RFM03U3CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM03U3CT VHF- and UHF-band Amplifier Applications Unit: mm (Note) The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. • Output power: PO = 3 W (typ.) • Gain: GP = 15 dB (typ.) • Drain efficiency: ηD = 60% (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 16 V Gate-source voltage VGSS 3 V ID 2.5 A PD (Note 1) 7 W Channel temperature Tch 150 °C Storage temperature range Tstg −45 to 150 °C Drain current Power dissipation RF-CST3 Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3W1A operating temperature/current/voltage, etc.) are within the Weight: 12 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) Marking (top view) Pin 1 marking 2 1 03U3 ** 3 Product name Lot No. 1. Gate 2. Source (heat sink) 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. 1 2009-08-24 RFM03U3CT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = 10 V, VGS = 0 V ⎯ ⎯ 10 μA Gate-source leakage current IGSS VGS = 3 V ⎯ ⎯ 5 μA 1.1 V Threshold voltage Vth VDS = 3.6 V, ID = 0.1 mA 0.1 0.6 Output power PO 3.0 ⎯ W ηD 50 60 ⎯ % Power gain GP VDS = 3.6 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 0.1 W, ZG = ZL = 50 Ω 2.3 Drain efficiency 13.6 14.8 ⎯ dB VDS = 3.6 V, PO = 3 W (Pi = adjust), Iidle = 500 mA (VGS = adjust), f = 520 MHz, VSWR LOAD 20:1 all phase ⎯ Load mismatch No degradation ⎯ Note 2: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 520 MHz, VDS = 3.6 V, Iidle = 500 mA, Pi = 0.1 W) C8 C7 Pi ZG = 50 Ω C1 R1 C2 C9 PO C4 C3 L1 C10 L2 C12 C5 C6 ZL = 50 Ω C13 VDS C11 VGS C1: 27 pF C2: 9 pF C3: 2 pF C4: 33 pF C5: 9 pF C6: 17 pF C7: 10000 pF C8: 10000 pF C9: 1000 pF C10: 10000 pF C11: 4.7 μF C12: 10000 pF C13: 4.7 μF R1: 120 Ω 2 L1: 27 μH L2: φ0.6 mm enamel wire, 5.8ID, 7T 2009-08-24 RFM03U3CT Po -Pi nD -Pi 5 80 f =520MHz Iidle=500mA 4.5 f =520MHz Iidle=500mA 70 60 3.5 Drain effcieny hD(%) OUTPUT POWER Po(W) 4 3 2.5 2 1.5 Vds=4.5V 1 50 40 30 20 Vds=4.5V Vds=3.6V 0.5 Vds=3.0V 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 Vds=3.6V 10 Vds=3.0V 0 0.4 0 INPUT POWER Pi(W) 0.05 0.1 0.15 Po -Pi 0.25 80 3 70 2.5 60 2 1.5 1 Iidle=500mA 40 30 Iidle=750mA Iidle=500mA Iidle=250mA 0 0.1 0.15 0.2 0.4 50 10 Iidle=250mA 0.05 0.35 f =520MHz Vds=3.6V 20 Iidle=750mA 0.5 0 0.3 nD -Pi f =520MHz Vds=3.6V Drain effcieny hD(%) OUTPUT POWER Po(W) 3.5 0.2 INPUT POWER Pi(W) 0.25 0.3 0.35 0 0.4 0 INPUT POWER Pi(W) 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 INPUT POWER Pi(W) Note 3:These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2009-08-24 RFM03U3CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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