Semicoa AS6UA5128 2.3v to 3.6v 512kã 8 intelliwatt low-power cmos sram Datasheet

October 2000
AS6UA5128
®
2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM
Features
• AS6UA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.6V at 55 ns
• 2.3V to 2.7V at 70 ns
• Low power consumption: ACTIVE
- 144 mW at 3.6V and 55 ns
- 68 mW at 2.7V and 70 ns
- 41 µW max at 2.7V
- 28 µW max at 2.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on
Alliance AS6UB5128 product family (available January
2001)
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
• Low power consumption: STANDBY
- 72 µW max at 3.6V
Logic block diagram
Pin arrangement
VCC
36(48)-CSP BGA Package (shading indicates no ball)
GND
512K×8
Array
(4,194,304)
Sense amp
A0
A1
A2
A3
A4
A5
A6
A7
A8
Row decoder
Input buffer
I/O8
I/O1
Control
circuit
1
A0
I/O5
I/O6
VSS
VCC
I/O7
I/O8
A9
2
A1
A2
3
NC
WE
NC
A18
OE
CS
A10
A11
4
A3
A4
A5
A17
A16
A12
5
A6
A7
A15
A13
6
A8
I/O1
I/O2
VCC
VSS
I/O3
I/O4
A14
WE
OE
CS
A9
A10
A11
A12
A13
A14
A15
A16
Column decoder
A
B
C
D
E
F
G
H
Selection guide
Product
AS6UA5128
AS6UA5128
10/6/00
Min
(V)
2.7
2.3
VCC Range
Typ2
(V)
3.0
2.5
Max
(V)
3.6
2.7
Speed
(ns)
55
70
ALLIANCE SEMICONDUCTOR
Power Dissipation
Standby (ISB1)
Operating (ICC)
Max (mA)
Max (µA)
2
20
1
15
1
Copyright ©2000 Alliance Semiconductor. All rights reserved.
AS6UA5128
®
Functional description
The AS6UA5128 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words × 8 bits. It is designed for memory applications where slow data access, low power, and simple interfacing
are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 55/70ns are ideal for low-power applications. Active high and low
chip selects (CS) permit easy memory expansion with multiple-bank memory systems.
When CS is high, the device enters standby mode: the AS6UA5128 is guaranteed not to exceed 72 µW power consumption
at 3.6V and 55 ns; 41 µW at 2.7V and 70 ns; or 28 µW at 2.3V and 100 ns. The device also returns data when VCC is
reduced to 1.5V for even lower power consumption.
A write cycle is accomplished by asserting write enable ( WE) and chip select (CS) low. Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CS (write cycle 2). To avoid bus contention, external devices should drive
I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE), chip select (CS), with write enable (WE) High. The chip
drives I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are CMOS-compatible, and operation is from a single 2.3V to 3.6V supply. The device is
available in the JEDEC standard 36(48)-ball FBGA package.
Absolute maximum ratings
Parameter
Device
Symbol
Min
Max
Unit
Voltage on VCC relative to V SS
VtIN
–0.5
VCC + 0.5
V
Voltage on any I/O pin relative to GND
VtI/O
–0.5
Power dissipation
PD
–
1.0
W
Storage temperature (plastic)
Tstg
–65
+150
°C
Temperature with VCC applied
Tbias
–55
+125
°C
DC output current (low)
IOUT
–
20
mA
V
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this spec ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CS
WE
OE
H
X
X
L
X
X
L
H
L
L
Supply Current
I/O1–I/O8
Mode
ISB
High Z
Standby (ISB)
H
ICC
High Z
Output disable (ICC)
H
L
ICC
DOUT
Read (ICC)
L
X
ICC
DIN
Write (ICC)
Key: X = Don’t care, L = Low, H = High.
2
ALLIANCE SEMICONDUCTOR
10/6/00
AS6UA5128
®
Recommended operating condition (over the operating range)
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
Test Conditions
Min
Max
IOH = –2.1mA
VCC = 2.7V
2.4
IOH = –0.5mA
VCC = 2.3V
2.0
IOL = 2.1mA
VCC = 2.7V
0.4
IOL = 0.5mA
VCC = 2.3V
0.4
Unit
V
V
VCC = 2.7V
2.2
VCC + 0.5
VCC = 2.3V
2.0
VCC + 0.3
VCC = 2.7V
–0.5
0.8
VCC = 2.3V
–0.3
0.6
V
V
IIX
Input Load Current
GND < VIN < VCC
–1
+1
µA
IOZ
Output Load Current
GND < VO < VCC; Outputs High Z
–1
+1
µA
ICC
VCC Operating Supply
Current
CS = VIL,
IOUT = 0mA, f = 0,
VIN = VIL or VIH
ICC1 @
1 MHz
Average VCC Operating
Supply Current at 1
MHz
CS < 0.2V, VIN < 0.2V,
or VIN > VCC – 0.2V,
f = 1 mS
ICC2
Average VCC Operating
Supply Current
CS ≠ VIL , VIN = VIL or
VIH, f = f Max
ISB
CS Power Down
Current; TTL Inputs
CS > VIH , other inputs = 0V
– VCC
ISB1
CS Power Down
Current; CMOS Inputs
CS > VCC – 0.2V > VCC – 0.2V,
other inputs = 0V – VCC, f =
fMax
ISBDR
Data Retention
CS > VCC – 0.1V,
VCC – 0.1V, f = 0
VCC = 3.6V
2
VCC = 2.7V
1
VCC = 3.6V
5
VCC = 2.7V
4
VCC = 3.6V (55/70 ns)
40/30
VCC = 2.7V (70 ns)
25
mA
mA
mA
VCC = 3.6V
100
µA
VCC = 2.7V
VCC = 3.6V
20
VCC = 2.7V
15
VCC = 1.2V
2
µA
µA
Capacitance (f = 1 MHz, Ta = Room temperature, VCC = NOMINAL)2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CS, WE, OE
VIN = 0V
5
pF
I/O capacitance
CI/O
I/O
VIN = VOUT = 0V
7
pF
10/6/00
ALLIANCE SEMICONDUCTOR
3
AS6UA5128
®
Read cycle (over the operating range)3,9
–55
Parameter
–70
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
55
–
70
–
ns
Address access time
tAA
–
55
–
70
ns
3
Chip select (CS) access time
tACS
–
55
–
70
ns
3
Output enable (OE) access time
tOE
–
25
–
35
ns
Output hold from address change
tOH
10
–
10
–
ns
5
CS low to output in low Z
tCLZ
10
–
10
–
ns
4, 5
CS high to output in high Z
tCHZ
0
20
0
20
ns
4, 5
OE low to output in low Z
tOLZ
5
–
5
–
ns
4, 5
OE high to output in high Z
tOHZ
0
20
0
20
ns
4, 5
Power up time
tPU
0
–
0
–
ns
4, 5
Power down time
tPD
–
55
–S
70
ns
S
Key to switching waveforms
Rising input
Falling input
Undefined/don’t care
Read waveform 1 (address controlled)3,6,7,9
tRC
Address
tOH
DOUT
tAA
tOH
Previous data valid
Data valid
Read waveform 2 (CS, OE controlled)3,6,8,9
tRC1
CS
tOE
OE
tOLZ
tOHZ
tACE
tCHZ
DOUT
Data valid
tCLZ
Supply
current
4
tPU
tPD
50%
50%
ALLIANCE SEMICONDUCTOR
ICC
ISB
10/6/00
AS6UA5128
®
Write cycle (over the operating range)11
–55
Parameter
–70
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
tWC
55
–
70
–
ns
Chip select to write end
tCW
40
–
60
–
ns
Address setup to write end
tAW
40
–
60
–
ns
Address setup time
tAS
0
–
0
–
ns
Write pulse width
tWP
35
–
55
–
ns
Address hold from end of write
tAH
0
–
0
–
ns
Data valid to write end
tDW
25
–
30
–
ns
Data hold time
tDH
0
–
0
–
ns
4, 5
Write enable to output in high Z
tWZ
0
20
0
20
ns
4, 5
Output active from write end
tOW
5
–
5
–
ns
4, 5
12
12
Write waveform 1 (WE controlled)10,11
tWC
tAW
tAH
Address
tWP
WE
tAS
tDW
DIN
tDH
Data valid
tWZ
tOW
DOUT
Write waveform 2 (CS controlled)10,11
tAW
tWC
tAH
Address
tAS
tCW
CS
tWP
WE
tWZ
DIN
tDW
tDH
Data valid
DOUT
10/6/00
ALLIANCE SEMICONDUCTOR
5
AS6UA5128
®
Data retention characteristics (over the operating range) 13,5
Parameter
Symbol
VCC for data retention
VDR
Data retention current
ICCDR
Chip deselect to data retention time
tCDR
Operation recovery time
Test conditions
VCC = 1.2V
CS ≥ VCC – 0.1V or
VIN ≥ VCC – 0.1V or
VIN ≤ 0.1V
tR
Min
Max
Unit
1.2V
3.6
V
–
4
mA
0
–
ns
tRC
–
ns
Data retention waveform
Data retention mode
VCC
VDR ≥ 1.2V
VCC
VCC
tCDR
tR
VDR
VIH
CS
VIH
AC test loads and waveforms
VCC
OUTPUT
Thevenin equivalent:
R1
R1
VCC
OUTPUT
30 pF
RTH
5 pF
ALL INPUT PULSES
R2
INCLUDING
JIG AND
SCOPE
VCC Typ
R2
INCLUDING
JIG AND
SCOPE
(a)
V
OUTPUT
GND
90%
10%
(b)
90%
< 5 ns
10%
(c)
Parameters
VCC = 3.0V
VCC = 2.5V
VCC = 2.0V
Unit
R1
1105
16670
15294
Ohms
R2
1550
15380
11300
Ohms
RTH
645
8000
6500
Ohms
VTH
1.75V
1.2V
0.85V
Volts
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
14
During VCC power-up, a pull-up resistor to VCC on CS is required to meet ISB specification.
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions.
tCLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CS and OE are LOW for read cycle.
Address valid prior to or coincident with CS transition LOW.
All read cycle timings are referenced from the last valid address to the first transitioning address.
CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.
All write cycle timings are referenced from the last valid address to the first transitioning address.
N/A.
1.2V data retention applies to commercial and industrial temperature range operations.
C = 30pF, except at high Z and low Z parameters, where C = 5pF.
6
ALLIANCE SEMICONDUCTOR
10/6/00
AS6UA5128
®
Typical DC and AC characteristics
Normalized supply current
vs. supply voltage
Normalized access time
vs. supply voltage
1.4
Normalized standby current
vs. ambient temperature
1.0
3.0
2.5
0.8
VIN = VCC typ
TA = 25° C
0.6
0.4
0.75
Normalized ISB2
1.0
Normalized TAA
Normalized ICC
1.2
TA = 25° C
0.5
1.5
1.0
0.5
0.0
0.25
0.2
VCC = VCC typ
VIN = VCC typ
2.0
–0.5
0.0
1.7
2.2
2.7
3.2
3.7
Supply voltage (V)
0.0
1.7
2.2
2.7
3.2
3.7
–55
Supply Voltage (V)
Normalized standby current
vs. supply voltage
Normalized ICC
vs. Cycle Time
1.4
1.0
Normalized ICC
Normalized ISB
1.5
ISB2
1.2
0.8
0.6
VIN = VCC typ
TA = 25° C
0.4
0.2
VIN = 3.6V
TA = 25° C
1.0
0.50
0.10
0.0
1
10/6/00
25
105
Ambient temperature (°C)
2.8
1.9
Supply voltage (V)
3.7
ALLIANCE SEMICONDUCTOR
1
5
10
Supply voltage (V)
15
7
AS6UA5128
®
Package diagrams and dimensions
36(48)-ball FBGA
Bottom View
6
5
4
3
Top View
2
1
Ball #A1 index
Ball #A1
A
B
C
D
SRAM Die
C1
C
E
F
A
G
H
Elastomer
A
B
B1
Detail View
Side View
A
E2
D
E
E2
Y
E
Die
Die
E1
A
B
B1
C
C1
D
E
E1
E2
Y
8
Minimum
–
6.90
–
10.90
–
0.30
–
–
0.22
–
0.3/Typ
Typical
0.75
7.00
3.75
11.00
5.25
0.35
–
0.68
0.25
–
Maximum
–
7.10
–
11.10
–
0.40
1.20
–
0.27
0.08
Notes
1. Bump counts: 36(48) (8 row × 6 column).
2. Pitch: (x,y) = 0.75 mm × 0.75 mm (typ).
3. Units: millimeters.
4. All tolerance are ±0.050 unless otherwise specified.
5. Typ: typical.
6. Y is coplanarity: 0.08 (max).
ALLIANCE SEMICONDUCTOR
10/6/00
AS6UA5128
®
Ordering codes
Speed (ns)
Ordering Code
Package Type
Operating Range
55/70
AS6UA5128-BC
48-ball fine pitch BGA
Commercial
55/70
AS6UA5128-BI
48-ball fine pitch BGA
Industrial
Part numbering system
AS6UA
5128
T, ST, HF, HR, B
C, I
SRAM Intelliwatt™ prefix
Device number
Package:
B: CSP BGA
Temperature range:
C: Commercial: 0° C to 70° C
I: Industrial: –40°C to 85° C
10/6/00
ALLIANCE SEMICONDUCTOR
9
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