PHILIPS BFT92W Pnp 4 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92W
PNP 4 GHz wideband transistor
Product specification
May 1994
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
FEATURES
DESCRIPTION
 High power gain
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
 Gold metallization ensures
excellent reliability
 SOT323 (S-mini) package.
PINNING
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
3
handbook, 2 columns
1
PIN
DESCRIPTION
1
base
2
emitter
3
collector
2
Top view
MBC870
Marking code: W1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


20
V
VCEO
collector-emitter voltage
open base


15
V
IC
collector current (DC)


35
mA
Ptot
total power dissipation
up to Ts = 93 C; note 1


300
mW
hFE
DC current gain
IC = 15 mA; VCE = 10 V
20
50

Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz

0.5

pF
fT
transition frequency
IC = 15 mA; VCE = 10 V;
f = 500 MHz

4

GHz
GUM
maximum unilateral power gain IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C

17

dB
F
noise figure

2.5

dB
Tj
junction temperature


150
C
IC = 5 mA; VCE = 10 V;
f = 500 MHz
Note
1. Ts is the temperature at the soldering point of the collector pin.
May 1994
2
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCEO
collector-emitter voltage
open base

15
V
VEBO
emitter-base voltage
open collector

2
V
IC
collector current (DC)

25
mA
Ptot
total power dissipation

300
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature

150
C
up to Ts = 93 C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
up to Ts = 93 C; note 1
VALUE
UNIT
190
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V


50
hFE
DC current gain
IC = 15 mA; VCE = 10 V
20
50

fT
transition frequency
IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C

4

GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz

0.65

pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz

0.75

pF
Cre
feedback capacitance
IC = 0; VCB = 10 V;
f = 1 MHz

0.5

pF
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C

17

dB
IC = 15 mA; VCE = 10 V;
f = 1 GHz; Tamb = 25 C

11

dB
s = opt; IC = 5 mA;
VCE = 10 V; f = 500 MHz

2.5

dB
s = opt; IC = 5 mA;
VCE = 10 V; f = 1 GHz

3

dB
F
noise figure
Note
nA
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------- 1 – s 11 2   1 – s 22 2 
May 1994
3
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
MLB540
400
MLB541
60
P tot
(mW)
h FE
300
40
200
20
100
0
0
0
50
100
150
Ts
0
200
( o C)
10
20
30
I C (mA)
VCE = 10 V; Tj = 25 C.
Fig.3
DC current gain as a function of collector
current, typical values.
Fig.2 Power derating curve.
MLB542
1
6
C re
(pF)
0.8
fT
(GHz)
MLB543
V CE =
10 V
4
0.6
5V
0.4
2
0.2
0
0
0
4
8
12
16
20
VCB (V)
1
May 1994
I C (mA)
10 2
f = 500 MHz; Tamb = 25 C.
IC = 0; f = 1 MHz.
Fig.4
10
Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5
4
Transition frequency as a function of
collector current, typical values.
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
MLB544
30
gain
gain
(dB)
(dB)
20
MLB545
30
20
MSG
G UM
MSG
10
0
G UM
10
0
10
20
0
30
0
10
20
I C (mA)
f = 500 MHz; VCE = 10 V.
MSG = maximum stable gain.
Fig.6
30
I C (mA)
f = 1 GHz; VCE = 10 V.
MSG = maximum stable gain.
Gain as a function of collector current,
typical values.
Fig.7
MLB546
50
Gain as a function of collector current,
typical values.
MLB547
50
gain
gain
(dB)
(dB)
40
40
G UM
G UM
MSG
30
30
MSG
20
20
10
10
G max
G max
0
0
10
10
2
10
3
f (MHz)
10
4
10
IC = 5 mA; VCE = 10 V.
MSG = maximum stable gain.
Fig.8
May 1994
10
2
10
3
f (MHz)
10
IC = 15 mA; VCE = 10 V.
MSG = maximum stable gain.
Gain as a function of frequency,
typical values.
Fig.9
5
Gain as a function of frequency,
typical values.
4
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MLB548
1.0
90 o
VCE = 10 V; IC = 15 mA.
Fig.10 Common emitter input reflection coefficient (s11), typical values.
90 o
135 o
180 o
45 o
40 MHz
50
40
30
20
0o
3 GHz
10
135 o
45 o
90 o
MLB549
VCE = 10 V; IC = 15 mA.
Fig.11 Common emitter forward transmission coefficient (s21), typical values.
May 1994
6
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
90 o
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
0o
40 MHz
135 o
45 o
90 o
MLB550
VCE = 10 V; IC = 15 mA.
Fig.12 Common emitter reverse transmission coefficient (s12), typical values.
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
0.2
5
3 GHz
0.5
2
135 o
45 o
1
MLB551
1.0
90 o
VCE = 10 V; IC = 15 mA.
Fig.13 Common emitter output reflection coefficient (s22), typical values.
May 1994
7
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
MLB552
6
MLB553
6
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
1 GHz
4
500 MHz
IC =
15 mA
4
10 mA
5 mA
2 mA
2
2
0
1
10
I C (mA)
0
10 2
10 2
VCE = 10 V.
f (MHz)
10 4
VCE = 10 V.
Fig.14 Minimum noise figure as a function of
collector current, typical values.
May 1994
10 3
Fig.15 Minimum noise figure as a function of
frequency, typical values.
8
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
F min = 2.5 dB
0.2
Γ opt
180 o
0.2
0
0.5
1
2
5
0o
0
F = 3 dB
5
0.2
F = 4 dB
F = 5 dB
0.5
2
135 o
45 o
1
MLB554
1.0
90 o
f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 .
Fig.16 Common emitter noise figure circles, typical values.
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
F min = 3 dB
0.2
0.4
5
Γ opt
180 o
0.2
0
0.5
1
0.2
2
5
0o
F = 3.5 dB
0
F = 4 dB
0.2
5
F = 5 dB
0.5
2
135 o
45 o
1
MLB555
90 o
f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 .
Fig.17 Common emitter noise figure circles, typical values.
May 1994
9
1.0
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
SPICE parameters for the BFT92W crystal
SEQUENCE No. PARAMETER
VALUE
SEQUENCE No. PARAMETER
UNIT
VALUE
UNIT
1
IS
437.5
aA
36(1)
VJS
750.0
mV
2
BF
33.58

37(1)
MJS
0.000

3
NF
1.009

38
FC
0.768

4
VAF
23.39
V
Note
5
IKF
99.53
mA
6
ISE
87.05
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
1.943

8
BR
4.947

9
NR
1.002

10
VAR
3.903
V
11
IKR
5.281
mA
12
ISC
35.88
fA
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
C
13
NC
1.393

14
RB
5.000

15
IRB
1.000
A
16
RBM
5.000

17
RE
1.000

18
RC
10.00

19(1)
XTB
0.000

20(1)
EG
1.110
eV
21(1)
XTI
3.000

22
CJE
746.6
fF
23
VJE
600.0
mV
24
MJE
0.357

25
TF
17.49
ps
26
XTF
1.354

27
VTF
155.6
mV
28
ITF
1.000
mA
Cbe
2
fF
29
PTF
45.00
deg
Ccb
100
fF
Cce
100
fF
E'
C be
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc);
fc = scaling frequency = 1 GHz.
Fig.18 Package equivalent circuit SOT323.
List of components (see Fig.18)
DESIGNATION
VALUE
UNIT
30
CJC
937.1
fF
31
VJC
396.4
mV
L1
0.34
nH
32
MJC
0.200

L2
0.10
nH
33
XCJC
0.106

L3
0.34
nH
34
TR
8.422
ns
LB
0.60
nH
35(1)
CJS
0.000
F
LE
0.60
nH
May 1994
10
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
May 1994
REFERENCES
IEC
JEDEC
JEITA
SC-70
11
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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May 1994
12
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT92W
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Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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May 1994
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Printed in The Netherlands
R77/01/pp14
Date of release: May 1994
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