parameter
fO = 48MHz
fO = 80MHz
C0 [pF]
1.6
2.1
R1 [Ω]
12
10
Crystal parameters
C1
L1
R1
C0
10
10
8
8
Current consumption [mA]
Current consumption [mA]
Current Consumption
6
4
CL = 15pF
2
6
CL = 15pF
4
2
CL = 0pF
CL = 0pF
0
0
1.5
2
3
2.5
3.5
1.5
4
2
3
2.5
3.5
4
VDD [V]
VDD [V]
5027A1, fOUT = 48MHz, Ta = 25°C
5027AP, fOUT = 80MHz, Ta = 25°C
Negative Resistance
Frequency [MHz]
10
0
20
30
40
Frequency [MHz]
50
60
0
60
70
80
90
100
–200
Negative resistance [Ω]
Negative resistance [Ω]
–200
50
–400
–600
–800
–400
C0 = 2pF
–600
C0 = 1pF
–800
C0 = 2pF
C0 = 0pF
C0 = 0pF
–1000
C0 = 1pF
5027×1 to ×7, VDD = 3.3V, Ta = 25°C
–1000
5027×P to ×W, VDD = 3.3V, Ta = 25°C
Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the
XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig
and measurement conditions.
SEIKO NPC CORPORATION —15
WF5027 series
1
1
0.5
0.5
∆f/f [ppm]
∆f/f [ppm]
Frequency Deviation by Supply Voltage Change
0
0
–0.5
–0.5
–1
1.6
–1
1.6
2.1
2.6
VDD [V]
3.1
3.6
2.1
2.6
VDD [V]
3.1
3.6
5027×P to ×W, fOUT = 80MHz,
3.3V standard, Ta = 25°C
5027×1 to ×7, fOUT = 48MHz,
3.3V standard, Ta = 25°C
50
50
40
40
Drive level [µW]
Drive level [µW]
Drive Level
30
20
30
20
10
10
0
0
1.5
2
3
2.5
3.5
4
1.5
2
3
2.5
VDD [V]
3.5
4
VDD [V]
5027×1 to ×7, fOUT = 48MHz, Ta = 25°C
5027×P to ×W, fOUT = 80MHz, Ta = 25°C
Phase Noise
–40
–40
–60
–60
Phase noise [dBc/Hz]
Phase noise [dBc/Hz]
Measurement equipment: Agilent E5052 Signal Source Analyzer
–80
–100
–120
–100
–120
–140
–140
–160
–80
10
100
1,000
10,000
100,000
1,000,000 10,000,000
Offset frequency [Hz]
5027A1, VDD = 3.3V, fOSC = fOUT = 48MHz,
Ta = 25°C
–160
10
100
1,000
10,000
100,000
1,000,000 10,000,000
Offset frequency [Hz]
5027AP, VDD = 3.3V, fOSC = fOUT = 80MHz,
Ta = 25°C
SEIKO NPC CORPORATION —16
WF5027 series
Output Waveform
Measurement equipment: Agilent 54855A Oscilloscope
5027A1, VDD = 3.3V, fOUT = 48MHz,
CL = 15pF, Ta = 25°C
5027AP, VDD = 3.3V, fOUT = 80MHz,
CL = 15pF, Ta = 25°C
SEIKO NPC CORPORATION —17
WF5027 series
TYPICAL PERFORMANCE (for 3rd overtone oscillator)
The following characteristics measured using the crystal below. Note that the characteristics will vary with the
crystal used.
■
Crystal used for measurement
■
Parameter
fO = 85MHz
fO = 100MHz
C0 [pF]
0.9
1.2
R1 [Ω]
56
45
Crystal parameters
L1
C1
R1
C0
12
12
10
10
Current consumption [mA]
Current consumption [mA]
Current Consumption
8
CL = 15pF
6
4
CL = 0pF
8
CL = 15pF
6
4
CL = 0pF
2
2
0
1.6
2.2
3.4
2.8
VDD [V]
0
1.6
4
5027×D, fOUT = 85MHz, Ta = 25°C
2.2
2.8
VDD [V]
3.4
4
5027AP, fOUT = 100MHz, Ta = 25°C
Negative Resistance
0
0
40
Frequency [MHz]
80
120
160
200
Negative resistance [Ω]
C0 = 2pF
–200
–400
1.8V
2.5V
3.3V
1.8V
2.5V
3.3V
1.8V
2.5V
3.3V
C0 = 1pF
C0 = 0pF
–600
–800
–1000
1.8V
2.5V
3.3V
5027×D, Ta = 25°C, recommended operating frequency
range: 85MHz to 110MHz
Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the
XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig
and measurement conditions.
SEIKO NPC CORPORATION —18
WF5027 series
1
1
0.5
0.5
∆f/f [ppm]
∆f/f [ppm]
Frequency Deviation by Supply Voltage Change
0
0
–0.5
–0.5
–1
–1
1.6
2.1
2.6
VDD [V]
3.1
1.6
3.6
5027×D, fOUT = 85MHz, 3.3V standard, Ta = 25°C
2.6
VDD [V]
2.1
3.1
3.6
5027×D, fOUT = 100MHz, 3.3V standard, Ta = 25°C
200
200
150
150
Drive level [µW]
Drive level [µW]
Drive Level
100
50
0
100
50
1.5
2
3
2.5
3.5
0
4
1.5
2
3
2.5
3.5
4
VDD [V]
VDD [V]
5027×D, fOUT = 85MHz, Ta = 25°C
5027×D, fOUT = 100MHz, Ta = 25°C
Phase Noise
–40
–40
–60
–60
Phase noise [dBc/Hz]
Phase noise [dBc/Hz]
Measurement equipment: Agilent E5052 Signal Source Analyzer
–80
–100
–120
–100
–120
–140
–140
–160
–80
–160
10
100
1,000
10,000
100,000
1,000,000 10,000,000
Offset frequency [Hz]
5027×D, VDD = 3.3V, fOSC = fOUT = 85MHz,
Ta = 25°C
10
100
1,000
10,000
100,000
1,000,000 10,000,000
Offset frequency [Hz]
5027×D, VDD = 3.3V, fOSC = fOUT = 100MHz,
Ta = 25°C
SEIKO NPC CORPORATION —19
WF5027 series
Output Waveform
Measurement equipment: Agilent 54855A Oscilloscope
5027×D, VDD = 3.3V, fOUT = 85MHz,
CL = 15pF, Ta = 25°C
5027×D, VDD = 3.3V, fOUT = 100MHz,
CL = 15pF, Ta = 25°C
SEIKO NPC CORPORATION —20
WF5027 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: [email protected]
NC0505CE
2007.03
SEIKO NPC CORPORATION —21
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