2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications · Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) · Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 8 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Storage temperature range JEDEC TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2003-02-04 2SD2088 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 45 V, IE = 0 ― ― 10 µA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 4 mA V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V Collector-emitter breakdown voltage DC current gain hFE VCE = 2 V, IC = 1 A 2000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 1 mA ― ― 2.0 V VCE = 2 V, IC = 0.5 A ― 100 ― MHz Transition frequency fT Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF Unclamped inductive load energy ES/B L = 10 mH, IC = 1.3 A, IB = ±50 mA 8.4 ― ― mJ ― 0.4 ― ― 4.0 ― ― 0.6 ― tstg Input IB1 IB2 Output 30 Ω Storage time 20 µs IB2 Switching time ton IB1 Turn-on time µs VCC = 30 V Fall time tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% Marking D2088 Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD2088 IC – VCE 2.0 500 200 Common emitter Common emitter 185 5000 Ta = 25°C 1.6 VCE = 2 V hFE 3000 180 1.2 DC current gain IC (A) 250 Collector current hFE – IC 10000 175 0.8 IB = 170 µA 0.4 Ta = 100°C 1000 −55 500 300 25 100 PC = 0.9 W 50 0 0 2 4 6 8 VCE 0.03 (V) 0.1 0.3 Collector current VCE (sat) – IC IC 5 (A) 2.0 Common emitter IC/IB = 1000 Common emitter IC (A) VCE = 2 V Ta = −55°C 1 25 0.6 3 1 IC – VBE 3 Collector current Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter voltage 30 0.01 10 100 0.3 1 Collector current 3 IC (A) 1.6 1.2 Ta = 100°C −55 0.8 25 0.4 0 0 0.8 1.6 2.4 Base-emitter voltage VBE 3.2 4.0 (V) PC – Ta (W) 2.0 Collector power dissipation PC Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC Common emitter IC/IB = 1000 5 3 Ta = −55°C 25 1.5 1.0 0.5 100 1 0.3 0.5 Collector current 1 0 0 3 IC (A) 40 80 120 160 200 Ambient temperature Ta (°C) 3 2003-02-04 2SD2088 Safe Operating Area 5 IC max (pulsed)* (A) 1 IC 0.5 Collector current 3 0.3 100 µs* IC max (continuous) 10 ms* DC operation Ta = 25°C 1 ms* 0.1 0.05 *: Single nonrepetitive pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.1 0.3 1 VCEO max 3 10 Collector-emitter voltage VCE 30 50 100 (V) 4 2003-02-04 2SD2088 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-02-04