Renesas BCR16FM-12LB 600v - 16a - triac medium power use Datasheet

Preliminary Datasheet
BCR16FM-12LB
R07DS1188EJ0100
Rev.1.00
Mar 26, 2014
600V - 16A - Triac
Medium Power Use
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• Viso:2000V
IT (RMS) : 16A
VDRM : 600 V
Tj: 150 °C
IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Voltage class
12
600
720
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
160
A
I2t
106.5
A2 s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note6
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 98°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta=25°C, AC 1 minute
T1 • T2 • G terminal to case
Page 1 of 7
BCR16FM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Min.
—
—
Rated value
Typ.
Max.
—
2.0
—
1.5
Unit
Test conditions
mA
V
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30 Note5
30 Note5
30 Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
0.2
0.1
—
—
—
—
—
—
2.9
V
10
1
—
—
—
—
Gate non-trigger voltage
Thermal resistance
Rth (j-c)
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
6.
(dv/dt)c
°C/W
V/μs
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Tj = 150°C
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact themal resistance Rth (c-f) in case of greasing is 0.5°C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
High sensitivity (IGT ≤ 20mA) is also available.(IGT item:1)
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR16FM-12LB
Preliminary
Performance Curves
103
7
5
3
2
102
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
1.0
1.5
2.0
2.5
3.0
3.5
180
160
140
120
100
80
60
40
20
0
100
4.0
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
3
2 VGM = 10V PG(AV) = 0.5W
PGM = 5W
101
7
5
IGM = 2A
3 VGT = 1.5V
2
100
7
5
3
2
IFGT I, IRGT I, IRGT III
VGD = 0.2V
10–1
7
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Surge On-State Current (A)
200
100
0.5
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103 2 3
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR16FM-12LB
Preliminary
40
No Fins
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
On-State Power Dissipation (W)
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
35
30 360° Conduction
Resistive,
25 inductive loads
20
15
10
5
0
5
2
4
6
8 10 12 14 16 18 20
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
140
120
100 Curves apply regardless
of conduction angle
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 2 4 6 8 10 12 14 16 18 20
Ambient Temperature (°C)
160
120
100
80
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
Conduction Time (Cycles at 60Hz)
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
Page 4 of 7
BCR16FM-12LB
Preliminary
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
102
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
3
2
I Quadrant
100
7
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR16FM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
102
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
3
2
100
7
Minimum
Characteristics
Value
3
5 7 101
2 3
5 7 102
2 3
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
330Ω
V
Test Procedure I
R1
A
6V
V
Test Procedure II
330Ω
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R0 = 100Ω
R1 = 47 to 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Page 6 of 7
BCR16FM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
Packing
Quantity
BCR16FM-12LB#BB0
Tube
50 pcs.
BCR16FM-12LB-1#BB0
Tube
50 pcs.
BCR16FM-12LB#BB0
Tube
50 pcs.
BCR16FM12LB1#BB0
Tube
50 pcs.
Note : Please confirm the specification about the shipping in detail.
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
Remark
Straight type
Straight type, IGT item:1
 :Lead forming type
: Lead forming type, IGT item:1
Page 7 of 7
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Ku, Seoul, 135-920, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2014 Renesas Electronics Corporation. All rights reserved.
Colophon 4.0
Similar pages