Diodes DMN32D2LV-7 Dual n-channel enhancement mode field effect transistor Datasheet

DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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•
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Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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SOT-563
ESD PROTECTED
Maximum Ratings
G1
S1
S2
G2
D1
TOP VIEW
Schematic and Transistor Diagram
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
ID
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Thermal Characteristics
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
PD
RθJA
TJ, TSTG
Unit
V
V
mA
400
313
-55 to +150
mW
°C/W
°C
@TA = 25°C unless otherwise specified
@ TC = 25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
30
⎯
⎯
⎯
IGSS
⎯
⎯
⎯
1
±10
±500
V
μA
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VGS(th)
0.6
|Yfs|
VSD
⎯
⎯
⎯
100
0.5
⎯
⎯
⎯
⎯
⎯
⎯
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 20mA
VGS = 2.5V, ID = 20mA
VGS = 4.0V, ID = 100mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
ton
toff
⎯
⎯
⎯
⎯
⎯
39
10
3.6
11
51
RDS (ON)
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Value
30
±10
400
@TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
D2
Turn-on Time
Turn-off Time
1.2
V
2.2
1.5
1.2
Ω
⎯
1.4
mS
V
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nS
nS
Test Condition
VDS = 3V, VGS = 0V
f = 1.0MHz
VDD = 5V, ID = 10 mA,
VGS = 5V
1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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DMN32D2LV
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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DMN32D2LV
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.8
1.6
VGS = 4V
ID = 100mA
1.4
VGS = 2.5V
ID = 20mA
VGS = 1.8V
ID = 20mA
1.2
1.0
0.8
0.6
-75
-50 -25
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (C°)
Fig. 7 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
50
f = 1 MHz
40
CT, CAPACITANCE (pF)
Ciss
30
20
10
Coss
Crss
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Capacitance
20
Ordering Information (Note 5)
Part Number
DMN32D2LV-7
Notes:
Case
SOT-563
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information (Note 6)
D2
G1
S1
DV = Product Type Marking Code (See Note 6)
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
DV YM
S2
Notes:
G2
D1
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
2008
V
Feb
2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
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Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
April 2010
© Diodes Incorporated
DMN32D2LV
Package Outline Dimensions
A
B
SOT-563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
C
D
G
M
K
H
L
Suggested Pad Layout
C2
Z
C2
C1
G
Y
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
X
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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DMN32D2LV
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Copyright © 2010, Diodes Incorporated
www.diodes.com
DMN32D2LV
Document number: DS31121 Rev. 6 - 2
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