Seme LAB BUL54A-TO5 Silicon power npn transistor Datasheet

SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
•
Advanced Distributed Base design
•
High Voltage
•
Fast Switching
•
High Energy Rating
•
Screening Options Available
Features:
•
•
•
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and
energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PTOT
TJ
Tstg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (Ic = 0)
Continuous Collector Current
Tc = 25°C
Total Power Dissipation at
Operating Junction Temperature Range
Storage Temperature Range
1000V
500V
10V
4A
20W
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Max
Units
RθJC
Thermal Resistance, Junction To Case
6.25
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 5977
Issue 2
Page 1 of 3
SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
ICBO
Collector-Base Cut-Off Current
ICEO
Collector-Emitter Cut- off current
IEBO
Emitter-Base Cut-Off Current
(1)
Test Conditions
Min
VCB = 1000V
IB = 0
TC = 125°C
100
VCE = 500V
100
VEB = 9V
IC = 0
TC = 125°C
500
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA
1000
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA
10
VBE(sat)
hFE
(1)
(1)
Base-Emitter Saturation Voltage
Forward-current transfer ratio
µA
100
IC = 10mA
Collector-Emitter Saturation Voltage
Units
10
Collector-Emitter Breakdown Voltage
VCE(sat)
Max
10
V(BR)CEO
(1)
Typ
IC = 100mA
IB =20mA
0.05
0.1
IC = 0.5A
IB =0.1A
0.15
0.2
IC = 1.0A
IB = 0.2A
0.3
0.5
IC = 0.5A
IB = 0.1A
0.8
1.0
IC = 1.0A
IB = 0.2A
0.9
1.1
IC = 0.1A
VCE = 5V
20
50
IC = 0.5A
VCE = 5V
12
15
IC = 1.0A
VCE = 1.0V
5
8
TC = 125°C
5
V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 0.2A
VCE = 4V
20
MHz
Cobo
Output Capacitance
VCB = 20V
f = 1.0MHz
20
pF
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 5977
Issue 2
Page 2 of 3
SILICON POWER
NPN TRANSISTOR
BUL54A-TO5
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
38.00
(1.5)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO-5 (TO-205AA)
Pin 1 - Emitter
Pin 2 - Base
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Pin 3 - Collector
Website: http://www.semelab-tt.com
Document Number 5977
Issue 2
Page 3 of 3
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