GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Symbol Rating Unit VCES 600 V V VGES ±20 DC IC 30 1 ms ICP 60 DC IF 30 1 ms IFM 60 Collector power dissipation (Tc = 25°C) PC 170 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Collector current Emitter-collector forward current Storage temperature range A A JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.735 °C/W Thermal resistance (diode) Rth (j-c) 1.90 °C/W Equivalent Circuit Marking Collector TOSHIBA GT30J324 Gate Emitter Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT30J324 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 3 mA, VCE = 5 V 3.5 ― 6.5 V VCE (sat) IC = 30 A, VGE = 15 V ― 2.0 2.45 V VCE = 10 V, VGE = 0, f = 1 MHz ― 4650 ― pF td (on) ― 0.09 ― tr ― 0.07 ― Inductive Load ― 0.24 ― VCC = 300 V, IC = 30 A ― 0.30 ― ― 0.05 ― ― 0.43 ― Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Turn-on delay time Rise time Switching time Turn-on time ton Turn-off delay time td (off) Fall time Switching loss tf VGG = +15 V, RG = 24 Ω (Note 1) Turn-off time toff Turn-on switching loss Eon ― 1.00 ― Turn-off switching loss Eoff ― 0.80 ― (Note 2) μs mJ Peak forward voltage VF IF = 30 A, VGE = 0 ― ― 3.8 V Reverse recovery time trr IF = 30 A, di/dt = −100 A/μs ― 60 ― ns Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 −VGE IC L IC VCC 90% 90% RG VCE 0 VCE 10% 10% 10% 10% td (on) td (off) tf toff tr ton Note 2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 5% VCE Eoff Eon 2 2006-11-01 GT30J324 IC – VCE VCE – VGE 20 60 Common emitter Common emitter 20 15 40 9 Collector-emitter voltage Collector current IC (A) 50 Tc = 25°C VCE (V) 10 30 20 VGE = 8 V 10 0 0 1 2 3 Collector-emitter voltage 4 Tc = −40°C 16 12 8 60 30 4 IC = 10 A 0 0 5 VCE (V) 4 8 12 Gate-emitter voltage VCE – VGE 16 VGE (V) VCE – VGE 20 20 VCE (V) Common emitter Tc = 25°C 16 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter 12 8 30 60 4 IC = 10 A 0 0 4 8 12 Gate-emitter voltage 16 Tc = 125°C 16 12 8 30 60 4 IC = 10 A 0 0 20 VGE (V) 4 8 12 Gate-emitter voltage IC – VGE 16 20 VGE (V) VCE (sat) – Tc 60 4 Common emitter Collector-emitter saturation voltage VCE (sat) (V) Common emitter (A) 50 VCE = 5 V Collector current IC 20 40 30 20 25 10 Tc = 125°C 0 0 4 VGE = 15 V 60 3 30 2 IC = 10 A 1 −40 8 Gate-emitter voltage 12 16 0 −60 20 VGE (V) −20 20 60 100 140 Case temperature Tc (°C) 3 2006-11-01 GT30J324 Switching time 1 (μs) 0.3 ton 0.1 td (on) tr 0.03 0.01 1 3 10 30 100 Gate resistance Switching time 1 0.3 10 30 100 300 15 20 25 30 (A) toff, tf, td (off) – IC 3 1 toff 0.3 td (off) tf 0.1 0.03 5 10 15 20 Collector current IC Switching loss Eon, Eoff – RG 25 30 (A) Eon, Eoff – IC 3 Eon 1 Eoff 0.3 10 10 Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) (Ω) Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25°C : Tc = 125°C (Note 2) 3 5 0.01 0 1000 Switching loss Eon, Eoff (mJ) RG 3 0.1 1 tr Switching time tf Switching loss 10 0.03 10 Gate resistance 30 td (on) toff, tf, td (off) – RG toff td (off) 3 ton 0.1 Collector current IC 0.1 0.01 1 0.3 (Ω) Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25°C : Tc = 125°C (Note 1) 0.03 1 ton, tr, td (on) – IC Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) 0.01 0 1000 (μs) 3 RG 300 Switching time toff, tf, td (off) Switching time toff, tf, td (off) (μs) 10 Switching loss Switching time 3 Eon, Eoff (mJ) Switching time ton, tr, td (on) 3 ton, tr, td (on) – RG Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25°C : Tc = 125°C (Note 1) Switching time ton, tr, td (on) (μs) 10 30 Gate resistance 100 RG 300 0.3 Eoff 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 2) 0.03 0.01 0 1000 Eon 1 5 10 15 20 Collector current IC (Ω) 4 25 30 (A) 2006-11-01 GT30J324 VCE, VGE – QG Collector-emitter voltage (pF) 1000 300 100 Common emitter Coes VGE = 0 30 f = 1 MHz Cres 400 20 Common emitter RL = 10 Ω Tc = 25°C 300 16 12 200 300 200 8 VCE = 100 V 100 4 VGE (V) Cies 3000 Capacitance C VCE (V) 500 Gate-emitter voltage C – VCE 10000 Tc = 25°C 10 0.1 0.3 1 3 10 30 Collector-emitter voltage 100 300 0 0 1000 40 VCE (V) 80 120 0 200 160 Gate charge QG (nC) trr, Irr – IF IF – V F 60 10 1000 Forward current IF 40 30 20 25 Tc = 125°C 10 (ns) Irr 3 300 1 100 trr Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C 0.3 −40 0 0 0.6 1.2 1.8 2.4 Forward voltage VF 3.0 0.1 0 3.6 5 10 30 IC max (pulsed)* 1000 (A) (A) Collector current IC Collector current IC 300 30 DC operation 3 1 ms* *: Single pulse Tc = 25°C Curves must be derated linearly 0.3 with increase in temperature. 10 3 1 0.3 10 ms* 10 (A) 50 μs* IC max (continuous) 3 10 30 Reverse Bias SOA 10 0.1 1 25 100 100 μs* 1 20 Forward current IF (V) Safe Operating Area 100 15 30 trr (A) 50 VGE = 0 Reverse recovery time Reverse recovery current Irr (A) Common collector 30 Collector-emitter voltage 100 300 0.1 1 1000 VCE (V) Tj ≤ 125°C VGE = 15 V RG = 24 Ω 3 10 30 Collector-emitter voltage 5 100 VCE (V) 2006-11-01 Transient thermal resistance rth (t) (°C/W) GT30J324 rth (t) – tw 102 10 1 FRD 100 IGBT 10 −1 10−2 10−3 10−4 10−5 Tc = 25°C 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 101 102 (s) 6 2006-11-01 GT30J324 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-01