Ordering number : ENA1430B ECH8310 P-Channel Power MOSFET –30V, –9A, 17mΩ, Single ECH8 http://onsemi.com Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V V Drain Current (DC) ID --9 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --60 A Allowable Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8310-TL-H Top View 0.25 2.9 8 Packing Type : TL Marking 0.15 5 JM 2.3 Lot No. TL 4 1 0.65 0.3 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 8 7 6 5 1 2 3 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5 ECH8310 Electrical Characteristics at Ta=25°C Parameter Symbol Zero-Gate Voltage Drain Current Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Gate-to-Source Leakage Current Cutoff Voltage Conditions Ratings min typ --30 IGSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VGS(off) VDS=--10V, ID=--1mA --1.2 Forward Transfer Admittance | yfs | VDS=--10V, ID=--4.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--4.5A, VGS=--10V ID=--2A, VGS=--4.5V RDS(on)3 ID=--2A, VGS=--4.0V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Unit max V --1 mA ±10 mA --2.6 12 9 13 17 12 20 28 23 32.5 13.5 V S 1400 mW mW mW pF 350 pF Crss 250 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 45 ns Turn-OFF Delay Time td(off) 134 ns Fall Time tf 87 ns Total Gate Charge Qg 28 nC Gate-to-Source Charge Qgs 4 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--9A 6 IS=--9A, VGS=0V --0.8 nC --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --4.5A RL=3.3Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8310 P.G 50Ω S Ordering Information Device ECH8310-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1430-2/5 ECH8310 --4.0 V V --3.5 V --7 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 RDS(on) -- VGS --4.5A 50 40 30 20 10 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 3 2 C 75° °C 25 1.0 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 2 5 tr td(on) 10 --3.5 IT14478 10 5 --40 --20 0 20 40 60 80 100 120 140 160 IT14480 IS -- VSD VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Ciss, Coss, Crss -- VDS --1.0 IT14482 f=1MHz 3 7 2 15 5 tf 3 20 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V td(off) 100 25 IT14481 SW Time -- ID 3 5 7 --10 --3.0 2.0A = -I D , 4.0V .0A = -= --2 I VGS D , .5V = --4 VGS 4.5A I D= -, V 0 . = --10 VGS --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF 0.1 7 --0.01 30 2 Source Current, IS -- A 5°C --2 = Ta --2.5 Ambient Temperature, Ta -- °C 2 10 7 5 --2.0 35 0 --60 --16 VDS= --10V 3 --1.5 RDS(on) -- Ta IT14479 | yfs | -- ID 5 --1.0 40 ID= --2A 0 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 60 0 IT15075 70 0 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 --0.9 C --0.1 5°C 0 --25°C --1 25° C --1 Ta=7 5°C --2 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S --3 --2 0 Switching Time, SW Time -- ns --4 --25 ° --3 --5 C --4 --6 25° 2.5V V GS= -- Ta= 7 --5 Drain Current, ID -- A --6 VDS= --10V --8 --6.0 V Drain Current, ID -- A --7 ID -- VGS --9 --4.5 --8 ID -- VDS --10.0V--8.0V --9 2 Ciss 1000 7 5 Coss Crss 3 2 7 5 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 IT14483 100 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14484 No. A1430-3/5 ECH8310 VGS -- Qg VDS= --15V ID= --9A --8 --6 --4 --2 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 ASO 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 30 IT14485 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 IDP= --60A PW≤10μs 1m 10 ID= --9A DC 10 ms s 0m op era Operation in this area is limited by RDS(on). tio s n( Ta =2 5° C) --0.1 7 5 Ta=25°C 3 2 Single pulse 2 --0.01 When mounted on ceramic substrate (900mm ×0.8mm) --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 Drain-to-Source Voltage, VDS -- V IT14500 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14486 No. A1430-4/5 ECH8310 Outline Drawing ECH8310-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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