TI CSD17311Q5 30v n-channel nexfetâ ¢ power mosfet Datasheet

CSD17311Q5
www.ti.com
SLPS257 – MARCH 2010
30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17311Q5
PRODUCT SUMMARY
FEATURES
1
•
•
•
•
•
•
•
•
2
Optimized for 5V Gate Drive
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
VDS
Drain to Source Voltage
30
V
Qg
Gate Charge Total (4.5V)
24
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
VGS(th)
nC
2.3
mΩ
VGS = 4.5V
1.8
mΩ
VGS = 8V
1.6
mΩ
Threshold Voltage
1.2
V
ORDERING INFORMATION
Device
Package
Media
CSD17311Q5
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
APPLICATIONS
•
•
5.2
VGS = 3V
Notebook Point-of-Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Qty
Ship
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
TA = 25°C unless otherwise stated
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Top View
S
1
8
D
S
2
7
D
S
3
G
4
6
D
UNIT
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
100
A
Continuous Drain Current(1)
32
A
IDM
Pulsed Drain Current, TA = 25°C(2)
200
A
PD
Power Dissipation(1)
3.2
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, Single Pulse
ID = 113A, L = 0.1mH, RG = 25Ω
638
mJ
ID
(1) Typical RqJA = 40°C/W when mounted on a 1-inch2
(6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch
(1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing
Text_added_for_spacing_Text_added_for_spacing
D
5
VALUE
VDS
D
P0094-01
RDS(on) vs VGS
GATE CHARGE
8
ID = 30A
VGS - Gate-to-Source Voltage - V
RDS(on) - On-State Resistance - mΩ
6
5
4
T C = 125°C
3
2
T C = 25°C
1
ID = 30A
VDS = 15V
7
6
5
4
3
2
1
0
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
0
5
10
15
20
25
Qg - Gate Charge - nC
30
35
40
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CSD17311Q5
SLPS257 – MARCH 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 24V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/–8V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
30
0.9
V
1
mA
100
nA
1.2
1.6
V
VGS = 3V, ID = 30A
2.3
3.1
mΩ
VGS = 4.5V, ID = 30A
1.8
2.3
mΩ
VGS = 8V, ID = 30A
1.6
2
mΩ
VDS = 15V, ID = 30A
200
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
85
110
pF
RG
Series Gate Resistance
1.2
2.4
Ω
Qg
Gate Charge Total (4.5V)
24
31
nC
Qgd
Gate Charge Gate to Drain
5.2
nC
Qgs
Gate Charge Gate to Source
6.6
nC
Qg(th)
Gate Charge at Vth
3.9
nC
Qoss
Output Charge
47
nC
td(on)
Turn On Delay Time
12
ns
tr
Rise Time
18
ns
td(off)
Turn Off Delay Time
33
ns
tf
Fall Time
12
ns
VGS = 0V, VDS = 15V,
f = 1MHz
VDS = 15V,
IDS = 30A
VDS = 14.8V, VGS = 0V
VDS = 15V, VGS = 4.5V,
IDS = 30A, RG = 2Ω
3290 4280
pF
1740 2260
pF
Diode Characteristics
VSD
Diode Forward Voltage
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
ISD = 30A, VGS = 0V
0.85
VDD = 14.8V, IF = 30A,
di/dt = 300A/ms
1
V
74
nC
39
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
RqJC
Thermal Resistance Junction to Case (1)
RqJA
Thermal Resistance Junction to Ambient (1) (2)
(1)
(2)
2
2
MIN
TYP
MAX
UNIT
1
°C/W
49
°C/W
2
RqJC is determined with the device mounted on a 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
CSD17311Q5
www.ti.com
SLPS257 – MARCH 2010
GATE
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RqJA = 49°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Source
Max RqJA = 120°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
Text
Text
Text
and
and
and
br
br
br
Added
Added
Added
for
for
for
Spacing
Spacing
Spacing
TYPICAL MOSFET CHARACTERISTICS
TA = 25°C, unless otherwise specified
ZqJA - Normalized Thermal Impedance
10
1
0.5
0.3
0.1
Duty Cycle = t1/t2
0.1
0.05
P
0.02
0.01
t1
0.01
t2
Typical RqJA = 96°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
tp - Pulse Duration - s
10
100
1k
G012
Figure 1. Transient Thermal Impedance
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
3
CSD17311Q5
SLPS257 – MARCH 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless otherwise specified
TEXT ADDED FOR SPACING
100
90
90
80
IDS - Drain-to-Source Current - A
IDS - Drain-to-Source Current - A
TEXT ADDED FOR SPACING
100
VGS = 8V
70
VGS = 4.5V
60
VGS = 3.5V
50
40
VGS = 3V
30
VGS = 2.5V
20
10
VDS = 5V
80
70
60
T C = 125°C
50
40
T C = 25°C
30
T C = -55°C
20
10
0
0
0
0.2
0.4
0.6
0.8
VDS - Drain-to-Source Voltage - V
1
1
1.2
1.4
G001
Figure 2. Saturation Characteristics
TEXT ADDED FOR SPACING
G002
TEXT ADDED FOR SPACING
ID = 30A
VDS = 15V
7
f = 1MHz
VGS = 0V
8
7
6
C - Capacitance - nF
VGS - Gate-to-Source Voltage - V
3
9
5
4
3
2
6
Coss = Cds + Cgd
5
Ciss = Cgd + Cgs
4
3
2
1
Crss = Cgd
1
0
0
0
5
10
15
20
25
Qg - Gate Charge - nC
30
35
40
0
5
10
15
20
VDS - Drain-to-Source Voltage - V
G003
Figure 4. Gate Charge
25
30
G004
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
6
1.6
RDS(on) - On-State Resistance - mΩ
ID = 250µA
1.4
VGS(th) - Threshold Voltage - V
2.8
Figure 3. Transfer Characteristics
8
1.2
1
0.8
0.6
0.4
0.2
0
-75
ID = 30A
5
4
T C = 125°C
3
2
T C = 25°C
1
0
-25
25
75
T C - Case Temperature - °C
125
175
0
1
G005
Figure 6. Threshold Voltage vs. Temperature
4
1.6 1.8
2
2.2 2.4 2.6
VGS - Gate-to-Source Voltage - V
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
CSD17311Q5
www.ti.com
SLPS257 – MARCH 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless otherwise specified
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
1.6
100
ID = 30A
VGS = 8V
ISD - Source-to-Drain Current - A
Normalized On-State Resistance
1.8
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-75
10
1
T C = 125°C
0.1
T C = 25°C
0.01
0.001
0.0001
-25
25
75
T C - Case Temperature - °C
125
175
0
0.2
G007
Figure 8. Normalized On-State Resistance vs. Temperature
1
G008
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
1k
I(AV) - Peak Avalanche Current - A
1k
IDS - Drain-to-Source Current - A
0.4
0.6
0.8
VSD - Source-to-Drain Voltage - V
100
1ms
10
10ms
11110
100ms
1
Area Limited
by RDS(on)
0.1
1s
Single Pulse
Typical R θJA = 96°C/W (min Cu)
0.01
0.01
DC
0.1
1
10
VDS - Drain-to-Source Voltage - V
100
100
T C = 25°C
T C = 125°C
10
1
0.01
G009
Figure 10. Maximum Safe Operating Area
0.1
1
10
t(AV) - Time in Avalanche - ms
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
IDS - Drain-to-Source Current - A
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100 125
T C - Case Temperature - °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
5
CSD17311Q5
SLPS257 – MARCH 2010
www.ti.com
MECHANICAL DATA
Q5 Package Dimensions
K
L
L
c1
E1
E2
b
D2
4
4
5
5
e
3
6
3
6
E
D1
7
7
2
2
8
8
1
1
q
Top View
Bottom View
Side View
c
E1
A
q
Front View
M0140-01
DIM
MILLIMETERS
MAX
MIN
MAX
A
0.950
1.050
0.037
0.039
b
0.360
0.460
0.014
0.018
c
0.150
0.250
0.006
0.010
c1
0.150
0.250
0.006
0.010
D1
4.900
5.100
0.193
0.201
D2
4.320
4.520
0.170
0.178
E
4.900
5.100
0.193
0.201
E1
5.900
6.100
0.232
0.240
E2
3.920
4.12
0.154
e
6
INCHES
MIN
1.27 TYP
K
0.760
L
0.510
q
0.00
0.162
0.050
0.030
0.710
Submit Documentation Feedback
0.020
0.028
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
CSD17311Q5
www.ti.com
SLPS257 – MARCH 2010
Recommended PCB Pattern
F1
F7
DIM
F3
8
1
F2
F11
F5
F9
5
4
F6
F8
F4
F10
M0139-01
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.460
4.560
0.176
0.180
F3
4.460
4.560
0.176
0.180
F4
0.650
0.700
0.026
0.028
F5
0.620
0.670
0.024
0.026
F6
0.630
0.680
0.025
0.027
F7
0.700
0.800
0.028
0.031
F8
0.650
0.700
0.026
0.028
F9
0.620
0.670
0.024
0.026
F10
4.900
5.000
0.193
0.197
F11
4.460
4.560
0.176
0.180
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
Text added for spacing
Text added for spacing
Q5 Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and convection) PbF reflow compatible
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
7
CSD17311Q5
SLPS257 – MARCH 2010
www.ti.com
Package Marking Information
Location
8
1st Line
CSD
= Fixed Characters
NNNNN
= Product Code
2nd Line (Date Code)
YY
= Last 2 digits of the Year
WW
= 2-digit Work Week
C
= Country of Origin
5
5
8
4
1
CSDNNNNN
YYWWC
LLLLL
> Philippines = P
> Taiwan = T
> China = C
3rd Line
LLLL
= Last 5 digits of the Wafer Lot #
1
4
Pin 1
Identifier
M0141-01
8
Submit Documentation Feedback
Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): CSD17311Q5
PACKAGE OPTION ADDENDUM
www.ti.com
2-Jul-2010
PACKAGING INFORMATION
Orderable Device
CSD17311Q5
Status
(1)
ACTIVE
Package Type Package
Drawing
SON
DQH
Pins
Package Qty
8
2500
Eco Plan
(2)
Pb-Free (RoHS
Exempt)
Lead/
Ball Finish
Call TI
MSL Peak Temp
(3)
Samples
(Requires Login)
Level-1-260C-UNLIM
Purchase Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,
and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are
sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard
warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using TI components. To minimize the risks associated with customer products and applications, customers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,
or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a
warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual
property of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive
business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all
express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not
responsible or liable for any such statements.
TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably
be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing
such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products
and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be
provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in
such safety-critical applications.
TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are
specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, TI will not be responsible for any failure to meet such requirements.
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Applications
Amplifiers
amplifier.ti.com
Audio
www.ti.com/audio
Data Converters
dataconverter.ti.com
Automotive
www.ti.com/automotive
DLP® Products
www.dlp.com
Communications and
Telecom
www.ti.com/communications
DSP
dsp.ti.com
Computers and
Peripherals
www.ti.com/computers
Clocks and Timers
www.ti.com/clocks
Consumer Electronics
www.ti.com/consumer-apps
Interface
interface.ti.com
Energy
www.ti.com/energy
Logic
logic.ti.com
Industrial
www.ti.com/industrial
Power Mgmt
power.ti.com
Medical
www.ti.com/medical
Microcontrollers
microcontroller.ti.com
Security
www.ti.com/security
RFID
www.ti-rfid.com
Space, Avionics &
Defense
www.ti.com/space-avionics-defense
RF/IF and ZigBee® Solutions www.ti.com/lprf
Video and Imaging
www.ti.com/video
Wireless
www.ti.com/wireless-apps
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2010, Texas Instruments Incorporated
Similar pages