CYSTEKEC BTA1664L3 Low vcesat pnp epitaxial planar transistor Datasheet

Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 1/6
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1664L3
Features
• Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTA1664L3
SOT-223
C
E
B:Base
C:Collector
E:Emitter
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
Power Dissipation @TA=25℃
VCBO
VCEO
VEBO
IC
ICM
IBM
Pd
Junction Temperature
Storage Temperature
Tj
Tstg
Limits
Unit
-40
-25
-5
-2
-4
-200
3 (Note)
150
-55~+150
V
V
V
A
A
mA
W
°C
°C
Note : The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
BTA1664L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-25
-5
-0.5
120
40
-
Typ.
-0.24
120
19
Max.
-100
-100
-0.4
-0.8
390
-
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Classification of hFE 1
Rank
Q
R
Range
120~270
180~390
Ordering Information
Device
BTA1664L3
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
Marking
2500 pcs / Tape & Reel
A1664
Moisture Sensitivity Level : Conform to JEDEC Level 3
Recommended Storage Condition:
Temperature : ≤ 30 °C
Humidity : ≤ 60% RH
BTA1664L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)
VCE=3V
Saturation Voltage---(mV)
Current Gain---HFE
HFE
100
VCE=1V
100
IC=25IB
IC=10IB
10
10
1
10
100
Collector Current---IC(mA)
1
1000
Saturation Voltage vs Collector Current
100
1000
On Voltage vs Collector Current
10000
1000
On Voltage---(mV)
Saturation Voltage---(mV)
10
Collector Current---IC(mA)
1000
VBESAT@IC=10IB
VBEON@VCE=1V
100
100
1
10
100
1000
Collector Current---IC(mA)
1
10
100
1000
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(W)
3.5
3
2.5
2
1.5
1
0.5
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTA1664L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTA1664L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTA1664L3
CYStek Product Specification
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 6/6
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
Device Name
B
Date Code
C
1
2
A1664
□□
3
D
E
Style: Pin 1.Base 2.Collector 3.Emitter
F
H
G
a1
I
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
o
0
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
o
0
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1664L3
CYStek Product Specification
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