Luguang BAW56T Switching diode Datasheet

BAW56T/BAV70T/BAV99T
Switching Diode
SOT-523
Features
—
—
—
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Dimensions in inches and (millimeters)
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Reverse voltage
VR
85
V
Forward current
IO
75
mA
Forward power dissipation
PD
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-65~150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
Test
conditions
MIN
MAX
85
UNIT
V(BR)
IR= 1μA
V
IR1
VR=75V
2
μA
IR2
VR=25V
0.03
μA
Forward voltage
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Diode capacitance
CD
VR=0
1.5
pF
Reverse recovery time
t rr
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
4
nS
Reverse voltage leakage current
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f=1MHz
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BAW56T/BAV70T/BAV99T
Switching Diode
Typical Characteristics
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mail:[email protected]
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