TOSHIBA 2SC3421_06

2SC3421
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
•
Complementary to 2SA1358
•
Suitable for driver of 60 to 80 watts audio amplifier
•
High breakdown voltage
Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
100
mA
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
1.5
10
W
Tj
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
TOSHIBA
2-8H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.82 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SC3421
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
―
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
―
100
nA
V (BR) CEO
IC = 10 mA, IB = 0
120
―
―
V
VCE = 5 V, IC = 100 mA
80
―
240
VCE (sat)
IC = 500 mA, IB = 50 mA
―
0.30
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
―
0.78
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 100 mA
―
120
―
MHz
VCB = 10 V, IE = 0, f = 1 MHz
―
15
―
pF
Collector-emitter breakdown voltage
hFE
DC current gain
(Note)
Collector-emitter saturation voltage
Collector output capacitance
Cob
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Lot No.
Characteristics indicator
C3421
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC3421
IC – VCE
hFE – IC
500
1200
Common emitter
16
(mA)
Collector current IC
DC current gain hFE
1000
Common emitter
300
Tc = 25°C
25
10
800
7
5
600
4
3
400
2
200
25
100
−25
50
30
10
3
6
4
8
Collector-emitter voltage
10
12
1000
(mA)
VCE (V)
VCE (sat) – IC
IC – VBE
1000
Common emitter
Common emitter
0.5
VCE = 5 V
(mA)
IC/IB = 10
0.3
Collector current IC
Collector-emitter saturation voltage
VCE (sat) (V)
300
14
1
Tc = 100°C
0.1
25
0.05
−25
0.03
0.01
100
Collector current IC
0
2
30
10
IB = 1 mA
0
0
VCE = 5 V
Tc = 100°C
3
10
30
100
Collector current IC
300
800
600
Tc = 100°C
400
25
−25
200
1000
0
0
(mA)
0.2
0.4
0.6
0.8
Base-emitter voltage
1.0
1.2
VBE (V)
Safe Operating Area
3000
IC max (pulsed)*
PC – Ta
(1)
8
6
4
0
0
100 ms*
300
DC operation
Tc = 25°C
100
50
*: Single nonrepetitive
pulse Tc = 25°C
(2)
20
40
60
80
100
120
140
10
160
Ambient temperature Ta (°C)
10 ms*
500
30
2
1 ms*
IC max (continuous)*
1000
(mA)
10
(1) Tc = Ta Infinite heat sink
(2) No heat sink
Collector current IC
Collector power dissipation PC
(W)
12
Curves must be derated
linearly with increase in
temperature
3
10
30
VCEO max
100
300
Collector-emitter voltage VCE (V)
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2006-11-09
2SC3421
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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