FAIRCHILD KSP62

KSP62/63/64
KSP62/63/64
Darlington Transistor
• Collector-Emitter Voltage: VCES=KSP62: 20V
KSP63/64: 30V
• Collector Power Dissipation: PC (max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
VCEO
Parameter
Value
Units
: KSP62
: KSP63/64
-20
-30
V
V
: KSP62
: KSP63/64
-20
-30
V
V
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
-500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55~150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCES
ICBO
Parameter
Collector-Emitter Breakdown Voltage
: KSP62
: KSP63/64
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
: KSP62
: KSP63
: KSP64
: KSP63
: KSP64
VBE (on)
fT
Min.
Max.
-20
-30
Units
V
V
Collector Cut-off Current
: KSP62
: KSP63/64
VCE (sat)
Test Condition
IC= -100µA, IB=0
VCB= -15V, IE=0
VCB= -30V, IE=0
-100
-100
nA
nA
VBE= -10V, IC=0
-100
nA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA
20K
5K
10K
10K
20K
* Collector-Emitter Saturation Voltage
: KSP62
: KSP63/64
IC= -10mA, IB= -0.01mA
IC= -100mA, IB= -0.1mA
-1.0
-1.5
V
V
* Base-Emitter On Voltage
: KSP62
: KSP63/64
VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA
-1.4
-2
V
V
Current Gain Bandwidth Product
: KSP63/64
VCE= -5V, IC= -100mA
f=100MHz
125
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP62/63/64
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000k
hFE, DC CURRENT GAIN
VCE = -5V
100k
10k
1k
-1
-10
-100
-1000
-10
IC = 1000 IB
V BE(sat)
-1
VCE(sat)
-0.1
-0.01
-1
IC[mA], COLLECTOR CURRENT
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IC [mA], COLLECTOR CURRENT
VCE = -5V
100
10
1
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
-2.8
VCE = -5V
100
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A2, September 2002
KSP62/63/64
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1