TOSHIBA 30QWK2CZ47_06

30QWK2CZ47
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30QWK2CZ47
Switching Type Power Supply Application
Converter & Chopper Application
•
Repetitive peak reverse voltage: VRRM = 120 V
•
Peak Forward Voltage: VFM = 0.85 V (max)
•
Average output recified current: IO = 30 A
•
Low switching losses and output noise
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
120
V
Average output recified current
IO
30
A
IFSM
250 (50 Hz)
A
Tj
−40~150
°C
JEDEC
―
Tstg
−40~150
°C
JEITA
―
⎯
0.6
N・m
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
Screw Torque
TOSHIBA
12-10C1A
Weight: 2.0 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 15 A
⎯
⎯
0.85
V
Repetitive peak reverse current
IRRM
VRRM = Rated (120 V)
⎯
⎯
50
μA
Cj
VR = 10 V, f = 1.0 MHz
⎯
227
⎯
pF
Total DC, Junction to case
⎯
⎯
2.5
°C/W
Junction capacitance
Thermal resistance
Rth (j-c)
Note: VFM, IRRM, Cj: A value applied to one cell.
Polarity
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30QWK2CZ47
Marking
30QWK2CZ
Characteristics
indicator
Abbreviation Code
Part No.
30QWK2CZ
30QWK2CZ47
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM:
Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IO:
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IO and Tj be below 120°C. When using this device, take the margin into consideration by using an
allowable Tamax-IO curve.
IFSM:
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj:
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 120°C.
Please refer to the Rectifiers databook for further information.
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iF – vF
PF (AV) – Io
100
32
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current
iF (A)
One cell
Tj = 150°C
10
100°C
75°C
25°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Instantaneous forward voltage vF
8
0° α 360°
4
IFSM (A)
α = 30°
Surge forward current
Average forward power dissipation
Tc max (°C)
120
60°
90°
120°
180°
40
0° α 360°
0
0
Conduction
angle α
4
8
12
16
20
4
8
12
16
20
24
28
24
Average output rectified current
28
Io
32
36
Io (A)
Ta = 25°C
Single phase full
Sine wave
f = 50 Hz
240
One cell
200
160
120
80
40
0
1
36
3
(A)
5
10
30
50
100
Number of cycles
rth (j-c) – t
Cj – VR
(typical)
1000
10
One cell
f = 1 MHz
500
Ta = 25°C
(pF)
5
One cell
300
Cj
3
Junction capacitance
Transient thermal impedance
rth (j-c) (°C/W)
32
Surge forward current (non-repetitive)
280
20
Conduction
angle α
Average output rectified current
(V)
140
60
Rectangular
waveform
(one cell)
α = 30°
12
320
Rectangular
waveform
(one cell)
60°
16
Tc max – Io
80
90°
20
160
100
120°
24
0
0
1.4
180°
28
1
0.5
0.3
0.1
0.001
0.01
0.1
1
10
100
50
30
10
1
100
Time t (s)
3
5
10
Reverse voltage
3
30
50
100
VR (V)
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30QWK2CZ47
IR – Tj
PR (AV) – VR
(typical)
Reverse current IR
(mA)
(one cell)
100
120
10
50
30
1
VR = 10 V
0.1
0.01
20
40
60
80
100
120
140
Average reverse power dissipation
PR (AV) (W)
Pulse measurement
0.001
0
(typical)
3.2
100
2.8
0°
360°
2.4
DC
VR
2.0
1.6
Conduction
angle α
Tj = 150°C
0.8
300°
240°
1.2
180°
120°
60°
0.4
0
0
160
Rectangular
waveform
20
40
60
Reverse voltage
Junction temperature Tj (°C)
4
80
VR
100
120
(V)
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RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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