BSI BS616LV2011EI Very low power/voltage cmos sram 128k x 16 bit Datasheet

BSI
Very Low Power/Voltage CMOS SRAM
128K X 16 bit
„ FEATURES
• Very low operation voltage : 2.4 ~ 5.5V
• Very low power consumption :
Vcc = 3.0V
C-grade: 20mA (Max.) operating current
I-grade: 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V
C-grade: 40mA (Max.) operating current
I -grade: 45mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
-10
100ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
BS616LV2011
„ DESCRIPTION
The BS616LV2011 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70/100ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2011 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2011 is available in DICE form, JEDEC standard 44-pin
TSOP Type II package , JEDEC standard 48-pin TSOP Type I package
and 48-ball BGA package.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS616LV2011DC
BS616LV2011EC
BS616LV2011TC
BS616LV2011AC
BS616LV2011DI
BS616LV2011EI
BS616LV2011TI
BS616LV2011AI
O
Vcc
RANGE
O
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
( ICCSB1, Max )
Vcc=
3.0V
Vcc=
5.0V
+0 C to +70 C
2.4V ~ 5.5V
70/100
-40 O C to +85 O C
2.4V ~ 5.5V
70/100
1.5uA
PKG TYPE
( ICC, Max )
Vcc=
3.0V
0.7uA
„ PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
POWER DISSIPATION
STANDBY
Operating
SPEED
( ns )
Vcc=
3.0V
Vcc=
5.0V
6uA
20mA
40mA
25uA
25mA
45mA
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
DICE
TSOP2-44
TSOP1-48
BGA-48-0608
„ BLOCK DIAGRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV2011EC
BS616LV2011EI
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
LB
OE
A0
A1
A2
N.C.
B
D8
UB
A3
A4
CE
D0
C
D9
D10
A5
A6
D1
D2
A8
A13
A15
Address
A16
A14
Input
A12
Buffer
A7
20
1024
Row
Memory Array
Decoder
1024 x 2048
A6
A5
A4
2048
16
DQ0
.
.
.
.
.
.
.
.
Data
Input
Buffer
16
Column I/O
Write Driver
Sense Amp
16
Data
Output
Buffer
DQ15
128
16
Column Decoder
14
CE
WE
D
VSS
D11
N.C.
A7
D3
VCC
OE
UB
E
VCC
D12
N.C.
A16
D4
VSS
LB
F
D14
D13
A14
A15
D5
D6
G
D15
N.C.
A12
A13
WE
D7
N.C.
A8
A9
A10
A11
N.C.
H
Control
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
Vcc
Gnd
48-ball BGA top view
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2011
1
Revision 2.5
April 2002
BSI
BS616LV2011
„ PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.
CE Chip Enable Input
CE is active LOW. Chip enables must be active when data read from or write to the
device. if chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0 - DQ15 Data Input/Output
Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
CE
WE
OE
LB
UB
DQ0~DQ7
DQ8~DQ15
Vcc CURRENT
Not selected
(Power Down)
H
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
Output Disabled
L
H
H
X
X
High Z
High Z
ICC
L
L
Dout
Dout
ICC
H
L
High Z
Dout
ICC
L
H
Dout
High Z
ICC
L
L
Din
Din
ICC
H
L
X
Din
ICC
L
H
Din
X
ICC
Read
Write
R0201-BS616LV2011
L
L
H
L
L
X
2
Revision 2.5
April 2002
BSI
BS616LV2011
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
VTERM
Terminal Voltage
Respect to GND
with
TBIAS
Temperature Under Bias
„ OPERATING RANGE
RATING
UNITS
RANGE
AMBIENT
TEMPERATURE
Vcc
-0.5 to
Vcc+0.5
V
Commercial
0 O C to +70 O C
2.4V ~ 5.5V
Industrial
-40 O C to +85 O C
2.4V ~ 5.5V
-40 to +125
O
C
-60 to +150
O
C
TSTG
Storage Temperature
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
MAX.
UNIT
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not tested.
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
NAME
PARAMETER
VIL
Guaranteed Input Low
(2)
Voltage
Vcc=3.0V
VIH
Guaranteed Input High
Voltage(2)
Vcc=3.0V
IIL
Input Leakage Current
IOL
Output Leakage Current
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
ICC
Operating Power Supply
Current
CE = VIL, IDQ = 0mA, F = Fmax(3)
ICCSB
Standby Current –TTL
CE = VIH, IDQ = 0mA
ICCSB1
Standby Current–CMOS
CE Њ Vcc-0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
MIN. TYP. (1) MAX.
TEST CONDITIONS
-0.5
UNITS
--
0.8
V
--
Vcc+0.2
V
--
1
uA
--
--
1
uA
--
--
0.4
V
2.4
--
--
V
Vcc=3.0V
--
--
20
Vcc=5.0V
------
---0.1
0.6
40
0.5
1
0.7
6
Vcc=5.0V
2.0
2.2
--
Vcc=5.0V
Vcc = Max, VIN = 0V to Vcc
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
mA
mA
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.05
0.5
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
--
ns
TRC (2)
--
--
ns
tR
See Retention Waveform
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
R0201-BS616LV2011
3
Revision 2.5
April 2002
BSI
BS616LV2011
„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
Vcc
tR
t CDR
CE ≥ Vcc - 0.2V
VIH
CE
„ KEY TO SWITCHING WAVEFORMS
„ AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
VIH
Vcc/0V
5ns
WAVEFORM
0.5Vcc
„ AC TEST LOADS AND WAVEFORMS
1269 Ω
3.3V
1269 Ω
3.3V
OUTPUT
OUTPUT
100PF
INCLUDING
JIG AND
SCOPE
1404 Ω
1404 Ω
FIGURE 1A
FIGURE 1B
THEVENIN EQUIVALENT
667 Ω
OUTPUT
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
5PF
INCLUDING
JIG AND
SCOPE
INPUTS
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
1.73V
ALL INPUT PULSES
Vcc
GND
→
10%
90% 90%
10%
←
→
← 5ns
FIGURE 2
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
READ CYCLE
JEDEC
PARAMETER
PARAMETER
NAME
NAME
BS616LV2011-70
MIN. TYP. MAX.
DESCRIPTION
tAVAX
tAVQV
tELQV
tBA
tGLQV
tELQX
tBE
tGLQX
tEHQZ
tBDO
tGHQZ
tRC
t AA
t ACS
tBA(1)
tOE
tCLZ
tBE
tOLZ
tCHZ
tBDO
tOHZ
Read Cycle Time
tAXOX
tOH
70
Data Byte Control Access Time
Data Byte Control to Output Low Z
100
--
--
ns
--
--
70
--
--
100
ns
--
--
70
--
--
100
ns
(LB,UB)
--
--
35
--
--
50
ns
--
--
35
--
--
50
ns
(CE)
10
--
--
15
--
--
ns
(LB,UB)
10
--
--
15
--
--
ns
10
--
--
15
--
--
ns
Output Enable to Output Valid
Chip Select to Output Low Z
--
UNIT
(CE)
Address Access Time
Chip Select Access Time
--
BS616LV2011-10
MIN. TYP. MAX.
Output Enable to Output in Low Z
(CE)
0
--
35
0
--
40
ns
Data Byte Control to Output High Z (LB,UB)
0
--
35
0
--
40
ns
Output Disable to Output in High Z
0
--
30
0
--
35
ns
Output Disable to Address Change
10
--
--
15
--
--
ns
Chip Deselect to Output in High Z
NOTE :
1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle. ; .tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle.
R0201-BS616LV2011
4
Revision 2.5
April 2002
BSI
BS616LV2011
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2 (1,3,4)
CE
t ACS
t BA
LB,UB
t BE
D OUT
t
t BDO
(5)
t
(5)
CHZ
CLZ
READ CYCLE3 (1,4)
t RC
ADDRESS
t
AA
OE
t OH
t OE
t OLZ
CE
(5)
t CLZ
t
t OHZ (5)
t CHZ(1,5)
ACS
t BA
LB,UB
t BE
t BDO
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS616LV2011
5
Revision 2.5
April 2002
BSI
BS616LV2011
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
t E1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
t WC
t CW
t AS
t AW
t WP
t WR
t BW(1)
t WHZ
t DW
t DH
t OHZ
tWHOX
t OW
BS616LV2011-70
MIN. TYP. MAX.
DESCRIPTION
Write Cycle Time
70
--
Chip Select to End of Write
70
0
Address Valid to End of Write
Write Pulse Width
--
100
--
--
100
--
--
0
70
--
--
100
35
--
--
50
(CE,WE)
0
--
--
(LB,UB)
30
--
--
Address Setup Time
Write recovery Time
Date Byte Control to End of Write
BS616LV2011-10
MIN. TYP. MAX.
--
UNIT
--
ns
--
--
ns
--
--
ns
--
--
ns
--
--
ns
0
--
--
ns
40
--
--
ns
0
--
30
0
--
40
ns
Data to Write Time Overlap
30
--
--
40
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
0
--
30
0
--
40
ns
End of Write to Output Active
5
--
--
10
--
--
ns
Write to Output in High Z
NOTE :
1. tBW is 30ns/40ns (@speed=70ns/100ns) with address toggle. ; tBW is 70ns/100ns (@speed=70ns/100ns) without address toggle.
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
(11)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
(3)
t WP
t AS
(2)
(4,10)
t OHZ
D OUT
t
DH
t DW
D IN
R0201-BS616LV2011
6
Revision 2.5
April 2002
BSI
BS616LV2011
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
t WR
t WP
(3)
(2)
t
t AS
DH
(4,10)
t WHZ
D OUT
(7)
(8)
t DW
t
DH
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE going low to the end of write.
R0201-BS616LV2011
7
Revision 2.5
April 2002
BSI
BS616LV2011
„ ORDERING INFORMATION
BS616LV2011
X X
-- Y Y
SPEED
70: 70ns
10: 100ns
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
E: TSOP 2 - 44 PIN
T: TSOP 1 - 48 PIN
A: BGA - 48 PIN(6x8mm)
D: DICE
„ PACKAGE DIMENSIONS
TSOP2-44
R0201-BS616LV2011
8
Revision 2.5
April 2002
BSI
BS616LV2011
„ PACKAGE DIMENSIONS
48
24
25
b
E
1
UNIT
SYMBOL
12̓(2X)
CL
e
12̓(2X)
HD
Seating Plane
12̓(2x)
y
"A"
INCH
0.0433̈́0.004
0.004̈́0.002
0.039̈́0.002
0.009̈́0.002
0.008̈́0.001
0.004 ~ 0.008
0.004 ~ 0.006
0.645̈́0.004
0.472̈́0.004
0.020̈́0.004
0.708̈́0.008
0.0236̈́0.006
0.0315̈́0.004
0.004 Max.
0̓~ 8̓
MM
1.10̈́0.10
0.10̈́0.05
1.00̈́0.05
0.22̈́0.05
0.20̈́0.03
0.10 ~ 0.21
0.10 ~ 0.16
16.40̈́0.10
12.00̈́0.10
0.50̈́0.10
18.00̈́0.20
0.60̈́0.15
0.80̈́0.10
0.1 Max.
0̓~ 8̓
A2
A
D
A
A1
A2
b
b1
c
c1
D
E
e
HD
L
L1
y
Ӱ
GAUGE PLANE
25
24
0
SEATING PLANE
A
12̓(2x)
b
WITH PLATING
"A" DETAIL VIEW
0.254
A1
A
L
L1
c c1
b1
BASE METAL
SECTION A-A
48
1
TSOP1-48PIN
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
/WE
CE2
NC
/UB
/LB
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
9
10
13
48
47
46
Pkg Type :
48TSOP(I)-12x18mm
37
16
17
27
24
R0201-BS616LV2011
25
9
A16
NC
VSS
IO15
IO7
IO14
IO6
IO13
IO5
IO12
IO4
VCC
IO11
IO3
IO10
IO2
IO9
IO1
IO8
IO0
/OE
VSS
/CE
A0
Revision 2.5
April 2002
BSI
BS616LV2011
„ PACKAGE DIMENSIONS (continued)
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.4 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8)
R0201-BS616LV2011
10
Revision 2.5
April 2002
BSI
BS616LV2011
REVISION HISTORY
Revision
Description
Date
2.2
2001 Data Sheet release
Apr. 15, 2001
2.3
Modify Standby Current (Typ. and
Max.)
Jun. 29, 2001
2.4
Modify CSP Pin Configuration
Pin number : E3
“ VSS ” rename to “ N.C. “
Modify some AC parameters.
Modify 5V ICCSB1_Max(I-grade)
from 10uA to 25uA.
Sep.12, 2001
2.5
R0201-BS616LV2011
11
Note
April,12,2002
Revision 2.5
April 2002
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