Vishay BFR280TW Silicon npn planar rf transistor Datasheet

BFR280T/BFR280TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 8 mA.
Features
D Low power applications
D Low noise figure
D High transition frequency
1
1
13 652
13 581
94 9280
2
3
BFR280T Marking: RE
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
13 570
3
BFR280TW Marking: WRE
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 114 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
15
8
2
10
80
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Document Number 85027
Rev. 2, 20-Jan-99
Symbol
RthJA
Value
450
Unit
K/W
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BFR280T/BFR280TW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
VCE = 15 V, VBE = 0
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
IC = 1 mA, IB = 0
IC = 5 mA, IB = 0.5 mA
VCE = 1 V, IC = 0.25 mA
VCE = 1 V, IC = 3 mA
Symbol Min
ICES
ICBO
IEBO
V(BR)CEO
8
VCEsat
hFE
30
hFE
30
Typ
0.1
90
100
Max Unit
100 mA
100 nA
1
mA
V
0.4
V
150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
q
y
Test Conditions
VCE = 1 V, IC = 3 mA, f = 500 MHz
VCE = 5 V, IC = 6 mA, f = 500 MHz
Collector-base capacitance
VCB = 1 V, f = 1 MHz
Collector-emitter capacitance VCE = 1 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
VCE = 1 V, IC = 3 mA, ZS = ZSopt,
f = 900 MHz
VCE = 5 V, IC = 3 mA, ZS = ZSopt,
f = 1.75 GHz
Power gain
VCE = 1 V, IC = 3 mA, ZS = 50 W,
ZL = ZLopt, f = 900 MHz
VCE = 5 V, IC = 6 mA, ZS = 50 W,
ZL = ZLopt, f = 1.75 GHz
Transducer gain
VCE = 5 V, IC = 6 mA, f = 900 MHz,
Z0 = 50 W
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Symbol
fT
fT
Ccb
Cce
Ceb
F
Min
Typ
5.5
7
0.3
0.15
0.3
1.6
Max
Unit
GHz
GHz
pF
pF
pF
dB
F
2.4
dB
Gpe
13.5
dB
Gpe
12
dB
S21e2
13
dB
Document Number 85027
Rev. 2, 20-Jan-99
BFR280T/BFR280TW
Vishay Telefunken
Dimensions of BFR280T in mm
95 11346
Dimensions of BFR280TW in mm
96 12236
Document Number 85027
Rev. 2, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BFR280T/BFR280TW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85027
Rev. 2, 20-Jan-99
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