Central CMXD6001 Surface mount triple isolated low leakage silicon switching diode Datasheet

CMXD6001
SURFACE MOUNT
TRIPLE ISOLATED
LOW LEAKAGE
SILICON SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD6001 type
contains three (3) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package, and
designed for switching applications requiring extremely
low leakage.
MARKING CODE: X01
SOT-26 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
SYMBOL
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
IF
100
V
250
mA
IFRM
IFSM
250
mA
4.0
A
IFSM
PD
1.0
A
350
mW
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
TJ, Tstg
ΘJA
UNITS
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IR
VR=75V
IR=100μA
BVR
VF
MIN
MAX
UNITS
500
pA
100
V
IF=1.0mA
IF=10mA
0.85
V
0.95
V
1.1
V
CT
IF=100mA
VR=0, f=1.0MHz
2.0
pF
trr
IR=IF=10mA, Irr=1.0mA, RL=100Ω
3.0
μs
VF
VF
R3 (12-February 2010)
CMXD6001
SURFACE MOUNT
TRIPLE ISOLATED
LOW LEAKAGE
SILICON SWITCHING DIODES
SOT-26 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
MARKING CODE: X01
R3 (12-February 2010)
w w w. c e n t r a l s e m i . c o m
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