Dynex DG406BP25 Gate turn-off thyristor Datasheet

DG406BP25
DG406BP25
Gate Turn-off Thyristor
Replaces version, DS4090-3.0
DS4090-4.0 November 2005 (LN24306)
APPLICATIONS
KEY PARAMETERS
ITCM
1200A
VDRM
2500V
IT(AV)
500A
dVD/dt
1000V/µs
300A/µs
diT/dt
■ Variable speed A.C. motor drive inverters (VSD-AC).
■ Uninterruptable Power Supplies
■ High Voltage Converters.
■ Choppers.
■ Welding.
■ Induction Heating.
■ DC/DC Converters.
FEATURES
■ Double Side Cooling.
■ High Reliability In Service.
■ High Voltage Capability.
■ Fault Protection Without Fuses.
■ High Surge Current Capability.
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
Outline type code: P.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG406BP25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
1200
A
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.5µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
500
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
630
A
1/19
DG406BP25
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
8.0
kA
I2t
I2t for fusing
10ms half sine. Tj =125oC
0.32 x 106
A2s
Critical rate of rise of on-state current
VD = 2000V, IT = 1000A, Tj = 125oC, IFG ≥ 30A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
500
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
IT = 1000A, VD = VDRM, Tj = 125oC,
diGQ/dt = 30A/µs, Cs = 1.0µF
200
nH
diT/dt
dVD/dt
LS
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
20
70
A
PFG(AV)
Average forward gate power
-
10
W
PRGM
Peak reverse gate power
-
15
kW
diGQ/dt
Rate of rise of reverse gate current
15
60
A/µs
tON(min)
Minimum permissable on time
20
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.041
o
Anode side cooled
-
0.07
o
Cathode side cooled
-
0.1
o
-
0.009
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
11.0
15.0
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
2/19
Conditions
Clamping force 12.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
kN
DG406BP25
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 1000A peak, IG(ON) = 4A d.c.
-
2.5
V
IDM
Peak off-state current
VDRM = 2500V, VRG = 0V
-
50
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
1.5
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 2000V
-
1040
mJ
td
Delay time
IT = 1000A, dIT/dt = 300A/µs
-
1.5
µs
tr
Rise time
IFG = 30A, rise time ≤ 1.0µs
-
3.0
µs
Turn-off energy
-
2300
mJ
tgs
Storage time
-
14.0
µs
tgf
Fall time
IT = 1000A, VDM = 2500V
-
1.5
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 1.0µF,
-
15.5
µs
QGQ
Turn-off gate charge
diGQ/dt = 30A/µs
-
3000
µC
QGQT
Total turn-off gate charge
-
6000
µC
IGQM
Peak reverse gate current
-
420
A
EOFF
3/19
DG406BP25
2.0
4.0
1.5
3.0
1.0
2.0
VGT
0.5
1.0
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
IGT
0
-50
-25
0
25
50
75 100
Junction temperature Tj - (˚C)
125
0
150
Instantaneous on-state current ITM - (kA)
4.0
Measured under pulse conditions.
IG(ON) = 4.0A
Half sine wave 10ms
3.0
1.5
Tj = 25˚C
Tj = 125˚C
1.0
2.0
0.5
1.0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
4/19
Maximum permissible turn-off current ITCM - (kA)
Fig.1 Maximum gate trigger voltage/current vs junction temperature
5.0
Conditions:
Tj = 125˚C, VDM = VDRM,
dIGQ/dt = 30A/µs
0
0.25 0.50 0.75 1.00 1.25 1.5 1.75
Snubber capacitance CS - (µF)
Fig.3 Maximum dependence of ITCM on CS
2.0
DG406BP25
0.05
dc
0.03
0.02
0.01
0
0.001
0.01
0.1
Time - (s)
100
10
1.0
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
Thermal impedance - ˚C/W
0.04
20
15
10
5
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
Mean on-state power dissipation - (W)
DG406BP25
1500
Conditions:
IG(ON) = 4.0A
dc
180˚
1000
120˚
60˚
30˚
500
0
0
200
400
600
Mean on-state current IT(AV) - (A)
70
80
90 100 120
Maximum permissible case
temperature - (˚C)
130
Mean on-state power dissipation - (W)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
1500
Conditions:
IG(ON) = 4.0A
1000
180˚
120˚
90˚
60˚
30˚
500
0
0
100 200 300 400 500 600
Mean on-state current IT(AV) - (A)
70
80
90 100 120 130
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
DG406BP25
Conditions:
Tj = 25˚C, IFGM = 30A,
CS = 1.0µF,
dI/dt = 300A/µs,
750 dIFG/dt = 30A/µs
VD = 2000V
VD = 1500V
500
VD = 1000V
250
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Fig.8 Turn-on energy vs on-state current
2000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
1000
Conditions:
Tj = 25˚C, IT = 1000A,
CS = 1.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
1000
VD = 2000V
VD = 1500V
500
0
VD = 1000V
0
20
40
60
80
Peak forward gate current IFGM - (A)
FIG 9 TURN ON ENERGY
PEAK FORWARD
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG406BP25
Turn-on energy loss EON - (mJ)
1125
Conditions:
1000 Tj = 125˚C, IFGM = 30A,
CS = 1.0µF,
RS = 10 Ohms,
875 dI /dt = 300A/µs,
T
dIF/dt = 30A/µs
750
VD = 2000V
VD = 1500V
625
VD = 1000V
500
375
250
125
0
0
250
500
750
1000
On-state current IT - (A)
1250
2500
Fig.10 Turn-on energy vs on-state current
1250
Conditions:
Tj = 125˚C, IT = 1000A,
CS = 1.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
VD = 2000V
1000
VD = 1500V
VD = 1000V
500
0
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
2000
Conditions:
IT = 1000A,
Tj = 125˚C,
CS = 1.0µF
1000 RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
750
VD = 2000V
500
VD = 1500V
250
VD = 1000V
80
0
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
FIG 12 TURN ON ENERGY
RATE OF
Fig.12 Turn-on energy vs rate of rise of on-state current
DG406BP25
Conditions: Tj = 125˚C, IFGM = 30A,
CS = 1.0µF, VD = 2000V,
RS = 10 Ohms, dIT/dt = 300A/µs
tr
3.0
2.0
td
1.0
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Fig.13 Delay time & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (µs)
Turn-on delay and rise time - (µs)
4.0
Conditions:
Tj = 125˚C, IT = 1000A,
CS = 1.0µF,
RS = 10 Ohms,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 2000V
4.0
3.0
tr
2.0
td
1.0
0
0
20
40
60
80
Peak forward gate current IFGM - (A)
FIG
14
DELAY
TIME & RISE TIME
PEAK FORWARD
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG406BP25
Turn-off energy loss EOFF - (mJ)
2000
Conditions:
Tj = 25˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
1500
VDRM
0.75x VDRM
1000
0.5x VDRM
500
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Turn-off energy per pulse EOFF - (mJ)
Fig.15 Turn-off energy vs on-state current
2000
Conditions:
Tj = 25˚C,
CS = 1.0µF,
IT = 1000A
VDRM
1500
0.75x VDRM
1000
0.5x VDRM
500
0
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 16 TURN OFF ENERGY
RATE OF RISE OF
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
60
DG406BP25
2500
Conditions:
Tj = 125˚C,
CS = 1.0µF,
dIGQ/dt = 30A/µs
VDRM
1500
0.75x VDRM
1000
0.5x VDRM
500
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 17 TURN OFF ENERGY
ON STATE CURRENT
1500
Fig.17 Turn-off energy vs on-state current
2500
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
2000
Conditions:
2000 Tj = 125˚C,
CS = 1.0µF,
IT = 1000A
VDRM
0.75x VDRM
1500
0.5x VDRM
1000
500
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 18 TURN OFF ENERGY LOSS
RATE OF RISE OF
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG406BP25
2500
Turn-off energy per pulse EOFF - (mJ)
Conditions:
Tj = 125˚C,
VDM = VDRM,
dIGQ/dt = 30A/µs
CS = 1.0µF
CS = 1.5µF
2000
CS = 2.0µF
1500
CS = 0.5µF
1000
500
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 19 TURN OFF ENERGY
ON STATE CURRENT
1500
Fig.19 Turn-off energy vs on-state current
2.0
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
Gate fall tgf - (µs)
1.5
Tj = 25˚C
1.0
0.5
0
0
250
500
750
1000
On-state current IT - (A)
Fig.20 Gate fall time vs on-state current
12/19
1250
1500
DG406BP25
Gate storage time tgs - (µs)
25
Conditions:
CS = 1.0µF,
IT = 1000A
20
15
Tj = 125˚C
10
Tj = 25˚C
5
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 21 GATE STORAGE TIME
RATE OF RISE OF
60
Fig.21 Gate storage time vs rate of rise of reverse gate current
Gate storage fall tgf - (µs)
2.0
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
1.5
Tj = 25˚C
1.0
0.5
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 22 GATE FALL TIME
ON STATE CURRENT
1500
Fig.22 Gate fall time vs on-state current
13/19
DG406BP25
2.00
Conditions:
CS = 1.0µF,
IT = 1000A
Gate fall time tgf - (µs)
1.75
1.50
Tj = 125˚C
1.25
Tj = 25˚C
1.00
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FIG 23 GATE FALL TIME
RATE OF RISE OF
60
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
500
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
400
Tj = 25˚C
300
200
100
0
250
500
750
1000
Turn-off current IT - (A)
1250
Fig.24 Peak reverse gate current vs turn-off current
14/19
1500
DG406BP25
500
Conditions:
CS = 1.0µF,
IT = 1000A
Tj = 125˚C
Peak reverse gate current IGQM - (A)
450
Tj = 25˚C
400
350
300
250
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
60
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Total turn-off charge QGQ - (µC)
4000
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
Tj = 125˚C
3000
Tj = 25˚C
2000
1000
0
0
250
500
750
1000
On-state current IT - (A)
1250
1500
Fig.26 Turn-off gate charge vs on-state current
15/19
DG406BP25
4000
Conditions:
CS = 1.0µF,
IT = 1000A
Turn-off gate charge QGQ - (µC)
3500
3000
Tj = 125˚C
2500
2000
Tj = 25˚C
1500
10
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
60
Rate of rise of off-state voltage dV/dt
- (V/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
VD = 1250V
500
0
0.1
Tj = 125˚C
VD = 1650V
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG406BP25
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 1000A
IFG = 30A
IG(ON) = 4A d.c.
tw1(min) = 10µs
IGQM = 420A
diGQ/dt = 30A/µs
QGQ = 3000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG406BP25
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep
Auxiliary cathode
20˚
Gate
Cathode
18 nom
27.0
25.5
Ø51 nom
Ø38 nom
Ø38 nom
Ø56 max
Ø57.5 max
Ø63.5 max
Nominal weight: 350g
Clamping force: 12kN ±10%
Lead length: 505mm
Package outine type code: P
18/19
Anode
http://www.dynexsemi.com
e-mail: [email protected]
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Lincolnshire. LN6 3LF. United Kingdom.
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