ASX520 250 ~ 3000 MHz MMIC Amplifier Description Features 31 dB Gain at 900 MHz 33 dBm P1dB at 900 MHz 48 dBm Output IP3 at 900 MHz MTTF > 100 Years Two Power Supplies The ASX520, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 3 GHz. The amplifier is available in a SOIC package and passes through the stringent DC, RF, and reliability tests. Package Style: SOIC8 Typical Performance (Supply Voltage = Device Voltage, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 900 Gain dB 31.0 IF (400 ~ 430 MHz) S11 dB -15 LTE (700 ~ 800 MHz) S22 dB -9 CDMA Output IP31) dBm 48 GSM Noise Figure dB 7.0 RFID (USA) Output P1dB dBm 33 Others (1250 ~ 1300 MHz) Current mA 650 Device Voltage V +5 Application Circuit Others (950 ~ 1240 MHz) 1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Product Specifications Parameters Units Min Typ Testing Frequency MHz Gain dB S11 dB -15 S22 dB -9 Output IP3 dBm Noise Figure dB Output P1dB dBm 32 33 Current mA 610 650 Device Voltage V Max 900 30.0 45 31.0 48 7.0 7.3 690 +5 Pin Configuration Absolute Maximum Ratings Parameters Rating Pin No. Function Operating Case Temperature -40 to 85 C 1 2nd stage RF IN Storage Temperature -40 to 150 C 2 1st stage RF OUT Device Voltage +6 V Operating Junction Temperature +150 C 3,5,8 GND Input RF Power (CW, 50 matched)1) +25 dBm 4 1st stage RF IN Thermal Resistance 18 C/W 6,7 2nd stage RF OUT 1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/11 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier Outline Drawing Part No. Symbols ASX520 ● A A1 A2 B C D D2 E E1 E2 e L y |L1-L1’| L1 Pin No. 1 2 3 4 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0 ----1.04REF Function 2nd stage RF IN 1st stage RF OUT GND 1st stage RF IN Pin No. 5 6 7 8 MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8 0.12 Function. GND 2nd stage RF OUT 2nd stage RF OUT GND Note: 1. Backside metal paddle is RF and DC ground. Mounting Recommendation (In mm) Note: 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground / thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. ESD Classification HBM Class 1B Voltage Level: 500 V ~ 1000 V MM Class A Voltage Level: < 200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260 C reflow 2/11 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT IF 400 ~ 430 MHz +5 V Frequency (MHz) 400 ~ 430 Magnitude S21 (dB) 37.5 39.0 Magnitude S11 (dB) -11.0 -12.0 Magnitude S22 (dB) -2.5 -5.0 Output P1dB (dBm) 30 Output IP31) (dBm) 45 Noise Figure (dB) 8.3 Device Voltage (V) +5 Current (mA) 650 1) OIP3 is measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C7=1 F C6=100pF C9=1 F C8=100pF C5=15 pF C4=100 pF L1=12 nH (Coil Inductor) L4=6.8 nH C2=270 pF 2.5 mm ASX520 L2=12 nH RF IN RF OUT 3.5 mm L3=1.8 nH C3=22 pF C1=100 pF 50 0 40 -5 30 -10 S11 (dB) Gain (dB) S-parameters & K-factor 20 -20 10 0 300 -15 350 400 450 500 550 600 -25 300 350 400 450 500 550 600 Frequency (MHz) Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 300 350 400 450 500 550 600 0 0 500 Frequency (MHz) 3/11 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT LTE 700 ~ 800 MHz +5 V Frequency (MHz) 700 ~ 800 Magnitude S21 (dB) 36.8 32.3 Magnitude S11 (dB) -12 -12 Magnitude S22 (dB) -8 -8 Output P1dB (dBm) 32.5 Output IP31) (dBm) 48 Noise Figure (dB) 6.7 Device Voltage (V) +5 Current (mA) 650 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C9=100pF C6=7 pF C5=100 pF L1=39 nH (Coil Inductor) L3=3.9 nH C3=68 pF 3 mm RF OUT ASX520 L2=82 nH RF IN 5.5 mm 1 mm C4=9 pF C1=68 pF C2=2 pF 50 0 40 -5 30 -10 S11 (dB) Gain (dB) S-parameters & K-factor 20 10 0 400 -15 -20 500 600 700 800 900 1000 -25 400 500 600 Frequency (MHz) 5 0 4 Stability Factor 5 S22 (dB) -5 -10 900 1000 3 2 0 500 600 700 800 900 1000 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 4/11 800 1 -15 -20 400 700 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 824 ~ 849 Magnitude S21 (dB) 32.0 Magnitude S11 (dB) -15 Magnitude S22 (dB) -8 CDMA Rx Output P1dB (dBm) 32 824 ~ 849 MHz Output IP31) (dBm) 46.5 Noise Figure (dB) 7.0 Device Voltage (V) +5 Current (mA) 650 +5 V 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C6=5.6 pF C5=100 pF C9=100pF L1=82 nH (Coil Inductor) L3=3.3 nH C3=68 pF RF OUT 3 mm ASX520 L2=100 nH RF IN 4.5 mm C1=68 pF C4=9 pF C2=1.2 pF S-parameters & K-factor 40 0 35 -5 S11 (dB) Gain (dB) 30 25 -10 20 -15 15 10 600 700 800 900 1000 1100 1200 -20 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 0 5 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 600 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 5/11 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT Frequency (MHz) 869 ~ 894 890 ~ 915 935 ~ 960 Magnitude S21 (dB) 31.5 31.0 29.0 Magnitude S11 (dB) -15.0 -15.0 -14.0 Magnitude S22 (dB) -10.0 -9.0 -7.5 CDMA Tx, GSM Output P1dB (dBm) 32.5 33.0 33.0 869 ~ 960 MHz Output IP31) (dBm) 47 48 48 Noise Figure (dB) 7.5 7.0 7.0 Device Voltage (V) +5 +5 +5 Current (mA) 650 650 650 +5 V 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C6=5.6 pF C5=100 pF C9=100pF L1=82 nH (Coil Inductor) L3=2.7 nH C3=68 pF RF OUT 3 mm ASX520 L2=100 nH RF IN 5 mm C1=68 pF C4=7.5 pF C2=1.5 pF S-parameters & K-factor 50 0 -5 40 -10 S11 (dB) Gain (dB) 30 20 -20 o -40 c o 25 c o 85 c 10 0 600 700 800 900 1000 1100 -15 o -40 c o 25 c o 85 c -25 1200 -30 600 700 800 Frequency (MHz) 5 0 4 Stability Factor 5 S22 (dB) -5 -10 o -40 c o 25 c o 85 c -15 -20 600 700 800 900 1000 1000 1100 1200 1100 3 2 1 1200 0 0 500 Frequency (MHz) 6/11 900 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier Gain vs. Temperature 900 38 800 36 700 34 Gain (dB) Current (mA) Current vs. Temperature 600 32 500 30 400 28 Frequency = 880 MHz 300 -60 -40 -20 0 20 40 60 80 26 -60 100 -40 -20 0 o 20 40 60 80 100 o Temperature ( C) Temperature ( C) Output IP3 vs. Tone Power (Frequency = 880 MHz) P1dB vs. Temperature MHz)80 44 70 40 60 Output IP3 (dBm) P1dB (dBm) 36 32 28 40 30 o -40 c o 25 c o 85 c 20 Frequency = 880 MHz 24 20 -60 50 10 -40 -20 0 20 40 60 80 100 0 11 12 13 Temperature ( C) 7/11 14 15 16 17 18 19 20 21 22 23 Pout per Tone (dBm) o ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT RFID (USA) Country EU 2) USA Korea 2) Japan 2) Frequency (MHz) 865.6 ~ 867.6 902 ~ 928 910 ~ 914 950 ~ 956 Magnitude S21 (dB) 31.0 30.0 31.0 29.0 Magnitude S11 (dB) -15.0 -15.0 -15.0 -14.0 Magnitude S22 (dB) -10.0 -8.0 -9.0 -7.5 Output P1dB (dBm) 32 33 33 33 902 ~ 928 MHz Output IP3 (dBm) 47 48 48 48 +5 V Noise Figure (dB) 7.4 6.9 6.8 6.9 Device Voltage (V) +5 +5 +5 +5 Current (mA) 650 650 650 650 1) 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2) Test Results are measured by CDMA Tx (EU), GSM Rx (Korea), GSM Tx (Japan) Application circuits. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C8=1 F C7=100pF C10=1 F C6=5.6 pF C5=100 pF C9=100pF L1=82 nH (Coil Inductor) L3=2.7 nH C3=68 pF RF OUT 3 mm ASX520 L2=100 nH RF IN 5 mm C1=68 pF C4=7.5 pF C2=1.5 pF 40 0 35 -5 30 -10 S11 (dB) Gain (dB) S-parameters & K-factor 25 20 15 600 -15 -20 700 800 900 1000 1100 1200 -25 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 600 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 8/11 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT Others 1250 ~ 1300 MHz +5 V Frequency (MHz) 1250 ~ 1300 Magnitude S21 (dB) 25.0 Magnitude S11 (dB) -14 Magnitude S22 (dB) -12 Output P1dB (dBm) 29 Output IP31) (dBm) 47 Noise Figure (dB) 6.8 Device Voltage (V) +5 Current (mA) 650 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode R1=3 C7=1 F C6=100pF C9=1 F C5=3 pF C4=9 pF C8=100pF L1=82 nH (Coil Inductor) L3=1.2 nH C2=68 pF RF OUT 3 mm ASX520 L2=100 nH RF IN 5 mm C1=68 pF C3=4 pF S-parameters & K-factor 30 0 25 -5 20 S11 (dB) Gain (dB) -10 15 -15 10 -20 5 0 1000 1100 1200 1300 1400 1500 1600 -25 1000 1100 1200 Frequency (MHz) 1300 1400 1500 1600 Frequency (MHz) 0 5 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 1000 1100 1200 1300 1400 1500 1600 0 0 500 Frequency (MHz) 9/11 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier APPLICATION CIRCUIT Others 950 ~ 1240 MHz +5 V Frequency (MHz) 950 1240 Magnitude S21 (dB) 30.0 26.0 Magnitude S11 (dB) -18.0 -15.0 Magnitude S22 (dB) -6.5 -9.0 Output P1dB (dBm) 30 30 Output IP31) (dBm) 41 42 Noise Figure (dB) 6.9 6.9 Device Voltage (V) +5 +5 Current (mA) 660 660 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs=5 V D1=5.6V Zener Diode C7=1 F C6=100pF C9=1 F C8=100pF C5=4 pF C4=22 pF L1=56 nH (Coil Inductor) L3=1.5 nH C2=68 pF RF OUT 3 mm ASX520 L2=100 nH RF IN 5 mm C1=68 pF C3=5 pF S-parameters & K-factor 0 35 30 -5 -10 20 S11 (dB) Gain (dB) 25 15 -15 10 -20 5 0 600 800 1000 1200 1400 -25 600 800 Frequency (MHz) 1000 1200 1400 Frequency (MHz) 0 5 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 600 800 1000 1200 1400 0 0 500 Frequency (MHz) 10/11 1000 1500 2000 2500 3000 3500 Frequency [MHz] ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017 ASX520 250 ~ 3000 MHz MMIC Amplifier Recommended Soldering Reflow Profile 260 C Ramp-up (3 C/sec) 20~40 sec Ramp-down (6 C/sec) 200 C 150 C 60~180 sec Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 11/11 ASB Inc. [email protected] Tel: +82-42-528-7225 February 2017