TOSHIBA 2SC5714_06

2SC5714
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC5714
Industrial Applications
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Unit: mm
•
High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
•
Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)
•
High-speed switching: tf = 90 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEX
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
7
V
DC
IC
4
Pulse
ICP
7
IB
400
PC
1.0
(Note 1)
2.5
Tj
Tstg
Collector current
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
A
mA
JEDEC
―
JEITA
SC-62
W
TOSHIBA
2-5K1A
150
°C
Weight: 0.05 g (typ.)
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2SC5714
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
⎯
⎯
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
⎯
⎯
100
nA
V (BR) CEO
IC = 10 mA, IB = 0
20
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 0.5 A
400
⎯
1000
hFE (2)
VCE = 2 V, IC = 1.6 A
200
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 32 mA
⎯
⎯
0.15
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 32 mA
⎯
⎯
1.10
V
Cob
VCB = 10 V, IE = 0, f = 1 MHz
⎯
18
⎯
pF
Rise time
tr
See Figure 1 circuit diagram.
⎯
100
⎯
Storage time
tstg
VCC ∼
− 12 V, RL = 7.5 Ω
⎯
350
⎯
Fall time
tf
IB1 = −IB2 = 53.3 mA
⎯
90
⎯
Collector-emitter breakdown voltage
DC current gain
Collector output capacitance
Switching time
ns
Marking
VCC
Part No. (or abbreviation code)
IB1
Input
IB1
RL
20 μs
2
Output
IB2
IB2
Lot No.
Duty cycle < 1%
Figure 1
E
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Switching Time Test Circuit &
Timing Chart
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2SC5714
IC – VCE
50
Collector current IC
−55
40
30
4
20
3
10
2
5
100
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
1
IB = 2 mA
0
0
0.2
0.1
Ta = 100°C
25
60
(A)
5
hFE – IC
1000
Common emitter
Ta = 25°C
Single nonrepetitive pulse
DC current gain hFE
6
0.3
0.4
10
0.001
0.5
Collector-emitter voltage VCE (V)
0.01
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (V)
0.1
Ta = 100°C
25°C
−55°C
0.01
0.01
10
(A)
VBE (sat) – IC
10
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.001
0.001
1
Collector current IC
VCE (sat) – IC
1
0.1
0.1
1
Collector current IC
Common emitter
IC/IB = 50
Single nonrepetitive pulse
Ta = 100°C
0.1
0.001
10
(A)
−55
1
0.01
25
0.1
Collector current IC
1
10
(A)
IC – VBE
6
Ta = 100°C 25
−55
Collector current IC
(A)
5
Common emitter
VCE = 2 V
Single nonrepetitive pulse
4
3
2
1
0
0
0.2
0.4
0.6
Base-emitter voltage
0.8
1
1.2
VBE (V)
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2SC5714
Transient Thermal Resistance
rth – tw
Transient thermal resistance
rth (°C/W)
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse
Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
1
0.001
0.01
0.1
1
Pulse width
10
100
1000
tw (s)
Safe Operating Area
IC max (pulsed) ♦
Collector current IC
(A)
IC max (continuous)
1
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
Ta = 25°C
0.1 Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly with
increase in temperature.
0.01
0.1
1
10
10 μs♦
100 μs♦
1 ms♦
10 ms♦
100 ms♦*
−10 s♦*
VCEO max
10
100
Collector-emitter voltage VCE (V)
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2SC5714
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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